Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP90R500C3

IPP90R500C3

MOSFET N-CH 900V 11A TO220-3

Infineon Technologies
3,170 -

RFQ

IPP90R500C3

Ficha técnica

Bulk,Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI08N80C3

SPI08N80C3

MOSFET N-CH 800V 8A TO262-3

Infineon Technologies
24,755 -

RFQ

SPI08N80C3

Ficha técnica

Bulk,Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 650mOhm @ 5.1A, 10V 3.9V @ 470µA 60 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPS03N60C3

SPS03N60C3

MOSFET N-CH 600V 3.2A TO251-3

Infineon Technologies
3,127 -

RFQ

SPS03N60C3

Ficha técnica

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW120R090M1HXKSA1

IMW120R090M1HXKSA1

SICFET N-CH 1.2KV 26A TO247-3

Infineon Technologies
370 -

RFQ

IMW120R090M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 15V, 18V 117mOhm @ 8.5A, 18V 5.7V @ 3.7mA 21 nC @ 18 V +23V, -7V 707 pF @ 800 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP65R041CFD7XKSA1

IPP65R041CFD7XKSA1

650V FET COOLMOS TO247

Infineon Technologies
144 -

RFQ

IPP65R041CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 50A (Tc) 10V 41mOhm @ 24.8A, 10V 4.5V @ 1.24mA 102 nC @ 10 V ±20V 4975 pF @ 400 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZ120R090M1HXKSA1

IMZ120R090M1HXKSA1

SICFET N-CH 1.2KV 26A TO247-4

Infineon Technologies
355 -

RFQ

IMZ120R090M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 26A (Tc) 15V, 18V 117mOhm @ 8.5A, 18V 5.7V @ 3.7mA 21 nC @ 18 V +23V, -7V 707 pF @ 800 V - 115W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISP25DP06LMSATMA1

ISP25DP06LMSATMA1

MOSFET P-CH 60V 1.9A SOT223

Infineon Technologies
2,293 -

RFQ

ISP25DP06LMSATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) 4.5V, 10V 250mOhm @ 1.9A, 10V 2V @ 270µA 13.9 nC @ 10 V ±20V 420 pF @ 30 V - 1.8W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMW65R027M1HXKSA1

IMW65R027M1HXKSA1

MOSFET 650V NCH SIC TRENCH

Infineon Technologies
136 -

RFQ

Tube - Active - - - 47A (Tc) - - - - - - - - - -
IPW60R017C7XKSA1

IPW60R017C7XKSA1

HIGH POWER_NEW

Infineon Technologies
224 -

RFQ

IPW60R017C7XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 109A (Tc) 10V 17mOhm @ 58.2A, 10V 4V @ 2.91mA 240 nC @ 10 V ±20V 9890 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7601TRPBF

IRF7601TRPBF

MOSFET N-CH 20V 5.7A MICRO8

Infineon Technologies
2,066 -

RFQ

IRF7601TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 20 V 5.7A (Ta) 2.7V, 4.5V 35mOhm @ 3.8A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 650 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR8256TRPBF

IRLR8256TRPBF

MOSFET N-CH 25V 81A DPAK

Infineon Technologies
3,458 -

RFQ

IRLR8256TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 25 V 81A (Tc) 4.5V, 10V 5.7mOhm @ 25A, 10V 2.35V @ 25µA 15 nC @ 4.5 V ±20V 1470 pF @ 13 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN65R1K5CEATMA1

IPN65R1K5CEATMA1

MOSFET N-CH 650V 5.2A SOT223

Infineon Technologies
3,498 -

RFQ

IPN65R1K5CEATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ CE Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 5.2A (Tc) 10V 1.5Ohm @ 1A, 10V 3.5V @ 100µA 10.5 nC @ 10 V ±20V 225 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUXGMFR120ZTRL

AUXGMFR120ZTRL

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
3,732 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
IPU60R1K5CEAKMA2

IPU60R1K5CEAKMA2

MOSFET N-CH 600V 3.1A TO251-3

Infineon Technologies
2,479 -

RFQ

IPU60R1K5CEAKMA2

Ficha técnica

Bulk,Tube CoolMOS™ CE Active N-Channel MOSFET (Metal Oxide) 600 V 3.1A (Tc) 10V 1.5Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 49W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPS60R1K5CEAKMA1

IPS60R1K5CEAKMA1

CONSUMER

Infineon Technologies
3,095 -

RFQ

IPS60R1K5CEAKMA1

Ficha técnica

Tube * Not For New Designs - - - - - - - - - - - - - -
IRF9333TRPBF

IRF9333TRPBF

MOSFET P-CH 30V 9.2A 8SO

Infineon Technologies
3,210 -

RFQ

IRF9333TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 9.2A (Ta) 4.5V, 10V 19.4mOhm @ 9.2A, 10V 2.4V @ 25µA 38 nC @ 10 V ±20V 1110 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPSA70R1K4P7SAKMA1

IPSA70R1K4P7SAKMA1

MOSFET N-CH 700V 4A TO251-3

Infineon Technologies
18,000 -

RFQ

IPSA70R1K4P7SAKMA1

Ficha técnica

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 4A (Tc) 10V 1.4Ohm @ 700mA, 10V 3.5V @ 40µA 4.7 nC @ 400 V ±16V 158 pF @ 400 V - 22.7W (Tc) -40°C ~ 150°C (TJ) Through Hole
SPD50P03LGXT

SPD50P03LGXT

MOSFET P-CH 30V 50A TO252-5

Infineon Technologies
2,113 -

RFQ

Tape & Reel (TR) OptiMOS®-P Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7mOhm @ 50A, 10V 2V @ 250µA 126 nC @ 10 V ±20V 6880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI045N10N3GXK

IPI045N10N3GXK

MOSFET N-CH 100V 137A TO262-3

Infineon Technologies
2,775 -

RFQ

Tube OptiMOS™ 3 Obsolete N-Channel MOSFET (Metal Oxide) 100 V 137A (Tc) 6V, 10V 4.5mOhm @ 100A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP023NE7N3G

IPP023NE7N3G

MOSFET N-CH 75V 120A TO220-3

Infineon Technologies
3,537 -

RFQ

IPP023NE7N3G

Ficha técnica

Tube OptiMOS™ 3 Obsolete N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V ±20V 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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