Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPC60R380E6UNSAWNX6SA1

IPC60R380E6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,800 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPC60R380E6X7SA1

IPC60R380E6X7SA1

MOSFET N-CH

Infineon Technologies
3,792 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPC60R520E6UNSAWNX6SA1

IPC60R520E6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,559 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPC60R600E6UNSAWNX6SA1

IPC60R600E6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies
2,423 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPD135N03LGBTMA1

IPD135N03LGBTMA1

LV POWER MOS

Infineon Technologies
2,097 -

RFQ

IPD135N03LGBTMA1

Ficha técnica

Tape & Reel (TR) * Not For New Designs - - - - - - - - - - - - - -
IPC60R950C6UNSAWNX6SA1

IPC60R950C6UNSAWNX6SA1

MOSFET N-CH BARE DIE

Infineon Technologies
3,435 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
IPS50R520CPAKMA1

IPS50R520CPAKMA1

MOSFET N-CH 500V 7.1A TO251-3

Infineon Technologies
3,906 -

RFQ

IPS50R520CPAKMA1

Ficha técnica

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPS70R2K0CEE8211

IPS70R2K0CEE8211

MOSFET N-CH

Infineon Technologies
3,226 -

RFQ

IPS70R2K0CEE8211

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
SPW20N60C3E8177FKSA1

SPW20N60C3E8177FKSA1

MOSFET N-CH

Infineon Technologies
240,092 -

RFQ

Bulk,Bulk - Obsolete - - - - - - - - - - - - - -
SS05N70AKMA1

SS05N70AKMA1

MOSFET N-CH

Infineon Technologies
2,412 -

RFQ

Bulk - Obsolete - - - - - - - - - - - - - -
SS07N70AKMA1

SS07N70AKMA1

MOSFET N-CH

Infineon Technologies
63,000 -

RFQ

Bulk,Bulk - Obsolete - - - - - - - - - - - - - -
IRF300P227

IRF300P227

MOSFET N-CH 300V 50A TO247AC

Infineon Technologies
144 -

RFQ

IRF300P227

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 50A (Tc) 10V 40mOhm @ 30A, 10V 4V @ 270µA 107 nC @ 10 V ±20V 4893 pF @ 50 V - 313W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R070CFD7XKSA1

IPW60R070CFD7XKSA1

MOSFET N-CH 650V 31A TO247-3

Infineon Technologies
877 -

RFQ

IPW60R070CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 70mOhm @ 15.1A, 10V 4.5V @ 760µA 67 nC @ 10 V ±20V 2721 pF @ 400 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMW120R350M1HXKSA1

IMW120R350M1HXKSA1

SICFET N-CH 1.2KV 4.7A TO247-3

Infineon Technologies
101 -

RFQ

IMW120R350M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 4.7A (Tc) 15V, 18V 455mOhm @ 2A, 18V 5.7V @ 1mA 5.3 nC @ 18 V +23V, -7V 182 pF @ 800 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC079N03LSCGATMA1

BSC079N03LSCGATMA1

MOSFET N-CH 30V 14A/50A TDSON

Infineon Technologies
3,308 -

RFQ

BSC079N03LSCGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 50A (Tc) 4.5V, 10V 7.9mOhm @ 30A, 10V 2.2V @ 250µA 19 nC @ 10 V ±20V 1600 pF @ 15 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IMW120R220M1HXKSA1

IMW120R220M1HXKSA1

SICFET N-CH 1.2KV 13A TO247-3

Infineon Technologies
210 -

RFQ

IMW120R220M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 13A (Tc) 15V, 18V 286mOhm @ 4A, 18V 5.7V @ 1.6mA 8.5 nC @ 18 V +23V, -7V 289 pF @ 800 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R060C7XKSA1

IPP60R060C7XKSA1

MOSFET N-CH 600V 35A TO220-3

Infineon Technologies
347 -

RFQ

IPP60R060C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 60mOhm @ 15.9A, 10V 4V @ 800µA 68 nC @ 10 V ±20V 2850 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPD04N60C3

SPD04N60C3

MOSFET N-CH 600V 4.5A TO252-3

Infineon Technologies
2,383 -

RFQ

SPD04N60C3

Ficha técnica

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD07N60C3

SPD07N60C3

MOSFET N-CH 600V 7.3A TO252-3

Infineon Technologies
2,678 -

RFQ

SPD07N60C3

Ficha técnica

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPI90R800C3

IPI90R800C3

MOSFET N-CH 900V 6.9A TO262-3

Infineon Technologies
2,241 -

RFQ

IPI90R800C3

Ficha técnica

Bulk,Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 900 V 6.9A (Tc) 10V 800mOhm @ 4.1A, 10V 3.5V @ 460µA 42 nC @ 10 V ±20V 1100 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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