Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
64-0007

64-0007

MOSFET N-CH 200V 18A TO220AB

Infineon Technologies
3,622 -

RFQ

64-0007

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9410

IRF9410

MOSFET N-CH 30V 7A 8SO

Infineon Technologies
2,806 -

RFQ

IRF9410

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 30mOhm @ 7A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 550 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7201TR

IRF7201TR

MOSFET N-CH 30V 7.3A 8SO

Infineon Technologies
3,012 -

RFQ

IRF7201TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.3A (Tc) 4.5V, 10V 30mOhm @ 7.3A, 10V 1V @ 250µA 28 nC @ 10 V ±20V 550 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7220

IRF7220

MOSFET P-CH 14V 11A 8SO

Infineon Technologies
2,833 -

RFQ

IRF7220

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 14 V 11A (Ta) 2.5V, 4.5V 12mOhm @ 11A, 4.5V 600mV @ 250µA (Min) 125 nC @ 5 V ±12V 8075 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7321D2

IRF7321D2

MOSFET P-CH 30V 4.7A 8SO

Infineon Technologies
2,366 -

RFQ

IRF7321D2

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 62mOhm @ 4.9A, 10V 1V @ 250µA 34 nC @ 10 V ±20V 710 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7321D2TR

IRF7321D2TR

MOSFET P-CH 30V 4.7A 8SO

Infineon Technologies
2,378 -

RFQ

IRF7321D2TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) 4.5V, 10V 62mOhm @ 4.9A, 10V 1V @ 250µA 34 nC @ 10 V ±20V 710 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7324D1

IRF7324D1

MOSFET P-CH 20V 2.2A 8SO

Infineon Technologies
2,792 -

RFQ

IRF7324D1

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 7.8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7326D2TR

IRF7326D2TR

MOSFET P-CH 30V 3.6A 8SO

Infineon Technologies
2,826 -

RFQ

IRF7326D2TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 100mOhm @ 1.8A, 10V 1V @ 250µA 25 nC @ 10 V ±20V 440 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7353D1

IRF7353D1

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies
2,285 -

RFQ

IRF7353D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 32mOhm @ 5.8A, 10V 1V @ 250µA 33 nC @ 10 V ±20V 650 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7353D1TR

IRF7353D1TR

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies
2,166 -

RFQ

IRF7353D1TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 32mOhm @ 5.8A, 10V 1V @ 250µA 33 nC @ 10 V ±20V 650 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7455

IRF7455

MOSFET N-CH 30V 15A 8SO

Infineon Technologies
2,848 -

RFQ

IRF7455

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 2.8V, 10V 7.5mOhm @ 15A, 10V 2V @ 250µA 56 nC @ 5 V ±12V 3480 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7463

IRF7463

MOSFET N-CH 30V 14A 8SO

Infineon Technologies
3,968 -

RFQ

IRF7463

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 2.7V, 10V 8mOhm @ 14A, 10V 2V @ 250µA 51 nC @ 4.5 V ±12V 3150 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7663

IRF7663

MOSFET P-CH 20V 8.2A MICRO8

Infineon Technologies
3,295 -

RFQ

IRF7663

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 8.2A (Ta) 2.5V, 4.5V 20mOhm @ 7A, 4.5V 1.2V @ 250µA 45 nC @ 5 V ±12V 2520 pF @ 10 V - 1.8W (Ta) - Surface Mount
IRF7807

IRF7807

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,573 -

RFQ

IRF7807

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807D1

IRF7807D1

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,978 -

RFQ

IRF7807D1

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - Schottky Diode (Isolated) 2.5W (Tc) - Surface Mount
IRF7807D2

IRF7807D2

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
3,169 -

RFQ

IRF7807D2

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - Schottky Diode (Isolated) 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7807TR

IRF7807TR

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies
2,914 -

RFQ

IRF7807TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V 1V @ 250µA 17 nC @ 5 V ±12V - - 2.5W (Ta) - Surface Mount
IRF7809

IRF7809

MOSFET N-CH 30V 17.6A 8SO

Infineon Technologies
3,064 -

RFQ

IRF7809

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.6A (Ta) 4.5V 7.5mOhm @ 15A, 4.5V 1V @ 250µA 86 nC @ 5 V ±12V 7300 pF @ 16 V - 3.5W (Ta) - Surface Mount
IRF7809A

IRF7809A

MOSFET N-CH 30V 14.5A 8SO

Infineon Technologies
2,576 -

RFQ

IRF7809A

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14.5A (Ta) 4.5V 8.5mOhm @ 15A, 4.5V 1V @ 250µA 75 nC @ 5 V ±12V 7300 pF @ 16 V - 2.5W (Ta) - Surface Mount
IRF7811

IRF7811

MOSFET N-CH 28V 14A 8SO

Infineon Technologies
3,687 -

RFQ

IRF7811

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 28 V 14A (Ta) 4.5V 11mOhm @ 15A, 4.5V 1V @ 250µA 23 nC @ 5 V ±12V 1800 pF @ 16 V - 3.5W (Ta) - Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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