Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR3504TRL

AUIRFR3504TRL

MOSFET N-CH 40V 56A DPAK

International Rectifier
8,645 -

RFQ

AUIRFR3504TRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 56A (Tc) - 9.2mOhm @ 30A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 2150 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK0233DPA-00#J5A

RJK0233DPA-00#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK6E2R0-30C127

BUK6E2R0-30C127

N-CHANNEL POWER MOSFET

NXP USA Inc.
4,728 -

RFQ

BUK6E2R0-30C127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 2.2mOhm @ 25A, 10V 2.8V @ 1mA 229 nC @ 10 V ±16V 14964 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDU6696

FDU6696

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,600 -

RFQ

FDU6696

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 50A (Tc) 4.5V, 10V 8mOhm @ 13A, 10V 3V @ 250µA 24 nC @ 5 V ±16V 1715 pF @ 15 V - 1.6W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75831SK8T

HUF75831SK8T

MOSFET N-CH 150V 3A 8SOIC

Fairchild Semiconductor
1,663 -

RFQ

HUF75831SK8T

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 3A (Ta) 10V 95mOhm @ 3A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 1175 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRL1404PBF-INF

IRL1404PBF-INF

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies
4,574 -

RFQ

IRL1404PBF-INF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) - 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6590 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
UPA2720GR-E1-A

UPA2720GR-E1-A

MOSFET N-CH 30V 14A 8PSOP

Renesas Electronics America Inc
2,500 -

RFQ

UPA2720GR-E1-A

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) - 6.6mOhm @ 7A, 10V 2.5V @ 1mA 27 nC @ 5 V - 2800 pF @ 10 V - - - Surface Mount
RF1S9630

RF1S9630

P-CHANNEL POWER MOSFET

Harris Corporation
2,400 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK973L-E

2SK973L-E

GENERAL SWITCHING POWER MOSFET

Renesas Electronics America Inc
1,709 -

RFQ

Bulk * Obsolete - - - - - - - - - - - - - -
RFP12N18

RFP12N18

N-CHANNEL POWER MOSFET

Harris Corporation
1,550 -

RFQ

RFP12N18

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 180 V 12A (Tc) 10V 250mOhm @ 12A, 10V 4V @ 250µA - ±20V 1700 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD210

IRFD210

0.6A 200V 1.500 OHM N-CHANNEL

Harris Corporation
1,014 -

RFQ

IRFD210

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 600mA (Ta) 10V 1.5Ohm @ 360mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
RJJ0315DSP-WS#J5

RJJ0315DSP-WS#J5

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
885 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HUF76445S3S

HUF76445S3S

MOSFET N-CH 60V 75A D2PAK

Fairchild Semiconductor
513 -

RFQ

HUF76445S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 6.5mOhm @ 75A, 10V 3V @ 250µA 150 nC @ 10 V ±16V 4965 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BST113A

BST113A

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0351DPA-03#J0B

RJK0351DPA-03#J0B

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDB8444TS

FDB8444TS

MOSFET N-CH 40V 20A/70A TO263-5

Fairchild Semiconductor
7,415 -

RFQ

FDB8444TS

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 20A (Ta), 70A (Tc) 10V 5mOhm @ 70A, 10V 4V @ 250µA 338 nC @ 20 V ±20V 8410 pF @ 25 V - 181W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUFA75842P3

HUFA75842P3

MOSFET N-CH 150V 43A TO220-3

Fairchild Semiconductor
6,317 -

RFQ

HUFA75842P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 250µA 175 nC @ 20 V ±20V 2730 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
RJK0366DPA-02#J0B

RJK0366DPA-02#J0B

MOSFET N-CH 30V 25A 8WPAK

Renesas Electronics America Inc
5,000 -

RFQ

RJK0366DPA-02#J0B

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Ta) - 10mOhm @ 12.5A, 10V - 6.8 nC @ 4.5 V - 1010 pF @ 10 V - 30W (Tc) 150°C (TJ) Surface Mount
2SK3305B-S19-AY

2SK3305B-S19-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,000 -

RFQ

2SK3305B-S19-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF75545S3

HUF75545S3

MOSFET N-CH 80V 75A I2PAK

Fairchild Semiconductor
3,713 -

RFQ

HUF75545S3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 10mOhm @ 75A, 10V 4V @ 250µA 235 nC @ 20 V ±20V 3750 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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