Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IMW65R107M1HXKSA1

IMW65R107M1HXKSA1

SILICON CARBIDE MOSFET

Infineon Technologies
3,341 -

RFQ

IMW65R107M1HXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP60R600E6XKSA1

IPP60R600E6XKSA1

IPP60R600 - COOLMOS N-CHANNEL PO

Infineon Technologies
3,760 -

RFQ

IPP60R600E6XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP17N80C3XKSA1

SPP17N80C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,712 -

RFQ

SPP17N80C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 177 nC @ 10 V ±20V 2320 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6636TRPBF

IRF6636TRPBF

IRF6636 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,581 -

RFQ

IRF6636TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 18A (Ta), 81A (Tc) 4.5V, 10V 4.5mOhm @ 18A, 10V 2.45V @ 250µA 27 nC @ 4.5 V ±20V 2420 pF @ 10 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPB019N08N5ATMA1

IPB019N08N5ATMA1

TRENCH 40<-<100V

Infineon Technologies
2,282 -

RFQ

IPB019N08N5ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPL60R180P6AUMA1

IPL60R180P6AUMA1

HIGH POWER_LEGACY

Infineon Technologies
2,219 -

RFQ

IPL60R180P6AUMA1

Ficha técnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 22.4A (Tc) 10V 180mOhm @ 9A, 10V 4.5V @ 750µA 44 nC @ 10 V ±20V 2080 pF @ 100 V - 176W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPW65R041CFDFKSA2

IPW65R041CFDFKSA2

HIGH POWER_LEGACY

Infineon Technologies
2,583 -

RFQ

IPW65R041CFDFKSA2

Ficha técnica

Bulk CoolMOS™ CFD2 Active N-Channel MOSFET (Metal Oxide) 650 V 68.5A (Tc) 10V 41mOhm @ 33.1A, 10V 4.5V @ 3.3mA 300 nC @ 10 V ±20V 8400 pF @ 100 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISZ019N03L5SATMA1

ISZ019N03L5SATMA1

TRENCH <= 40V

Infineon Technologies
2,260 -

RFQ

ISZ019N03L5SATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 40A (Tc) 4.5V, 10V 1.9mOhm @ 20A, 10V 2V @ 250µA 44 nC @ 10 V ±20V 2800 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
AUIRF3205Z

AUIRF3205Z

AUIRF3205Z - 55V-60V N-CHANNEL A

Infineon Technologies
3,551 -

RFQ

AUIRF3205Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISC045N03L5SATMA1

ISC045N03L5SATMA1

TRENCH <= 40V

Infineon Technologies
2,214 -

RFQ

ISC045N03L5SATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 63A (Tc) 4.5V, 10V 4.5mOhm @ 30A, 10V 2V @ 250µA 13 nC @ 10 V ±20V 870 pF @ 15 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6614TRPBF

IRF6614TRPBF

IRF6614 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,927 -

RFQ

IRF6614TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 12.7A (Ta), 55A (Tc) 4.5V, 10V 8.3mOhm @ 12.7A, 10V 2.25V @ 250µA 29 nC @ 4.5 V ±20V 2560 pF @ 20 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPN80R2K0P7ATMA1

IPN80R2K0P7ATMA1

LOW POWER_NEW

Infineon Technologies
3,734 -

RFQ

IPN80R2K0P7ATMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 2Ohm @ 940mA, 10V 3.5V @ 50µA 9 nC @ 10 V ±20V 175 pF @ 500 V - 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRF1010EZS

AUIRF1010EZS

AUIRF1010 - 55V-60V N-CHANNEL AU

Infineon Technologies
2,317 -

RFQ

AUIRF1010EZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 250µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6898MTRPBF

IRF6898MTRPBF

IRF6898 - 12V-300V N-CHANNEL POW

Infineon Technologies
2,383 -

RFQ

IRF6898MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 40A (Ta), 214A (Tc) - 1.1mOhm @ 40A, 10V 2.1V @ 100µA 68 nC @ 4.5 V ±16V 5630 pF @ 13 V Schottky Diode (Body) 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPP11N60C3XKSA1

SPP11N60C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,669 -

RFQ

SPP11N60C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPN70R1K4P7SATMA1

IPN70R1K4P7SATMA1

CONSUMER

Infineon Technologies
2,044 -

RFQ

IPN70R1K4P7SATMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 10 V ±16V 158 pF @ 400 V - 6.2W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRFZ44NS

AUIRFZ44NS

AUIRFZ44 - 55V-60V N-CHANNEL AUT

Infineon Technologies
3,878 -

RFQ

AUIRFZ44NS

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) - 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC0703LSATMA1

BSC0703LSATMA1

MOSFET N-CH 60V 15A/64A TDSON

Infineon Technologies
3,269 -

RFQ

BSC0703LSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 64A (Tc) 4.5V, 10V 6.5mOhm @ 32A, 10V 2.3V @ 20µA 13 nC @ 4.5 V ±20V 1800 pF @ 30 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPB65R660CFDATMA1

IPB65R660CFDATMA1

MOSFET N-CH 650V 6A D2PAK

Infineon Technologies
2,084 -

RFQ

IPB65R660CFDATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH4210DTRPBF

IRFH4210DTRPBF

MOSFET N-CH 25V 44A PQFN

Infineon Technologies
2,239 -

RFQ

IRFH4210DTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 25 V 44A (Ta) 4.5V, 10V 1.1mOhm @ 50A, 10V 2.1V @ 100µA 77 nC @ 10 V ±20V 4812 pF @ 13 V - 3.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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