Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUZ30N08S5N186ATMA1

IAUZ30N08S5N186ATMA1

MOSFET_(75V 120V( PG-TSDSON-8

Infineon Technologies
3,587 -

RFQ

IAUZ30N08S5N186ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tj) 6V, 10V 18.6mOhm @ 15A, 10V 3.8V @ 13µA 12.1 nC @ 10 V ±20V 759 pF @ 40 V - 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP034NE7N3GXKSA1

IPP034NE7N3GXKSA1

MOSFET N-CH 75V 100A TO220-3

Infineon Technologies
1,480 -

RFQ

IPP034NE7N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 3.4mOhm @ 100A, 10V 3.8V @ 155µA 117 nC @ 10 V ±20V 8130 pF @ 37.5 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPBE65R230CFD7AATMA1

IPBE65R230CFD7AATMA1

MOSFET N-CH 650V 11A TO263-7

Infineon Technologies
3,476 -

RFQ

IPBE65R230CFD7AATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 230mOhm @ 5.2A, 10V 4.5V @ 260µA 23 nC @ 10 V ±20V 1044 pF @ 400 V - 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSZ058N03LSGATMA1

BSZ058N03LSGATMA1

MOSFET N-CH 30V 15A/40A 8TSDSON

Infineon Technologies
2,726 -

RFQ

BSZ058N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 40A (Tc) 4.5V, 10V 5.8mOhm @ 20A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 2400 pF @ 15 V - 2.1W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R600P7SE8228AUMA1

IPD60R600P7SE8228AUMA1

MOSFET N-CH 600V 6A TO252-3

Infineon Technologies
3,734 -

RFQ

Tape & Reel (TR) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 30W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSZ088N03MSGATMA1

BSZ088N03MSGATMA1

MOSFET N-CH 30V 11A/40A 8TSDSON

Infineon Technologies
3,396 -

RFQ

BSZ088N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 40A (Tc) 4.5V, 10V 8mOhm @ 20A, 10V 2V @ 250µA 27 nC @ 10 V ±20V 2100 pF @ 15 V - 2.1W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD088N06N3GBTMA1

IPD088N06N3GBTMA1

MOSFET N-CH 60V 50A TO252-3

Infineon Technologies
3,123 -

RFQ

IPD088N06N3GBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 8.8mOhm @ 50A, 10V 4V @ 34µA 48 nC @ 10 V ±20V 3900 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R2K0C6ATMA1

IPD60R2K0C6ATMA1

MOSFET N-CH 600V 2.4A TO252-3

Infineon Technologies
2,357 -

RFQ

IPD60R2K0C6ATMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 2Ohm @ 760mA, 10V 3.5V @ 60µA 6.7 nC @ 10 V ±20V 140 pF @ 100 V - 22.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP65R190E6XKSA1

IPP65R190E6XKSA1

MOSFET N-CH 650V 20.2A TO220-3

Infineon Technologies
326 -

RFQ

IPP65R190E6XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R120P7XKSA1

IPP60R120P7XKSA1

MOSFET N-CH 600V 26A TO220-3

Infineon Technologies
1,307 -

RFQ

IPP60R120P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 120mOhm @ 8.2A, 10V 4V @ 410µA 36 nC @ 10 V ±20V 1544 pF @ 400 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R199CPXKSA1

IPP60R199CPXKSA1

MOSFET N-CH 650V 16A TO220-3

Infineon Technologies
412 -

RFQ

IPP60R199CPXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80N08S2L07AKSA1

IPP80N08S2L07AKSA1

MOSFET N-CH 75V 80A TO220-3

Infineon Technologies
565 -

RFQ

IPP80N08S2L07AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 4.5V, 10V 7.1mOhm @ 80A, 10V 2V @ 250µA 233 nC @ 10 V ±20V 5400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP21N50C3XKSA1

SPP21N50C3XKSA1

MOSFET N-CH 500V 21A TO220-3

Infineon Technologies
438 -

RFQ

SPP21N50C3XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 190mOhm @ 13.1A, 10V 3.9V @ 1mA 95 nC @ 10 V ±20V 2400 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPS60R800CEAKMA1

IPS60R800CEAKMA1

CONSUMER

Infineon Technologies
4,500 -

RFQ

IPS60R800CEAKMA1

Ficha técnica

Bulk,Tube * Not For New Designs - - - - - - - - - - - - - -
IPZ40N04S5L3R6ATMA1

IPZ40N04S5L3R6ATMA1

MOSFET_(20V 40V) PG-TSDSON-8

Infineon Technologies
2,354 -

RFQ

IPZ40N04S5L3R6ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 87A (Tj) 4.5V, 10V 3.6mOhm @ 20A, 10V 2V @ 21µA 32.8 nC @ 10 V ±16V 1966 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPZ40N04S53R9ATMA1

IPZ40N04S53R9ATMA1

MOSFET_(20V 40V) PG-TSDSON-8

Infineon Technologies
3,213 -

RFQ

IPZ40N04S53R9ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 40 V 89A (Tj) 7V, 10V 3.9mOhm @ 20A, 10V 3.4V @ 21µA 25 nC @ 10 V ±20V 1737 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9328TRPBF

IRF9328TRPBF

MOSFET P-CH 30V 12A 8SO

Infineon Technologies
3,003 -

RFQ

IRF9328TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 11.9mOhm @ 12A, 10V 2.4V @ 25µA 52 nC @ 10 V ±20V 1680 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7726TRPBF

IRF7726TRPBF

MOSFET P-CH 30V 7A MICRO8

Infineon Technologies
3,875 -

RFQ

IRF7726TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 26mOhm @ 7A, 10V 2.5V @ 250µA 69 nC @ 10 V ±20V 2204 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPU80R3K3P7AKMA1

IPU80R3K3P7AKMA1

MOSFET N-CH 800V 1.9A TO251-3

Infineon Technologies
3,000 -

RFQ

IPU80R3K3P7AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 1.9A (Tc) 10V 3.3Ohm @ 590mA, 10V 3.5V @ 30µA 5.8 nC @ 10 V ±20V 120 pF @ 500 V - 18W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPC95R750P7X7SA1

IPC95R750P7X7SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,728 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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