Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7811A

IRF7811A

MOSFET N-CH 28V 11A 8SO

Infineon Technologies
2,709 -

RFQ

IRF7811A

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 28 V 11A (Ta) 4.5V 10mOhm @ 11A, 10V 3V @ 250µA 26 nC @ 4.5 V ±12V 1760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7811ATR

IRF7811ATR

MOSFET N-CH 28V 11A 8SO

Infineon Technologies
2,482 -

RFQ

IRF7811ATR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 28 V 11A (Ta) 4.5V 10mOhm @ 11A, 10V 3V @ 250µA 26 nC @ 4.5 V ±12V 1760 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9520NS

IRF9520NS

MOSFET P-CH 100V 6.8A D2PAK

Infineon Technologies
2,183 -

RFQ

IRF9520NS

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9530NS

IRF9530NS

MOSFET P-CH 100V 14A D2PAK

Infineon Technologies
3,546 -

RFQ

IRF9530NS

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24NS

IRF9Z24NS

MOSFET P-CH 55V 12A D2PAK

Infineon Technologies
2,322 -

RFQ

IRF9Z24NS

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP9140N

IRFP9140N

MOSFET P-CH 100V 23A TO247AC

Infineon Technologies
3,580 -

RFQ

IRFP9140N

Ficha técnica

Bag HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 13A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
94-4737

94-4737

MOSFET N-CH 30V 33A DPAK

Infineon Technologies
3,678 -

RFQ

94-4737

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3303TR

IRFR3303TR

MOSFET N-CH 30V 33A DPAK

Infineon Technologies
3,578 -

RFQ

IRFR3303TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3910TRL

IRFR3910TRL

MOSFET N-CH 100V 16A DPAK

Infineon Technologies
2,853 -

RFQ

IRFR3910TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5505

IRFR5505

MOSFET P-CH 55V 18A DPAK

Infineon Technologies
2,932 -

RFQ

IRFR5505

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFU3303

IRFU3303

MOSFET N-CH 30V 33A IPAK

Infineon Technologies
3,970 -

RFQ

IRFU3303

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU5305

IRFU5305

MOSFET P-CH 55V 31A IPAK

Infineon Technologies
3,769 -

RFQ

IRFU5305

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU5505

IRFU5505

MOSFET P-CH 55V 18A IPAK

Infineon Technologies
3,037 -

RFQ

IRFU5505

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU9120N

IRFU9120N

MOSFET P-CH 100V 6.6A IPAK

Infineon Technologies
2,065 -

RFQ

IRFU9120N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ34NS

IRFZ34NS

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies
2,489 -

RFQ

IRFZ34NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ34NSTRR

IRFZ34NSTRR

MOSFET N-CH 55V 29A D2PAK

Infineon Technologies
2,518 -

RFQ

IRFZ34NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 29A (Tc) 10V 40mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44ESTRR

IRFZ44ESTRR

MOSFET N-CH 60V 48A D2PAK

Infineon Technologies
2,057 -

RFQ

IRFZ44ESTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 48A (Tc) 10V 23mOhm @ 29A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1360 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44NL

IRFZ44NL

MOSFET N-CH 55V 49A TO262

Infineon Technologies
2,918 -

RFQ

IRFZ44NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46NS

IRFZ46NS

MOSFET N-CH 55V 53A D2PAK

Infineon Technologies
3,426 -

RFQ

IRFZ46NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 16.5mOhm @ 28A, 10V 4V @ 250µA 72 nC @ 10 V ±20V 1696 pF @ 25 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-2989

94-2989

MOSFET N-CH 55V 64A D2PAK

Infineon Technologies
3,124 -

RFQ

94-2989

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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