Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA60R385CPXKSA1

IPA60R385CPXKSA1

MOSFET N-CH 600V 9A TO220-FP

Infineon Technologies
230 -

RFQ

IPA60R385CPXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R180P7XKSA1

IPA60R180P7XKSA1

MOSFET N-CHANNEL 650V 18A TO220

Infineon Technologies
1,500 -

RFQ

IPA60R180P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 26W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA80R360P7XKSA1

IPA80R360P7XKSA1

MOSFET N-CHANNEL 800V 13A TO220

Infineon Technologies
500 -

RFQ

IPA80R360P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 360mOhm @ 5.6A, 10V 3.5V @ 280µA 30 nC @ 10 V ±20V 930 pF @ 500 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPAN60R125PFD7SXKSA1

IPAN60R125PFD7SXKSA1

MOSFET N-CH 650V 25A TO220

Infineon Technologies
5,203 -

RFQ

Tube CoolMOS™PFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 25A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 32W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD40DP06NMATMA1

IPD40DP06NMATMA1

MOSFET P-CH 60V 4.3A TO252-3

Infineon Technologies
3,621 -

RFQ

IPD40DP06NMATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 4.3A (Tc) 10V 400mOhm @ 4.3A, 10V 4V @ 166µA 6.7 nC @ 10 V ±20V 260 pF @ 30 V - 19W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF100P218XKMA1

IRF100P218XKMA1

MOSFET N-CH 100V 209A TO247AC

Infineon Technologies
2,874 -

RFQ

IRF100P218XKMA1

Ficha técnica

Tube StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 209A (Tc) 6V, 10V 1.28mOhm @ 100A, 10V 3.8V @ 278µA 555 nC @ 10 V ±20V 25000 pF @ 50 V - 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF100P219XKMA1

IRF100P219XKMA1

MOSFET N-CH 100V TO247AC

Infineon Technologies
2,137 -

RFQ

IRF100P219XKMA1

Ficha técnica

Tube StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 203A (Tc) 6V, 10V 1.7mOhm @ 100A, 10V 3.8V @ 278µA 270 nC @ 10 V ±20V 12020 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF150P220XKMA1

IRF150P220XKMA1

MOSFET N-CH 150V 203A TO247-3

Infineon Technologies
2,067 -

RFQ

IRF150P220XKMA1

Ficha técnica

Tube StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 203A (Tc) 10V 2.7mOhm @ 100A, 10V 4.6V @ 265µA 200 nC @ 10 V ±20V 12000 pF @ 75 V - 556W (Tc) -55°C ~ 175°C Through Hole
IRF150P221XKMA1

IRF150P221XKMA1

MOSFET N-CH 150V 186A TO247-3

Infineon Technologies
3,921 -

RFQ

IRF150P221XKMA1

Ficha técnica

Tube StrongIRFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 186A (Tc) 10V 4.5mOhm @ 100A, 10V 4.6V @ 264µA 100 nC @ 10 V ±20V 6000 pF @ 75 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA60R280CFD7XKSA1

IPA60R280CFD7XKSA1

MOSFET N-CH 650V 6A TO220

Infineon Technologies
639 -

RFQ

IPA60R280CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 280mOhm @ 3.6A, 10V 4.5V @ 180µA 18 nC @ 10 V ±20V 807 pF @ 400 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPU60R1K0CEAKMA2

IPU60R1K0CEAKMA2

MOSFET N-CH 600V 4.3A TO251-3

Infineon Technologies
1,599 -

RFQ

IPU60R1K0CEAKMA2

Ficha técnica

Bulk,Tube CoolMOS™ CE Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 130µA 13 nC @ 10 V ±20V 280 pF @ 100 V - 61W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPA50R250CPXKSA1

IPA50R250CPXKSA1

MOSFET N-CH 500V 13A TO220-FP

Infineon Technologies
820 -

RFQ

IPA50R250CPXKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 250mOhm @ 7.8A, 10V 3.5V @ 520µA 36 nC @ 10 V ±20V 1420 pF @ 100 V Super Junction 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB3256PBF

IRFB3256PBF

MOSFET N-CH 60V 75A TO220AB

Infineon Technologies
314 -

RFQ

IRFB3256PBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 3.4mOhm @ 75A, 10V 4V @ 150µA 195 nC @ 10 V ±20V 6600 pF @ 48 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS60R1K0CEAKMA1

IPS60R1K0CEAKMA1

CONSUMER

Infineon Technologies
1,500 -

RFQ

IPS60R1K0CEAKMA1

Ficha técnica

Bulk,Tube * Not For New Designs - - - - - - - - - - - - - -
IPP60R210CFD7XKSA1

IPP60R210CFD7XKSA1

MOSFET N CH

Infineon Technologies
437 -

RFQ

IPP60R210CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 210mOhm @ 4.9A, 10V 4.5V @ 240µA 23 nC @ 10 V ±20V 1015 pF @ 400 V - 64W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC883N03LSGATMA1

BSC883N03LSGATMA1

MOSFET N-CH 34V 17A/98A TDSON

Infineon Technologies
3,643 -

RFQ

BSC883N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 34 V 17A (Ta), 98A (Tc) 4.5V, 10V 3.8mOhm @ 30A, 10V 2.2V @ 250µA 34 nC @ 10 V ±20V 2800 pF @ 15 V - 2.5W (Ta), 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD65R1K0CEAUMA1

IPD65R1K0CEAUMA1

MOSFET N-CH 650V 7.2A TO252-3

Infineon Technologies
3,230 -

RFQ

IPD65R1K0CEAUMA1

Ficha técnica

Tape & Reel (TR) CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 7.2A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V Super Junction 68W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0994NSATMA1

BSZ0994NSATMA1

MOSFET N-CH 30V 13A 8TSDSON-25

Infineon Technologies
3,256 -

RFQ

BSZ0994NSATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 7mOhm @ 5A, 10V 2V @ 250µA 7 nC @ 4.5 V ±20V 890 pF @ 15 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF3703PBF

IRF3703PBF

MOSFET N-CH 30V 210A TO220AB

Infineon Technologies
2,875 -

RFQ

IRF3703PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 210A (Tc) 7V, 10V 2.8mOhm @ 76A, 10V 4V @ 250µA 209 nC @ 10 V ±20V 8250 pF @ 25 V - 3.8W (Ta), 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2204SPBF

IRF2204SPBF

MOSFET N-CH 40V 170A D2PAK

Infineon Technologies
872 -

RFQ

IRF2204SPBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 10V 3.6mOhm @ 130A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 5890 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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