Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFU5505PBF

IRFU5505PBF

MOSFET P-CH 55V 18A IPAK

Infineon Technologies
3,311 -

RFQ

IRFU5505PBF

Ficha técnica

Bulk,Tube HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPW65R048CFDAFKSA1

IPW65R048CFDAFKSA1

MOSFET N-CH 650V 63.3A TO247-3

Infineon Technologies
221 -

RFQ

IPW65R048CFDAFKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 63.3A (Tc) 10V 48mOhm @ 29.4A, 10V 4.5V @ 2.9mA 270 nC @ 10 V ±20V 7440 pF @ 100 V - 500W (Tc) -40°C ~ 150°C (TJ) Through Hole
IGO60R070D1AUMA1

IGO60R070D1AUMA1

GANFET N-CH 600V 31A 20DSO

Infineon Technologies
1,405 -

RFQ

IGO60R070D1AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolGaN™ Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGOT60R070D1AUMA1

IGOT60R070D1AUMA1

GANFET N-CH 600V 31A 20DSO

Infineon Technologies
3,056 -

RFQ

IGOT60R070D1AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolGaN™ Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGT60R070D1ATMA1

IGT60R070D1ATMA1

GANFET N-CH 600V 31A 8HSOF

Infineon Technologies
3,207 -

RFQ

IGT60R070D1ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IGT60R190D1SATMA1

IGT60R190D1SATMA1

GANFET N-CH 600V 12.5A 8HSOF

Infineon Technologies
773 -

RFQ

IGT60R190D1SATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolGaN™ Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 12.5A (Tc) - - 1.6V @ 960µA - -10V 157 pF @ 400 V - 55.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPWS65R075CFD7AXKSA1

IPWS65R075CFD7AXKSA1

MOSFET N-CH 650V 32A TO247-3-41

Infineon Technologies
208 -

RFQ

IPWS65R075CFD7AXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 75mOhm @ 16.4A, 10V 4.5V @ 820µA 68 nC @ 10 V ±20V 3288 pF @ 400 V - 171W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPWS65R050CFD7AXKSA1

IPWS65R050CFD7AXKSA1

MOSFET N-CH 650V 45A TO247-3-41

Infineon Technologies
106 -

RFQ

IPWS65R050CFD7AXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 45A (Tc) 10V 50mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPW65R035CFD7AXKSA1

IPW65R035CFD7AXKSA1

MOSFET N-CH 650V 63A TO247-3-41

Infineon Technologies
239 -

RFQ

IPW65R035CFD7AXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolMOS™ CFD7A Active N-Channel MOSFET (Metal Oxide) 650 V 63A (Tc) 10V 35mOhm @ 35.8A, 10V 4.5V @ 1.79mA 145 nC @ 10 V ±20V 7149 pF @ 400 V - 305W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPD040N03LGBTMA1

IPD040N03LGBTMA1

MOSFET N-CH 30V 90A TO252-31

Infineon Technologies
3,825 -

RFQ

IPD040N03LGBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V ±20V 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC26N10S5L245ATMA1

IAUC26N10S5L245ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies
3,066 -

RFQ

IAUC26N10S5L245ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tj) 4.5V, 10V 24.5mOhm @ 13A, 10V 2.2V @ 13µA 12 nC @ 10 V ±20V 762 pF @ 50 V - 40W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6712STRPBF

IRF6712STRPBF

MOSFET N-CH 25V 17A DIRECTFET

Infineon Technologies
4,876 -

RFQ

IRF6712STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 68A (Tc) 4.5V, 10V 4.9mOhm @ 17A, 10V 2.4V @ 50µA 18 nC @ 4.5 V ±20V 1570 pF @ 13 V - 2.2W (Ta), 36W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC882N03LSGATMA1

BSC882N03LSGATMA1

MOSFET N-CH 34V 8TDSON

Infineon Technologies
3,443 -

RFQ

BSC882N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk - Last Time Buy N-Channel MOSFET (Metal Oxide) 34 V - 10V 4.2mOhm @ 30A, 10V 2.2V @ 250µA 46 nC @ 10 V ±20V 3700 pF @ 15 V - - -55°C ~ 150°C (TJ) Surface Mount
IPU80R2K4P7AKMA1

IPU80R2K4P7AKMA1

MOSFET N-CH 800V 2.5A TO251-3

Infineon Technologies
2,071 -

RFQ

IPU80R2K4P7AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 2.4Ohm @ 800mA, 10V 3.5V @ 40µA 7.5 nC @ 10 V ±20V 150 pF @ 500 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
IAUS300N08S5N014ATMA1

IAUS300N08S5N014ATMA1

MOSFET N-CH 80V 300A HSOG-8

Infineon Technologies
2,709 -

RFQ

IAUS300N08S5N014ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 80 V 300A (Tc) 6V, 10V 1.4mOhm @ 100A, 10V 3.8V @ 230µA 187 nC @ 10 V ±20V 13178 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IGLD60R070D1AUMA1

IGLD60R070D1AUMA1

GANFET N-CH 600V 15A LSON-8

Infineon Technologies
2,719 -

RFQ

IGLD60R070D1AUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolGaN™ Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 15A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD350N06LGBUMA1

IPD350N06LGBUMA1

MOSFET N-CH 60V 29A TO252-3

Infineon Technologies
2,706 -

RFQ

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 29A (Tc) 4.5V, 10V 35mOhm @ 29A, 10V 2V @ 28µA 13 nC @ 5 V ±20V 800 pF @ 30 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD80R2K0P7ATMA1

IPD80R2K0P7ATMA1

MOSFET N-CH 800V 3A TO252-3

Infineon Technologies
2,000 -

RFQ

IPD80R2K0P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 2Ohm @ 940mA, 10V 3.5V @ 50µA 9 nC @ 10 V ±20V 175 pF @ 500 V - 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPU80R1K4P7AKMA1

IPU80R1K4P7AKMA1

MOSFET N-CH 800V 4A TO251-3

Infineon Technologies
1,455 -

RFQ

IPU80R1K4P7AKMA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.4Ohm @ 1.4A, 10V 3.5V @ 700µA 10.05 nC @ 10 V ±20V 250 pF @ 500 V Super Junction 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF6662TRPBF

IRF6662TRPBF

MOSFET N-CH 100V 8.3A DIRECTFET

Infineon Technologies
7,560 -

RFQ

IRF6662TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 8.3A (Ta), 47A (Tc) 10V 22mOhm @ 8.2A, 10V 4.9V @ 100µA 31 nC @ 10 V ±20V 1360 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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