Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPD50N04S308ATMA1

IPD50N04S308ATMA1

IPD50N04 - 20V-40V N-CHANNEL AUT

Infineon Technologies
2,855 -

RFQ

IPD50N04S308ATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 7.5mOhm @ 50A, 10V 4V @ 40µA 35 nC @ 10 V ±20V 2350 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6617TRPBF

IRF6617TRPBF

IRF6617 - 12V-300V N-CHANNEL POW

Infineon Technologies
3,599 -

RFQ

IRF6617TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 55A (Tc) 4.5V, 10V 8.1mOhm @ 15A, 10V 2.35V @ 250µA 17 nC @ 4.5 V ±20V 1300 pF @ 15 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPL60R285P7AUMA1

IPL60R285P7AUMA1

LOW POWER_NEW

Infineon Technologies
2,363 -

RFQ

IPL60R285P7AUMA1

Ficha técnica

Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 3.8A, 10V 4V @ 190µA 18 nC @ 10 V ±20V 761 pF @ 400 V - 59W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP60R330P6XKSA1

IPP60R330P6XKSA1

IPP60R330 - 600V COOLMOS N-CHANN

Infineon Technologies
2,772 -

RFQ

IPP60R330P6XKSA1

Ficha técnica

Bulk CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 330mOhm @ 4.5A, 10V 4.5V @ 370µA 22 nC @ 10 V ±20V 1010 pF @ 100 V - 93W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB65R150CFDATMA1

IPB65R150CFDATMA1

HIGH POWER_LEGACY

Infineon Technologies
3,161 -

RFQ

IPB65R150CFDATMA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V 4.5V @ 900µA 86 nC @ 10 V ±20V 2340 pF @ 100 V - 195.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPT60R125CFD7XTMA1

IPT60R125CFD7XTMA1

HIGH POWER_NEW

Infineon Technologies
3,840 -

RFQ

IPT60R125CFD7XTMA1

Ficha técnica

Bulk CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 125mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1330 pF @ 400 V - 127W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SP370251160XTMA3

SP370251160XTMA3

SP370251160 - XENSIV - INTEGRATE

Infineon Technologies
2,620 -

RFQ

SP370251160XTMA3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFR2405

AUIRFR2405

AUIRFR2405 - 55V-60V N-CHANNEL A

Infineon Technologies
2,219 -

RFQ

AUIRFR2405

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 16mOhm @ 34A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2430 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFN8403TR

AUIRFN8403TR

AUIRFN8403 - 20V-40V N-CHANNEL A

Infineon Technologies
2,029 -

RFQ

AUIRFN8403TR

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) - 3.3mOhm @ 50A, 10V 3.9V @ 100µA 98 nC @ 10 V ±20V 3174 pF @ 25 V - 4.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7319QTR

AUIRF7319QTR

MOSFET_(20V,40V)

Infineon Technologies
3,490 -

RFQ

AUIRF7319QTR

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW60R190E6FKSA1

IPW60R190E6FKSA1

IPW60R190 - 600V COOLMOS N-CHANN

Infineon Technologies
2,743 -

RFQ

IPW60R190E6FKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI11N65C3XKSA1

SPI11N65C3XKSA1

LOW POWER_LEGACY

Infineon Technologies
3,411 -

RFQ

SPI11N65C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW90R1K0C3FKSA1

IPW90R1K0C3FKSA1

IPW90R1 - 900V COOLMOS N-CHANNEL

Infineon Technologies
2,002 -

RFQ

IPW90R1K0C3FKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 5.7A (Tc) 10V 1Ohm @ 3.3A, 10V 3.5V @ 370µA 34 nC @ 10 V ±20V 850 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSP135H6433XTMA1

BSP135H6433XTMA1

BSP135 - POWER FIELD-EFFECT TRAN

Infineon Technologies
3,862 -

RFQ

BSP135H6433XTMA1

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 600 V 120mA (Ta) 0V, 10V 45Ohm @ 120mA, 10V 1V @ 94µA 4.9 nC @ 5 V ±20V 146 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPU60R600C6AKMA1

IPU60R600C6AKMA1

IPU60R600 - COOLMOS N-CHANNEL PO

Infineon Technologies
3,040 -

RFQ

IPU60R600C6AKMA1

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V 3.5V @ 200µA 20.5 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPDD60R102G7XTMA1

IPDD60R102G7XTMA1

IPDD60R102 - HIGH POWER_NEW

Infineon Technologies
3,851 -

RFQ

IPDD60R102G7XTMA1

Ficha técnica

Bulk CoolMOS™ G7 Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 102mOhm @ 7.8A, 10V 4V @ 390µA 34 nC @ 10 V ±20V 1320 pF @ 400 V - 139W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AUIRFN8458TR

AUIRFN8458TR

AUIRFN8458 - 20V-40V N-CHANNEL A

Infineon Technologies
2,012 -

RFQ

AUIRFN8458TR

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP11N65C3XKSA1

SPP11N65C3XKSA1

SPP11N65C3 - 650V-700V COOLMOS N

Infineon Technologies
2,051 -

RFQ

SPP11N65C3XKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRLR3636

AUIRLR3636

AUIRLR3636 - 55V-60V N-CHANNEL A

Infineon Technologies
2,943 -

RFQ

AUIRLR3636

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1324STRL7P

AUIRF1324STRL7P

AUIRF1324 - 20V-40V N-CHANNEL AU

Infineon Technologies
3,457 -

RFQ

AUIRF1324STRL7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 340A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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