Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPB034N06N3G

IPB034N06N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,146 -

RFQ

IPB034N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HRF3205L

HRF3205L

100A 55V 0.008 OHM N-CHANNEL

Harris Corporation
2,210 -

RFQ

HRF3205L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI11N40TU

FQI11N40TU

MOSFET N-CH 400V 11.4A I2PAK

Fairchild Semiconductor
1,875 -

RFQ

FQI11N40TU

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.4A (Tc) 10V 480mOhm @ 5.7A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1400 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4467DY

SI4467DY

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,009 -

RFQ

SI4467DY

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 13.5A (Ta) 1.8V, 4.5V 8.5mOhm @ 13.5A, 4.5V 1.5V @ 250µA 120 nC @ 4.5 V ±8V 8237 pF @ 10 V - 1.2W (Ta) -55°C ~ 175°C (TJ) Surface Mount
IRFBC42

IRFBC42

N-CHANNEL POWER MOSFET

Harris Corporation
1,000 -

RFQ

IRFBC42

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Tc) 10V 1.6Ohm @ 3.4A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP08CNE8NG

IPP08CNE8NG

N-CHANNEL POWER MOSFET

Infineon Technologies
925 -

RFQ

IPP08CNE8NG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 85 V 95A (Tc) 10V 6.4mOhm @ 95A, 10V 4V @ 130µA 99 nC @ 10 V ±20V 6690 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK751R8-40E127

BUK751R8-40E127

N-CHANNEL POWER MOSFET

NXP USA Inc.
784 -

RFQ

BUK751R8-40E127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.8mOhm @ 25A, 10V 4V @ 1mA 145 nC @ 10 V ±20V 11340 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB55N06TM

FQB55N06TM

MOSFET N-CH 60V 55A D2PAK

Fairchild Semiconductor
696 -

RFQ

FQB55N06TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 55A (Tc) 10V 20mOhm @ 27.5A, 10V 4V @ 250µA 46 nC @ 10 V ±25V 1690 pF @ 25 V - 3.75W (Ta), 133W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75339S3ST

HUF75339S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
650 -

RFQ

HUF75339S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP07N600S5

SPP07N600S5

N-CHANNEL POWER MOSFET

Infineon Technologies
400 -

RFQ

SPP07N600S5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK0356DPA-01#J0

RJK0356DPA-01#J0

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
10,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPP070N08N3GXKSA1

IPP070N08N3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
7,700 -

RFQ

IPP070N08N3GXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK6026DPP-B1#T2F

RJK6026DPP-B1#T2F

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2716AGR-E1-AT

UPA2716AGR-E1-AT

MOSFET P-CH 30V 14A 8PSOP

Renesas Electronics America Inc
6,963 -

RFQ

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) - 7mOhm @ 7A, 10V - 95 nC @ 10 V - 3000 pF @ 10 V - 2W (Ta) 150°C (TJ) Surface Mount
FS10ASJ-06F-T13#X3

FS10ASJ-06F-T13#X3

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK4078-ZK-E1-AY

2SK4078-ZK-E1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

2SK4078-ZK-E1-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK0358DPA-00#J0

RJK0358DPA-00#J0

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFM3N45

RFM3N45

N-CHANNEL POWER MOSFET

Harris Corporation
1,840 -

RFQ

RFM3N45

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 3A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 1mA - ±20V 750 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S45N06LE

RF1S45N06LE

45A, 60V, 0.028OHM, N-CHANNEL

Harris Corporation
1,530 -

RFQ

RF1S45N06LE

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 5V 28mOhm @ 45A, 5V 2V @ 250µA 135 nC @ 10 V ±10V 2150 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ)
HUFA75344P3

HUFA75344P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor
1,270 -

RFQ

HUFA75344P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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