Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPP04N80C3XK

SPP04N80C3XK

MOSFET N-CH 800V 4A TO220-3

Infineon Technologies
3,360 -

RFQ

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2.5A, 10V 3.9V @ 240µA 31 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP06N80C3XK

SPP06N80C3XK

MOSFET N-CH 800V 6A TO220-3

Infineon Technologies
2,188 -

RFQ

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP08N80C3XK

SPP08N80C3XK

MOSFET N-CH 800V 8A TO220-3

Infineon Technologies
2,861 -

RFQ

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 650mOhm @ 5.1A, 10V 3.9V @ 470µA 60 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP80N06S08NK

SPP80N06S08NK

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
2,489 -

RFQ

Tube Automotive, AEC-Q101, SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 8mOhm @ 80A, 10V 4V @ 240µA 187 nC @ 10 V ±20V 3660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R045C7300XKSA1

IPW65R045C7300XKSA1

MOSFET N-CH 650V 46A TO247

Infineon Technologies
3,888 -

RFQ

Tube CoolMOS™ C7 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 46A (Tc) 10V 45mOhm @ 24.9A, 10V 4V @ 1.25mA 93 nC @ 10 V ±20V 4340 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSC0996NSATMA1

BSC0996NSATMA1

MOSFET N-CH 34V 13A TDSON-8-5

Infineon Technologies
2,045 -

RFQ

BSC0996NSATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 34 V 13A (Ta) 4.5V, 10V 9mOhm @ 8A, 10V 2V @ 250µA 20 nC @ 10 V ±20V 1500 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD50R2K0CEAUMA1

IPD50R2K0CEAUMA1

MOSFET N-CH 500V 2.4A TO252-3

Infineon Technologies
2,500 -

RFQ

IPD50R2K0CEAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 13V 2Ohm @ 600mA, 13V 3.5V @ 50µA 6 nC @ 10 V ±20V 124 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC0909NSATMA1

BSC0909NSATMA1

MOSFET N-CH 34V 12A/44A TDSON

Infineon Technologies
9,772 -

RFQ

BSC0909NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 34 V 12A (Ta), 44A (Tc) 4.5V, 10V 9.2mOhm @ 20A, 10V 2V @ 250µA 15 nC @ 10 V ±20V 1110 pF @ 15 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP320SH6433XTMA1

BSP320SH6433XTMA1

MOSFET N-CH 60V 2.9A SOT223

Infineon Technologies
2,789 -

RFQ

BSP320SH6433XTMA1

Ficha técnica

Tape & Reel (TR),Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 60 V 2.9A (Tj) 10V 120mOhm @ 2.9A, 10V 4V @ 20µA 9.3 nC @ 7 V ±20V 340 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD075N03LGBTMA1

IPD075N03LGBTMA1

MOSFET N-CH 30V 50A TO252-31

Infineon Technologies
2,084 -

RFQ

IPD075N03LGBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1900 pF @ 15 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD25N06S4L30ATMA2

IPD25N06S4L30ATMA2

MOSFET N-CH 60V 25A TO252-31

Infineon Technologies
5,653 -

RFQ

IPD25N06S4L30ATMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 4.5V, 10V 30mOhm @ 25A, 10V 2.2V @ 8µA 16.3 nC @ 10 V ±16V 1220 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR024NTRLPBF

IRFR024NTRLPBF

MOSFET N-CH 55V 17A DPAK

Infineon Technologies
5,765 -

RFQ

IRFR024NTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0909NSATMA1

BSZ0909NSATMA1

MOSFET N-CH 34V 9A/36A 8TSDSON

Infineon Technologies
54,990 -

RFQ

BSZ0909NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 34 V 9A (Ta), 36A (Tc) 4.5V, 10V 12mOhm @ 20A, 10V 2V @ 250µA 17 nC @ 10 V ±20V 1310 pF @ 15 V - 2.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD08P06PGBTMA1

SPD08P06PGBTMA1

MOSFET P-CH 60V 8.83A TO252-3

Infineon Technologies
1,355 -

RFQ

SPD08P06PGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 8.83A (Ta) 6.2V 300mOhm @ 10A, 6.2V 4V @ 250µA 13 nC @ 10 V ±20V 420 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC097N06NSATMA1

BSC097N06NSATMA1

MOSFET N-CH 60V 46A TDSON-8-6

Infineon Technologies
39,720 -

RFQ

BSC097N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 46A (Tc) 6V, 10V 9.7mOhm @ 40A, 10V 3.3V @ 14µA 15 nC @ 10 V ±20V 1075 pF @ 30 V - 2.5W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLHM620TRPBF

IRLHM620TRPBF

MOSFET N-CH 20V 26A/40A PQFN

Infineon Technologies
29,875 -

RFQ

IRLHM620TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 26A (Ta), 40A (Tc) 2.5V, 10V 2.5mOhm @ 20A, 4.5V 1.1V @ 50µA 78 nC @ 4.5 V ±12V 3620 pF @ 10 V - 2.7W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSZ0589NSATMA1

BSZ0589NSATMA1

MOSFET N-CH 30V 17A TSDSON

Infineon Technologies
10,000 -

RFQ

BSZ0589NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 4.4mOhm @ 8A, 10V 2V @ 250µA 15 nC @ 10 V ±20V 950 pF @ 15 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD5N25S3430ATMA1

IPD5N25S3430ATMA1

MOSFET N-CH 250V 5A TO252-3

Infineon Technologies
2,500 -

RFQ

IPD5N25S3430ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 250 V 5A (Tc) 10V 430mOhm @ 5A, 10V 4V @ 13µA 6.2 nC @ 10 V ±20V 422 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2804STRLPBF

IRF2804STRLPBF

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
2,799 -

RFQ

IRF2804STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB65R190C7ATMA1

IPB65R190C7ATMA1

MOSFET N-CH 650V 13A D2PAK

Infineon Technologies
2,944 -

RFQ

IPB65R190C7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ C7 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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