Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK3984-ZK-E1-AY

2SK3984-ZK-E1-AY

MOSFET N-CH 100V 18A TO252

Renesas Electronics America Inc
2,500 -

RFQ

2SK3984-ZK-E1-AY

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) - 85mOhm @ 9A, 10V - 13 nC @ 10 V - 750 pF @ 10 V - 1W (Ta), 20W (Tc) 150°C (TJ) Surface Mount
UPA1724G-E1-A

UPA1724G-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDU3580

FDU3580

MOSFET N-CH 80V 7.7A IPAK

Fairchild Semiconductor
1,825 -

RFQ

FDU3580

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 80 V 7.7A (Ta) 6V, 10V 29mOhm @ 7.7A, 10V 4V @ 250µA 79 nC @ 10 V ±20V 1760 pF @ 40 V - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP50R350CP

IPP50R350CP

COOLMOS 10A, 500V N-CHANNEL

Infineon Technologies
1,500 -

RFQ

IPP50R350CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA1716G-E1-A

UPA1716G-E1-A

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,300 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDD6670A_NL

FDD6670A_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,112 -

RFQ

FDD6670A_NL

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 66A (Tc) 4.5V, 10V 8mOhm @ 15A, 10V 3V @ 250µA 22 nC @ 5 V ±20V 1755 pF @ 15 V - 1.3W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQI5N80TU

FQI5N80TU

MOSFET N-CH 800V 4.8A I2PAK

Fairchild Semiconductor
993 -

RFQ

FQI5N80TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.8A (Tc) 10V 2.6Ohm @ 2.4A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1250 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSS6N70A

SSS6N70A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
950 -

RFQ

SSS6N70A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 67 nC @ 10 V ±30V 1200 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75343G3

HUF75343G3

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor
546 -

RFQ

HUF75343G3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQAF28N15

FQAF28N15

MOSFET N-CH 150V 22A TO3PF

Fairchild Semiconductor
473 -

RFQ

FQAF28N15

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 22A (Tc) 10V 90mOhm @ 11A, 10V 4V @ 250µA 52 nC @ 10 V ±25V 1600 pF @ 25 V - 102W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S42N03L

RF1S42N03L

42A, 30V, 0.025 OHMS, N-CHANNEL

Harris Corporation
400 -

RFQ

RF1S42N03L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 5V 25mOhm @ 42A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N03S4L-03ATMA1

IPB80N03S4L-03ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
10,000 -

RFQ

IPB80N03S4L-03ATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF642

IRF642

N-CHANNEL POWER MOSFET

Harris Corporation
6,533 -

RFQ

IRF642

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 220mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6711STRPBF

IRF6711STRPBF

MOSFET N-CH 25V 19A/84A DIRECTFT

International Rectifier
4,800 -

RFQ

IRF6711STRPBF

Ficha técnica

Bulk DirectFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 84A (Tc) - 3.8mOhm @ 19A, 10V 2.35V @ 25µA 20 nC @ 4.5 V ±20V 1810 pF @ 13 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FQP9N50

FQP9N50

MOSFET N-CH 500V 9A TO220-3

Fairchild Semiconductor
3,432 -

RFQ

FQP9N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB80N03S4L03

IPB80N03S4L03

N-CHANNEL POWER MOSFET

Infineon Technologies
2,000 -

RFQ

IPB80N03S4L03

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.7mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1S22N10

RF1S22N10

N-CHANNEL POWER MOSFET

Harris Corporation
1,990 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFL1N12

RFL1N12

N-CHANNEL POWER MOSFET

Harris Corporation
845 -

RFQ

RFL1N12

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 120 V 1A (Tc) 10V 1.9Ohm @ 1A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFU1010Z

AUIRFU1010Z

MOSFET N-CH 55V 42A TO251-3

International Rectifier
825 -

RFQ

AUIRFU1010Z

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) - 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR420

IRFR420

2.5A 500V 3.000 OHM N-CHANNEL

Harris Corporation
779 -

RFQ

IRFR420

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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