Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9530NL

IRF9530NL

MOSFET P-CH 100V 14A TO262

Infineon Technologies
3,719 -

RFQ

IRF9530NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9540NL

IRF9540NL

MOSFET P-CH 100V 23A TO262

Infineon Technologies
3,004 -

RFQ

IRF9540NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24NL

IRF9Z24NL

MOSFET P-CH 55V 12A TO262

Infineon Technologies
3,866 -

RFQ

IRF9Z24NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z34NL

IRF9Z34NL

MOSFET P-CH 55V 19A TO262

Infineon Technologies
2,314 -

RFQ

IRF9Z34NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010ESTRR

IRF1010ESTRR

MOSFET N-CH 60V 84A D2PAK

Infineon Technologies
3,975 -

RFQ

IRF1010ESTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010NSTRL

IRF1010NSTRL

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
2,930 -

RFQ

IRF1010NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010NSTRR

IRF1010NSTRR

MOSFET N-CH 55V 85A D2PAK

Infineon Technologies
2,726 -

RFQ

IRF1010NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1104L

IRF1104L

MOSFET N-CH 40V 100A TO262

Infineon Technologies
2,840 -

RFQ

IRF1104L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 2.4W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1104S

IRF1104S

MOSFET N-CH 40V 100A D2PAK

Infineon Technologies
2,020 -

RFQ

IRF1104S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 2.4W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1104STRL

IRF1104STRL

MOSFET N-CH 40V 100A D2PAK

Infineon Technologies
3,582 -

RFQ

IRF1104STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 2.4W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1104STRR

IRF1104STRR

MOSFET N-CH 40V 100A D2PAK

Infineon Technologies
3,849 -

RFQ

IRF1104STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 2.4W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1310NSTRR

IRF1310NSTRR

MOSFET N-CH 100V 42A D2PAK

Infineon Technologies
2,499 -

RFQ

IRF1310NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 3.8W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1404STRR

IRF1404STRR

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies
2,950 -

RFQ

IRF1404STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1405S

IRF1405S

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies
3,253 -

RFQ

IRF1405S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1405STRR

IRF1405STRR

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies
3,415 -

RFQ

IRF1405STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807STRL

IRF2807STRL

MOSFET N-CH 75V 82A D2PAK

Infineon Technologies
3,313 -

RFQ

IRF2807STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205STRR

IRF3205STRR

MOSFET N-CH 55V 110A D2PAK

Infineon Technologies
2,323 -

RFQ

IRF3205STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3315STRL

IRF3315STRL

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies
3,675 -

RFQ

IRF3315STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3315STRR

IRF3315STRR

MOSFET N-CH 150V 21A D2PAK

Infineon Technologies
3,408 -

RFQ

IRF3315STRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Tc) 10V 82mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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