Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFIZ48N

IRFIZ48N

MOSFET N-CH 55V 36A TO220AB FP

Infineon Technologies
2,388 -

RFQ

IRFIZ48N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 36A (Tc) 10V 16mOhm @ 22A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34E

IRFZ34E

MOSFET N-CH 60V 28A TO220AB

Infineon Technologies
2,497 -

RFQ

IRFZ34E

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 28A (Tc) 10V 42mOhm @ 17A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 680 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44E

IRFZ44E

MOSFET N-CH 60V 48A TO220AB

Infineon Technologies
3,323 -

RFQ

IRFZ44E

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3103D1

IRL3103D1

MOSFET N-CH 30V 64A TO220AB

Infineon Technologies
3,122 -

RFQ

IRL3103D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V ±16V 1900 pF @ 25 V - 2W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3303

IRL3303

MOSFET N-CH 30V 38A TO220AB

Infineon Technologies
3,641 -

RFQ

IRL3303

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI2203N

IRLI2203N

MOSFET N-CH 30V 61A TO220AB FP

Infineon Technologies
2,839 -

RFQ

IRLI2203N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 7mOhm @ 37A, 10V 1V @ 250µA 110 nC @ 4.5 V ±16V 3500 pF @ 25 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI3803

IRLI3803

MOSFET N-CH 30V 76A TO220AB FP

Infineon Technologies
3,274 -

RFQ

IRLI3803

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 76A (Tc) 4.5V, 10V 6mOhm @ 40A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI520N

IRLI520N

MOSFET N-CH 100V 8.1A TO220AB FP

Infineon Technologies
3,853 -

RFQ

IRLI520N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.1A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI530N

IRLI530N

MOSFET N-CH 100V 12A TO220AB FP

Infineon Technologies
3,442 -

RFQ

IRLI530N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±16V 800 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI540N

IRLI540N

MOSFET N-CH 100V 23A TO220AB FP

Infineon Technologies
3,653 -

RFQ

IRLI540N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 4V, 10V 44mOhm @ 12A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLIZ34N

IRLIZ34N

MOSFET N-CH 55V 22A TO220AB FP

Infineon Technologies
3,939 -

RFQ

IRLIZ34N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 22A (Tc) 4V, 10V 35mOhm @ 12A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807S

IRF2807S

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies
2,733 -

RFQ

IRF2807S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3315S

IRF3315S

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies
3,850 -

RFQ

IRF3315S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3415S

IRF3415S

MOSFET N-CH 150V 43A D2PAK

Infineon Technologies
3,049 -

RFQ

IRF3415S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44ES

IRFZ44ES

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies
3,694 -

RFQ

IRFZ44ES

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3103

IRLR3103

MOSFET N-CH 30V 55A DPAK

Infineon Technologies
3,326 -

RFQ

IRLR3103

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP048N

IRFP048N

MOSFET N-CH 55V 64A TO247AC

Infineon Technologies
3,546 -

RFQ

IRFP048N

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 16mOhm @ 37A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 1900 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP140N

IRFP140N

MOSFET N-CH 100V 33A TO247AC

Infineon Technologies
3,752 -

RFQ

IRFP140N

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 33A (Tc) 10V 52mOhm @ 16A, 10V 4V @ 250µA 94 nC @ 10 V ±20V 1400 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP150N

IRFP150N

MOSFET N-CH 100V 42A TO247AC

Infineon Technologies
2,123 -

RFQ

IRFP150N

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 23A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7421D1

IRF7421D1

MOSFET N-CH 30V 5.8A 8SO

Infineon Technologies
3,358 -

RFQ

IRF7421D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 4.5V, 10V 35mOhm @ 4.1A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 510 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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