Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
UPA2719GR-E2-A

UPA2719GR-E2-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2790GR-E2-A

UPA2790GR-E2-A

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SJ325-AZ

2SJ325-AZ

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
2,478 -

RFQ

2SJ325-AZ

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
RJK0381DPA-WS#J53

RJK0381DPA-WS#J53

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,110 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0381DPA-00#J5A

RJK0381DPA-00#J5A

MOSFET N-CH 30V 40A 8WPAK

Renesas Electronics America Inc
2,000 -

RFQ

RJK0381DPA-00#J5A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Ta) - 4.5mOhm @ 20A, 10V - 15 nC @ 4.5 V - 2200 pF @ 10 V - 45W (Tc) 150°C (TJ) Surface Mount
2SJ325-Z-E1-AY

2SJ325-Z-E1-AY

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
1,829 -

RFQ

2SJ325-Z-E1-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RF1S45N06LESM9A

RF1S45N06LESM9A

N-CHANNEL POWER MOSFET

Harris Corporation
1,600 -

RFQ

RF1S45N06LESM9A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF231

IRF231

N-CHANNEL POWER MOSFET

Harris Corporation
1,234 -

RFQ

IRF231

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 9A (Tc) 10V 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTB3N60ET4

MTB3N60ET4

N-CHANNEL POWER MOSFET

onsemi
700 -

RFQ

MTB3N60ET4

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF9543

IRF9543

P-CHANNEL POWER MOSFET

Harris Corporation
430 -

RFQ

IRF9543

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 15A (Tc) 10V 300mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SJ325-AY

2SJ325-AY

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
425 -

RFQ

2SJ325-AY

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
2SJ325-Z-AY

2SJ325-Z-AY

P-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics America Inc
381 -

RFQ

2SJ325-Z-AY

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
HUFA75545P3

HUFA75545P3

MOSFET N-CH 80V 75A TO220-3

Fairchild Semiconductor
345 -

RFQ

HUFA75545P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 10mOhm @ 75A, 10V 4V @ 250µA 235 nC @ 20 V ±20V 3750 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N04S3-03

IPP80N04S3-03

N-CHANNEL POWER MOSFET

Infineon Technologies
345 -

RFQ

IPP80N04S3-03

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI50R299CP

IPI50R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
9,978 -

RFQ

IPI50R299CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQP5N80

FQP5N80

MOSFET N-CH 800V 4.8A TO220-3

Fairchild Semiconductor
8,692 -

RFQ

FQP5N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.8A (Tc) 10V 2.6Ohm @ 2.4A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1250 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9520

IRF9520

MOSFET P-CH 100V 6A TO220AB

Harris Corporation
8,668 -

RFQ

IRF9520

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) - 600mOhm @ 3.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD3580

FDD3580

MOSFET N-CH 80V 7.7A DPAK

Fairchild Semiconductor
8,500 -

RFQ

FDD3580

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 7.7A (Ta) 6V, 10V 29mOhm @ 7.7A, 10V 4V @ 250µA 49 nC @ 10 V ±20V 1760 pF @ 40 V - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB65N06TM

FQB65N06TM

MOSFET N-CH 60V 65A D2PAK

Fairchild Semiconductor
6,179 -

RFQ

FQB65N06TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 16mOhm @ 32.5A, 10V 4V @ 250µA 65 nC @ 10 V ±25V 2410 pF @ 25 V - 3.75W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75329D3S

HUF75329D3S

MOSFET N-CH 55V 20A TO252AA

Fairchild Semiconductor
4,250 -

RFQ

HUF75329D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 26mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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