Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF6218PBF

IRF6218PBF

IRF6218 - 20V-250V P-CHANNEL POW

Infineon Technologies
3,206 -

RFQ

IRF6218PBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 150mOhm @ 16A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 2210 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB067N08N3GATMA1

IPB067N08N3GATMA1

IPB067N08N3 G - 20V-30V N-CHANNE

Infineon Technologies
2,682 -

RFQ

IPB067N08N3GATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 6.7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N06S4L05ATMA2

IPB80N06S4L05ATMA2

MOSFET_)40V,60V)

Infineon Technologies
3,791 -

RFQ

IPB80N06S4L05ATMA2

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 4.5V, 10V 5.1mOhm @ 80A, 10V 2.2V @ 60µA 110 nC @ 10 V ±16V 8180 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB61N15DPBF

IRFB61N15DPBF

IRFB61N15 - 12V-300V N-CHANNEL P

Infineon Technologies
2,910 -

RFQ

IRFB61N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) - 32mOhm @ 36A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3470 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD25DP06LMATMA1

IPD25DP06LMATMA1

IPD06P005 - TRENCH 40<-<100V

Infineon Technologies
3,156 -

RFQ

IPD25DP06LMATMA1

Ficha técnica

Bulk OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 6.5A (Tc) 4.5V, 10V 250mOhm @ 6.5A, 10V 2V @ 270µA 13.8 nC @ 10 V ±20V 420 pF @ 30 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISC026N03L5SATMA1

ISC026N03L5SATMA1

TRENCH <= 40V

Infineon Technologies
2,087 -

RFQ

ISC026N03L5SATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR48ZTRL

AUIRFR48ZTRL

AUIRFR48Z - 20V-800V AUTOMOTIVE

Infineon Technologies
3,428 -

RFQ

AUIRFR48ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPP20N60C3

SPP20N60C3

POWER FIELD-EFFECT TRANSISTOR, 2

Infineon Technologies
3,729 -

RFQ

SPP20N60C3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP50R190CEXKSA1

IPP50R190CEXKSA1

IPP50R190 - 500V, 0.19OHM, N-CHA

Infineon Technologies
2,361 -

RFQ

IPP50R190CEXKSA1

Ficha técnica

Bulk CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 18.5A (Tc) 13V 190mOhm @ 6.2A, 13V 3.5V @ 510µA 47.2 nC @ 10 V ±20V 1137 pF @ 100 V - 127W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R120C3FKSA1

IPW90R120C3FKSA1

MOSFET N-CH 900V 36A TO247-3 COO

Infineon Technologies
2,813 -

RFQ

IPW90R120C3FKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 36A (Tc) 10V 120mOhm @ 26A, 10V 3.5V @ 2.9mA 270 nC @ 10 V ±20V 6800 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS670S2LH6433XTMA1

BSS670S2LH6433XTMA1

SMALL SIGNAL MOSFETS

Infineon Technologies
2,408 -

RFQ

BSS670S2LH6433XTMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF7410GTRPBF

IRF7410GTRPBF

IRF7410 - 16A, 12V, 0.007OHM, P-

Infineon Technologies
3,593 -

RFQ

IRF7410GTRPBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 12 V 16A (Ta) 1.8V, 4.5V 7mOhm @ 16A, 4.5V 900mV @ 250µA 91 nC @ 4.5 V ±8V 8676 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD60R380P6ATMA1

IPD60R380P6ATMA1

XPD60R380 - LOW POWER_LEGACY

Infineon Technologies
2,318 -

RFQ

IPD60R380P6ATMA1

Ficha técnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 10.6A (Tc) 10V 380mOhm @ 3.8A, 10V 4.5V @ 320µA 19 nC @ 10 V ±20V 877 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS7430PBF

IRFS7430PBF

TRENCH <= 40V

Infineon Technologies
2,140 -

RFQ

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6623TRPBF

IRF6623TRPBF

IRF6623 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,842 -

RFQ

IRF6623TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 16A (Ta), 55A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.2V @ 250µA 17 nC @ 4.5 V ±20V 1360 pF @ 10 V - 1.4W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFB8407

AUIRFB8407

AUIRFB8407 - 20V-40V N-CHANNEL A

Infineon Technologies
2,428 -

RFQ

AUIRFB8407

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R0706P

IPW60R0706P

600V COOLMOS N-CHANNEL POWER MOS

Infineon Technologies
2,484 -

RFQ

IPW60R0706P

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPL60R095CFD7AUMA1

IPL60R095CFD7AUMA1

HIGH POWER_NEW

Infineon Technologies
3,709 -

RFQ

IPL60R095CFD7AUMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPI120N10S403AKSA1

IPI120N10S403AKSA1

IPI120N10S4-03 - 75V-100V N-CHAN

Infineon Technologies
2,117 -

RFQ

IPI120N10S403AKSA1

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 3.9mOhm @ 100A, 10V 3.5V @ 180µA 140 nC @ 10 V ±20V 10120 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD60R750E6ATMA1

IPD60R750E6ATMA1

IPD60R750 - 600V COOLMOS N-CHANN

Infineon Technologies
2,781 -

RFQ

IPD60R750E6ATMA1

Ficha técnica

Bulk CoolMOS™ E6 Active N-Channel MOSFET (Metal Oxide) 600 V 5.7A (Tc) 10V 750mOhm @ 2A, 10V 3.5V @ 170µA 17.2 nC @ 10 V ±20V 373 pF @ 100 V - 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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