Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF6795MTRPBF

IRF6795MTRPBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies
4,800 -

RFQ

IRF6795MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.8mOhm @ 32A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 4280 pF @ 13 V - 2.8W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6775MTRPBF

IRF6775MTRPBF

MOSFET N-CH 150V 4.9A DIRECTFET

Infineon Technologies
15,331 -

RFQ

IRF6775MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 4.9A (Ta), 28A (Tc) 10V 56mOhm @ 5.6A, 10V 5V @ 100µA 36 nC @ 10 V ±20V 1411 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF40B207

IRF40B207

MOSFET N-CH 40V 95A TO220AB

Infineon Technologies
2,705 -

RFQ

IRF40B207

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 6V, 10V 4.5mOhm @ 57A, 10V 3.9V @ 50µA 68 nC @ 10 V ±20V 2110 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR5305TRL

AUIRFR5305TRL

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
23,481 -

RFQ

AUIRFR5305TRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD060N03LGBTMA1

IPD060N03LGBTMA1

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies
3,144 -

RFQ

IPD060N03LGBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.2V @ 250µA 30 nC @ 10 V ±20V 2300 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUZ40N06S5N105ATMA1

IAUZ40N06S5N105ATMA1

MOSFET_)40V 60V) PG-TSDSON-8

Infineon Technologies
2,001 -

RFQ

IAUZ40N06S5N105ATMA1

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tj) 7V, 10V 10.5mOhm @ 20A, 10V 3.4V @ 13µA 16.3 nC @ 10 V ±20V 1099 pF @ 30 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1

MOSFET N-CH 75V 19A/100A TDSON

Infineon Technologies
32,506 -

RFQ

BSC042NE7NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 19A (Ta), 100A (Tc) 10V 4.2mOhm @ 50A, 10V 3.8V @ 91µA 69 nC @ 10 V ±20V 4800 pF @ 37.5 V - 2.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL1404ZSTRLPBF

IRL1404ZSTRLPBF

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
7,675 -

RFQ

IRL1404ZSTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD60R210CFD7ATMA1

IPD60R210CFD7ATMA1

MOSFET N CH

Infineon Technologies
4,996 -

RFQ

IPD60R210CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6785MTRPBF

IRF6785MTRPBF

MOSFET N-CH 200V 3.4A DIRECTFET

Infineon Technologies
9,600 -

RFQ

IRF6785MTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 3.4A (Ta), 19A (Tc) 10V 100mOhm @ 4.2A, 10V 5V @ 100µA 36 nC @ 10 V ±20V 1500 pF @ 25 V - 2.8W (Ta), 57W (Tc) -40°C ~ 150°C (TJ) Surface Mount
ISP13DP06NMSATMA1

ISP13DP06NMSATMA1

MOSFET P-CH 60V SOT223

Infineon Technologies
3,291 -

RFQ

ISP13DP06NMSATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 2.8A (Ta) - - - - - - - - - Surface Mount
IRL7833PBF

IRL7833PBF

MOSFET N-CH 30V 150A TO220AB

Infineon Technologies
1,970 -

RFQ

IRL7833PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 150A (Tc) 4.5V, 10V 3.8mOhm @ 38A, 10V 2.3V @ 250µA 47 nC @ 4.5 V ±20V 4170 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1104PBF

IRF1104PBF

MOSFET N-CH 40V 100A TO220AB

Infineon Technologies
11,121 -

RFQ

IRF1104PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 9mOhm @ 60A, 10V 4V @ 250µA 93 nC @ 10 V ±20V 2900 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB60R190C6ATMA1

IPB60R190C6ATMA1

MOSFET N-CH 600V 20.2A D2PAK

Infineon Technologies
3,000 -

RFQ

IPB60R190C6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD60R145CFD7ATMA1

IPD60R145CFD7ATMA1

MOSFET N CH

Infineon Technologies
9,969 -

RFQ

IPD60R145CFD7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 145mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1330 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP032N06N3GXKSA1

IPP032N06N3GXKSA1

MOSFET N-CH 60V 120A TO220-3

Infineon Technologies
3,990 -

RFQ

IPP032N06N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.2mOhm @ 100A, 10V 4V @ 118µA 165 nC @ 10 V ±20V 13000 pF @ 30 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP057N08N3GXKSA1

IPP057N08N3GXKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies
1,473 -

RFQ

IPP057N08N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.7mOhm @ 80A, 10V 3.5V @ 90µA 69 nC @ 10 V ±20V 4750 pF @ 40 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP052N08N5AKSA1

IPP052N08N5AKSA1

MOSFET N-CH 80V 80A TO220-3

Infineon Technologies
3,760 -

RFQ

IPP052N08N5AKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 5.2mOhm @ 80A, 10V 3.8V @ 66µA 53 nC @ 10 V ±20V 3770 pF @ 40 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC057N03MSGATMA1

BSC057N03MSGATMA1

MOSFET N-CH 30V 15A/71A TDSON

Infineon Technologies
3,068 -

RFQ

BSC057N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 71A (Tc) 4.5V, 10V 5.7mOhm @ 30A, 10V 2V @ 250µA 40 nC @ 10 V ±16V 3100 pF @ 15 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISP25DP06NMXTSA1

ISP25DP06NMXTSA1

MOSFET P-CH 60V 1.9A SOT223-4

Infineon Technologies
3,941 -

RFQ

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 10V 250mOhm @ 1.9A, 10V 4V @ 270µA 10.8 nC @ 10 V ±20V 420 pF @ 30 V - 1.8W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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