Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF75925P3

HUF75925P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,400 -

RFQ

HUF75925P3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 275mOhm @ 11A, 10V 4V @ 250µA 78 nC @ 20 V ±20V 1030 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD2612

FDD2612

MOSFET N-CH 200V 4.9A TO252

Fairchild Semiconductor
2,261 -

RFQ

FDD2612

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4.9A (Ta) 10V 720mOhm @ 1.5A, 10V 4.5V @ 250µA 11 nC @ 10 V ±20V 234 pF @ 100 V - 42W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FQPF28N15

FQPF28N15

MOSFET N-CH 150V 16.7A TO220F

Fairchild Semiconductor
1,904 -

RFQ

FQPF28N15

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 16.7A (Tc) 10V 90mOhm @ 8.35A, 10V 4V @ 250µA 52 nC @ 10 V ±25V 1600 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
MTB15N06V

MTB15N06V

N-CHANNEL POWER MOSFET

onsemi
1,853 -

RFQ

MTB15N06V

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK0349DPA-WS#J0

RJK0349DPA-WS#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,180 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RLD03N06CLESM

RLD03N06CLESM

N-CHANNEL POWER MOSFET

Harris Corporation
1,025 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQAF44N08

FQAF44N08

MOSFET N-CH 80V 35.6A TO3PF

Fairchild Semiconductor
720 -

RFQ

FQAF44N08

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 35.6A (Tc) 10V 34mOhm @ 17.8A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1430 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS3682_NL

FDS3682_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
704 -

RFQ

FDS3682_NL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 6A (Ta) 6V, 10V 35mOhm @ 6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 1300 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQAF19N20

FQAF19N20

MOSFET N-CH 200V 15A TO3PF

Fairchild Semiconductor
684 -

RFQ

FQAF19N20

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 15A (Tc) 10V 150mOhm @ 7.5A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF5N80

FQPF5N80

MOSFET N-CH 800V 2.8A TO220F

Fairchild Semiconductor
610 -

RFQ

FQPF5N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.8A (Tc) 10V 2.6Ohm @ 1.4A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1250 pF @ 25 V - 47W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD20N03SM9A

RFD20N03SM9A

N-CHANNEL POWER MOSFET

Harris Corporation
4,911 -

RFQ

RFD20N03SM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2SK3484-S16-AY

2SK3484-S16-AY

SMALL SIGNAL MOSFET

Renesas Electronics America Inc
3,395 -

RFQ

2SK3484-S16-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA1810GR-9JG-E2-A

UPA1810GR-9JG-E2-A

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

UPA1810GR-9JG-E2-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRLZ24NS

AUIRLZ24NS

AUTOMOTIVE HEXFET POWER MOSFET

International Rectifier
2,902 -

RFQ

AUIRLZ24NS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUZ111SLE3045A

BUZ111SLE3045A

MOSFET N-CH 50V 80A TO263

Siemens
2,000 -

RFQ

BUZ111SLE3045A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 80A - - - - - - - 300W 175°C Surface Mount
IRL510PBF-BE3

IRL510PBF-BE3

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix
398 -

RFQ

IRL510PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) - 540mOhm @ 3.4A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
PJMB390N65EC_R2_00601

PJMB390N65EC_R2_00601

650V/ 390MOHM / 10A/ EASY TO DRI

Panjit International Inc.
800 -

RFQ

PJMB390N65EC_R2_00601

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 390mOhm @ 5A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 726 pF @ 400 V - 87.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUZ111SL-E3045A

BUZ111SL-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
1,830 -

RFQ

BUZ111SL-E3045A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 80A - - - - - - - 300W 175°C Surface Mount
UPA2450TL-E1-A

UPA2450TL-E1-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

UPA2450TL-E1-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2804T1L-E2-AT

UPA2804T1L-E2-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

UPA2804T1L-E2-AT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 3637383940414243...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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