Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPS80R2K4P7AKMA1

IPS80R2K4P7AKMA1

MOSFET N-CH 800V 2.5A TO251-3

Infineon Technologies
53,945 -

RFQ

IPS80R2K4P7AKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 2.4Ohm @ 800mA, 10V 3.5V @ 40µA 7.5 nC @ 10 V ±20V 150 pF @ 500 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSZ0945NDXTMA1

BSZ0945NDXTMA1

TRENCH <= 40V

Infineon Technologies
3,957 -

RFQ

Tape & Reel (TR) - Discontinued at Mosen - - - - - - - - - - - - - -
IPB06P001LATMA1

IPB06P001LATMA1

MOSFET P-CH 60V 100A TO263-3

Infineon Technologies
2,293 -

RFQ

IPB06P001LATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 11mOhm @ 100A, 10V 2V @ 5.55mA 281 nC @ 10 V ±20V 8500 pF @ 30 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD06P002NATMA1

IPD06P002NATMA1

MOSFET P-CH 60V 35A TO252-3

Infineon Technologies
3,596 -

RFQ

IPD06P002NATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 10V 38mOhm @ 35A, 10V 4V @ 1.7mA 63 nC @ 10 V ±20V 2500 pF @ 30 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD06P003NATMA1

IPD06P003NATMA1

MOSFET P-CH 60V 22A TO252-3

Infineon Technologies
3,100 -

RFQ

IPD06P003NATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 60 V 22A (Tc) 10V 65mOhm @ 22A, 10V 4V @ 1.04mA 39 nC @ 10 V ±20V 1600 pF @ 30 V - 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD06P004NATMA1

IPD06P004NATMA1

MOSFET P-CH 60V 16.4A TO252-3

Infineon Technologies
2,713 -

RFQ

IPD06P004NATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 60 V 16.4A (Tc) 10V 90mOhm @ 16.4A, 10V 4V @ 710µA 27 nC @ 10 V ±20V 1100 pF @ 30 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD06P005LATMA1

IPD06P005LATMA1

MOSFET P-CH 60V 6.5A TO252-3

Infineon Technologies
2,265 -

RFQ

IPD06P005LATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 60 V 6.5A (Tc) 4.5V, 10V 250mOhm @ 6.5A, 10V 2V @ 270µA 13.8 nC @ 10 V ±20V 420 pF @ 30 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD06P005NATMA1

IPD06P005NATMA1

MOSFET P-CH 60V 6.5A TO252-3

Infineon Technologies
3,186 -

RFQ

IPD06P005NATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 60 V 6.5A (Tc) 10V 250mOhm @ 6.5A, 10V 4V @ 270µA 10.6 nC @ 10 V ±20V 420 pF @ 30 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD06P007NATMA1

IPD06P007NATMA1

MOSFET P-CH 60V 4.3A TO252-3

Infineon Technologies
3,135 -

RFQ

IPD06P007NATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 60 V 4.3A (Tc) 10V 400mOhm @ 4.3A, 10V 4V @ 166µA 6.7 nC @ 10 V ±20V 260 pF @ 30 V - 19W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPL65R340CFDAUMA2

IPL65R340CFDAUMA2

MOSFET N-CH 650V 10.9A 4VSON

Infineon Technologies
2,117 -

RFQ

IPL65R340CFDAUMA2

Ficha técnica

Tape & Reel (TR) CoolMOS™ CFD2 Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 10.9A (Tc) 10V 340mOhm @ 4.4A, 10V 4.5V @ 400µA 41 nC @ 10 V ±20V 1100 pF @ 100 V - 104.2W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFP22N50APBFXKMA1

IRFP22N50APBFXKMA1

MOSFET N-CH 500V 22A TO247AC

Infineon Technologies
3,182 -

RFQ

IRFP22N50APBFXKMA1

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 230mOhm @ 13A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 3450 pF @ 25 V - 277W (Tc) -55°C ~ 150°C (TJ) Through Hole
ISP06P003NXTSA1

ISP06P003NXTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
3,556 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
ISP06P005LXTSA1

ISP06P005LXTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
2,234 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
ISP06P005NXTSA1

ISP06P005NXTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
2,501 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
ISP06P008NXTSA1

ISP06P008NXTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
3,805 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
ISP06P009LXTSA1

ISP06P009LXTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
3,523 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
ISS06P010LXTSA1

ISS06P010LXTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
2,197 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
ISS06P011LXTSA1

ISS06P011LXTSA1

SMALL SIGNAL MOSFETS

Infineon Technologies
2,417 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
IRF840PBF

IRF840PBF

MOSFET N-CH 500V 8A TO220AB

Infineon Technologies
3,495 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB11N50APBF

IRFB11N50APBF

MOSFET N-CH 500V 11A TO220AB

Infineon Technologies
2,223 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
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15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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