Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSL302SNH6327XTSA1

BSL302SNH6327XTSA1

MOSFET N-CH 30V 7.1A TSOP-6

Infineon Technologies
2,307 -

RFQ

BSL302SNH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.1A (Ta) 4.5V, 10V 25mOhm @ 7.1A, 10V 2V @ 30µA 6.6 nC @ 5 V ±20V 750 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPI072N10N3GXK

IPI072N10N3GXK

MOSFET N-CH 100V 80A TO262-3

Infineon Technologies
3,437 -

RFQ

Tube OptiMOS™ 3 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 7.2mOhm @ 80A, 10V 3.5V @ 90µA 68 nC @ 10 V ±20V 4910 pF @ 50 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU3636PBF

IRLU3636PBF

MOSFET N-CH 60V 50A IPAK

Infineon Technologies
7,195 -

RFQ

IRLU3636PBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC030N03MSGATMA1

BSC030N03MSGATMA1

MOSFET N-CH 30V 21A/100A TDSON

Infineon Technologies
152 -

RFQ

BSC030N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 100A (Tc) 4.5V, 10V 3mOhm @ 30A, 10V 2V @ 250µA 73 nC @ 10 V ±20V 5700 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6665TRPBF

IRF6665TRPBF

MOSFET N-CH 100V 4.2A DIRECTFET

Infineon Technologies
28,532 -

RFQ

IRF6665TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 4.2A (Ta), 19A (Tc) 10V 62mOhm @ 5A, 10V 5V @ 250µA 13 nC @ 10 V ±20V 530 pF @ 25 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SIHB33N60E-GE3

SIHB33N60E-GE3

MOSFET N-CH 600V D2PAK

Infineon Technologies
3,516 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
BSC0901NSIATMA1

BSC0901NSIATMA1

MOSFET N-CH 30V 28A/100A TDSON

Infineon Technologies
5,000 -

RFQ

BSC0901NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 30A, 10V 2.2V @ 250µA 20 nC @ 15 V ±20V 2600 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD25CN10NGATMA1

IPD25CN10NGATMA1

MOSFET N-CH 100V 35A TO252-3

Infineon Technologies
3,427 -

RFQ

IPD25CN10NGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 25mOhm @ 35A, 10V 4V @ 39µA 31 nC @ 10 V ±20V 2070 pF @ 50 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIPC03S2N03LX3MA1

SIPC03S2N03LX3MA1

LV POWER MOS

Infineon Technologies
2,649 -

RFQ

SIPC03S2N03LX3MA1

Ficha técnica

Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
BSC080N03LSGATMA1

BSC080N03LSGATMA1

MOSFET N-CH 30V 14A/53A TDSON

Infineon Technologies
2,761 -

RFQ

BSC080N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 53A (Tc) 4.5V, 10V 8mOhm @ 30A, 10V 2.2V @ 250µA 21 nC @ 10 V ±20V 1700 pF @ 15 V - 2.5W (Ta), 35W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD35N10S3L26ATMA1

IPD35N10S3L26ATMA1

MOSFET N-CH 100V 35A TO252-31

Infineon Technologies
22,334 -

RFQ

IPD35N10S3L26ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 4.5V, 10V 24mOhm @ 35A, 10V 2.4V @ 39µA 39 nC @ 10 V ±20V 2700 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ031NE2LS5ATMA1

BSZ031NE2LS5ATMA1

MOSFET N-CH 25V 19A/40A TSDSON

Infineon Technologies
5,000 -

RFQ

BSZ031NE2LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 40A (Tc) 4.5V, 10V 3.1mOhm @ 20A, 10V 2V @ 250µA 18.3 nC @ 10 V ±16V 1230 pF @ 12 V - 2.1W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPLU300N04S4R7XTMA2

IPLU300N04S4R7XTMA2

MOSFET N-CH 40V 300A 8HSOF

Infineon Technologies
2,562 -

RFQ

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 0.76mOhm @ 100A, 10V 4V @ 230µA 287 nC @ 10 V ±20V 22945 pF @ 25 V - 429W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPSA70R900P7SAKMA1

IPSA70R900P7SAKMA1

MOSFET N-CH 700V 6A TO251-3

Infineon Technologies
1,488 -

RFQ

IPSA70R900P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 400 V ±16V 211 pF @ 400 V - 30.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPS70R900P7SAKMA1

IPS70R900P7SAKMA1

MOSFET N-CH 700V 6A TO251-3

Infineon Technologies
1,107 -

RFQ

IPS70R900P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 10 V ±16V 211 pF @ 400 V - 30.5W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPU80R4K5P7AKMA1

IPU80R4K5P7AKMA1

MOSFET N-CH 800V 1.5A TO251-3

Infineon Technologies
2,122 -

RFQ

IPU80R4K5P7AKMA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 1.5A (Tc) 10V 4.5Ohm @ 400mA, 10V 3.5V @ 200µA 4 nC @ 10 V ±20V 250 pF @ 500 V Super Junction 13W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD80R600P7ATMA1

IPD80R600P7ATMA1

MOSFET N-CH 800V 8A TO252-3

Infineon Technologies
9,642 -

RFQ

IPD80R600P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 600mOhm @ 3.4A, 10V 3.5V @ 170µA 20 nC @ 10 V ±20V 570 pF @ 500 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC0803LSATMA1

BSC0803LSATMA1

MOSFET N-CH 100V 10A/44A TDSON-6

Infineon Technologies
4,745 -

RFQ

BSC0803LSATMA1

Ficha técnica

Cut Tape (CT) OptiMOS™ 5 Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 44A (Tc) 4.5V, 10V 14.6mOhm @ 22A, 10V 2.3V @ 23µA 10 nC @ 4.5 V ±20V 1300 pF @ 50 V - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH5007TRPBF

IRFH5007TRPBF

MOSFET N-CH 75V 17A/100A 8PQFN

Infineon Technologies
12,000 -

RFQ

IRFH5007TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 17A (Ta), 100A (Tc) 10V 5.9mOhm @ 50A, 10V 4V @ 150µA 98 nC @ 10 V ±20V 4290 pF @ 25 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPSA70R450P7SAKMA1

IPSA70R450P7SAKMA1

MOSFET N-CH 700V 10A TO251-3

Infineon Technologies
3,066 -

RFQ

IPSA70R450P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 10A (Tc) 10V 450mOhm @ 2.3A, 10V 3.5V @ 120µA 13.1 nC @ 400 V ±16V 424 pF @ 400 V - 50W (Tc) -40°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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