Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLMS5703TR

IRLMS5703TR

MOSFET P-CH 30V 2.3A 6-TSOP

Infineon Technologies
2,423 -

RFQ

IRLMS5703TR

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2.3A (Ta) - 200mOhm @ 1.6A, 10V 1V @ 250µA 11 nC @ 10 V - 170 pF @ 25 V - - - Surface Mount
IRLMS6702TR

IRLMS6702TR

MOSFET P-CH 20V 2.4A 6-TSOP

Infineon Technologies
2,041 -

RFQ

IRLMS6702TR

Ficha técnica

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) - 200mOhm @ 1.6A, 4.5V 700mV @ 250µA (Min) 8.8 nC @ 4.5 V - 210 pF @ 15 V - - - Surface Mount
94-2386

94-2386

MOSFET N-CH 55V 49A D2PAK

Infineon Technologies
2,937 -

RFQ

94-2386

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 17.5mOhm @ 25A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1470 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLML2402TR

IRLML2402TR

MOSFET N-CH 20V 1.2A SOT-23

Infineon Technologies
3,648 -

RFQ

IRLML2402TR

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) - 250mOhm @ 930mA, 4.5V 700mV @ 250µA (Min) 3.9 nC @ 4.5 V - 110 pF @ 15 V - - - Surface Mount
IRL3502S

IRL3502S

MOSFET N-CH 20V 110A D2PAK

Infineon Technologies
3,688 -

RFQ

IRL3502S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 110A (Tc) 4.5V, 7V 7mOhm @ 64A, 7V 700mV @ 250µA (Min) 110 nC @ 4.5 V ±10V 4700 pF @ 15 V - 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL5602S

IRL5602S

MOSFET P-CH 20V 24A D2PAK

Infineon Technologies
2,172 -

RFQ

IRL5602S

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 24A (Tc) 2.5V, 4.5V 42mOhm @ 12A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 1460 pF @ 15 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-4007

94-4007

MOSFET N-CH 30V 35A DPAK

Infineon Technologies
2,456 -

RFQ

94-4007

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 31mOhm @ 21A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7403TR

IRF7403TR

MOSFET N-CH 30V 8.5A 8SO

Infineon Technologies
2,899 -

RFQ

IRF7403TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.5A (Ta) 4.5V, 10V 22mOhm @ 4A, 10V 1V @ 250µA 57 nC @ 10 V ±20V 1200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLU3103

IRLU3103

MOSFET N-CH 30V 55A I-PAK

Infineon Technologies
3,124 -

RFQ

IRLU3103

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 19mOhm @ 33A, 10V 1V @ 250µA 50 nC @ 4.5 V ±16V 1600 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU2905

IRLU2905

MOSFET N-CH 55V 42A I-PAK

Infineon Technologies
3,249 -

RFQ

IRLU2905

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4V, 10V 27mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
94-4796

94-4796

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
3,674 -

RFQ

94-4796

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3515S

IRF3515S

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
3,514 -

RFQ

IRF3515S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710STRR

IRF3710STRR

MOSFET N-CH 100V 57A D2PAK

Infineon Technologies
2,546 -

RFQ

IRF3710STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520NS

IRF520NS

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
3,307 -

RFQ

IRF520NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5210STRR

IRF5210STRR

MOSFET P-CH 100V 40A D2PAK

Infineon Technologies
3,968 -

RFQ

IRF5210STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-4582

94-4582

MOSFET P-CH 55V 31A D2PAK

Infineon Technologies
3,919 -

RFQ

94-4582

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF530NS

IRF530NS

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
3,689 -

RFQ

IRF530NS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 90mOhm @ 9A, 10V 4V @ 250µA 37 nC @ 10 V ±20V 920 pF @ 25 V - 3.8W (Ta), 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6215S

IRF6215S

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
3,892 -

RFQ

IRF6215S

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6215STRR

IRF6215STRR

MOSFET P-CH 150V 13A D2PAK

Infineon Technologies
2,755 -

RFQ

IRF6215STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF630NS

IRF630NS

MOSFET N-CH 200V 9.3A D2PAK

Infineon Technologies
2,233 -

RFQ

IRF630NS

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.3A (Tc) 10V 300mOhm @ 5.4A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 575 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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