Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3803S

IRL3803S

MOSFET N-CH 30V 140A D2PAK

Infineon Technologies
3,886 -

RFQ

IRL3803S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520N

IRF520N

MOSFET N-CH 100V 9.7A TO220AB

Infineon Technologies
2,028 -

RFQ

IRF520N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
94-2304

94-2304

MOSFET N-CH 30V 116A TO220AB

Infineon Technologies
2,874 -

RFQ

94-2304

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 1V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3803

IRL3803

MOSFET N-CH 30V 140A TO220AB

Infineon Technologies
3,599 -

RFQ

IRL3803

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP044N

IRFP044N

MOSFET N-CH 55V 53A TO247AC

Infineon Technologies
3,372 -

RFQ

IRFP044N

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 53A (Tc) 10V 20mOhm @ 29A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1500 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP054N

IRFP054N

MOSFET N-CH 55V 81A TO247AC

Infineon Technologies
2,063 -

RFQ

IRFP054N

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 81A (Tc) 10V 12mOhm @ 43A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2900 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR1205

IRFR1205

MOSFET N-CH 55V 44A DPAK

Infineon Technologies
2,198 -

RFQ

IRFR1205

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
94-4762

94-4762

MOSFET N-CH 55V 27A DPAK

Infineon Technologies
2,800 -

RFQ

94-4762

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFL4105TR

IRFL4105TR

MOSFET N-CH 55V 3.7A SOT223

Infineon Technologies
3,409 -

RFQ

IRFL4105TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3.7A (Ta) 10V 45mOhm @ 3.7A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 660 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL4310TR

IRFL4310TR

MOSFET N-CH 100V 1.6A SOT223

Infineon Technologies
2,643 -

RFQ

IRFL4310TR

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.6A (Ta) - 200mOhm @ 1.6A, 10V 4V @ 250µA 25 nC @ 10 V - 330 pF @ 25 V - - - Surface Mount
IRLL2705TR

IRLL2705TR

MOSFET N-CH 55V 3.8A SOT223

Infineon Technologies
2,990 -

RFQ

IRLL2705TR

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 55 V 3.8A (Ta) - 40mOhm @ 3.8A, 10V 2V @ 250µA 48 nC @ 10 V - 870 pF @ 25 V - - - Surface Mount
IRLL3303TR

IRLL3303TR

MOSFET N-CH 30V 4.6A SOT223

Infineon Technologies
3,021 -

RFQ

IRLL3303TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 4.5V, 10V 31mOhm @ 4.6A, 10V 1V @ 250µA 50 nC @ 10 V ±16V 840 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
94-2310

94-2310

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
2,695 -

RFQ

94-2310

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3315

IRF3315

MOSFET N-CH 150V 27A TO220AB

Infineon Technologies
2,675 -

RFQ

IRF3315

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 27A (Tc) 10V 70mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI1310N

IRFI1310N

MOSFET N-CH 100V 24A TO220AB FP

Infineon Technologies
2,245 -

RFQ

IRFI1310N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 24A (Tc) 10V 36mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1900 pF @ 25 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI520N

IRFI520N

MOSFET N-CH 100V 7.6A TO220AB FP

Infineon Technologies
3,197 -

RFQ

IRFI520N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.6A (Tc) 10V 200mOhm @ 4.3A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI530N

IRFI530N

MOSFET N-CH 100V 12A TO220AB FP

Infineon Technologies
3,251 -

RFQ

IRFI530N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 110mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ24E

IRFIZ24E

MOSFET N-CH 60V 14A TO220AB FP

Infineon Technologies
2,662 -

RFQ

IRFIZ24E

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 71mOhm @ 7.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ34E

IRFIZ34E

MOSFET N-CH 60V 21A TO220AB FP

Infineon Technologies
3,560 -

RFQ

IRFIZ34E

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 21A (Tc) 10V 42mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ46N

IRFIZ46N

MOSFET N-CH 55V 33A TO220AB FP

Infineon Technologies
3,814 -

RFQ

IRFIZ46N

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 33A (Tc) 10V 20mOhm @ 19A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1500 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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