Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB4228PBF

IRFB4228PBF

MOSFET N-CH 150V 83A TO220AB

Infineon Technologies
745 -

RFQ

IRFB4228PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 83A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 107 nC @ 10 V ±30V 4530 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRFB3004PBF

IRFB3004PBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
1,807 -

RFQ

IRFB3004PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.75mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW90R500C3XKSA1

IPW90R500C3XKSA1

MOSFET N-CH 900V 11A TO247-3

Infineon Technologies
1,155 -

RFQ

IPW90R500C3XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 900 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 3.5V @ 740µA 68 nC @ 10 V ±20V 1700 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R099P7XKSA1

IPP60R099P7XKSA1

MOSFET N-CH 600V 31A TO220-3

Infineon Technologies
828 -

RFQ

IPP60R099P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 117W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPD640N06LGBTMA1

IPD640N06LGBTMA1

MOSFET N-CH 60V 18A TO252-3

Infineon Technologies
2,156 -

RFQ

IPD640N06LGBTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 64mOhm @ 18A, 10V 2V @ 16µA 13 nC @ 10 V ±20V 470 pF @ 30 V - 47W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPN70R2K1CEATMA1

IPN70R2K1CEATMA1

MOSFET N-CHANNEL 750V 4A SOT223

Infineon Technologies
2,481 -

RFQ

IPN70R2K1CEATMA1

Ficha técnica

Tape & Reel (TR) - Not For New Designs N-Channel MOSFET (Metal Oxide) 750 V 4A (Tc) 10V 2.1Ohm @ 1A, 10V 3.5V @ 70µA 7.8 nC @ 10 V ±20V 163 pF @ 100 V - 5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD50R950CEAUMA1

IPD50R950CEAUMA1

CONSUMER

Infineon Technologies
3,939 -

RFQ

IPD50R950CEAUMA1

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IRFP4004PBF

IRFP4004PBF

MOSFET N-CH 40V 195A TO247AC

Infineon Technologies
917 -

RFQ

IRFP4004PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.7mOhm @ 195A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 8920 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP026N10NF2SAKMA1

IPP026N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies
1,448 -

RFQ

IPP026N10NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Ta), 184A (Tc) 6V, 10V 2.6mOhm @ 100A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP075N15N3GXKSA1

IPP075N15N3GXKSA1

MOSFET N-CH 150V 100A TO220-3

Infineon Technologies
979 -

RFQ

IPP075N15N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 8V, 10V 7.5mOhm @ 100A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 5470 pF @ 75 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP20N60S5XKSA1

SPP20N60S5XKSA1

HIGH POWER_LEGACY

Infineon Technologies
1,496 -

RFQ

SPP20N60S5XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP030N10N3GXKSA1

IPP030N10N3GXKSA1

MOSFET N-CH 100V 100A TO220-3

Infineon Technologies
2,911 -

RFQ

IPP030N10N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 6V, 10V 3mOhm @ 100A, 10V 3.5V @ 275µA 206 nC @ 10 V ±20V 14800 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R095C7XKSA1

IPW65R095C7XKSA1

MOSFET N-CH 650V 24A TO247

Infineon Technologies
1,420 -

RFQ

IPW65R095C7XKSA1

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 95mOhm @ 11.8A, 10V 4V @ 590µA 45 nC @ 10 V ±20V 2140 pF @ 400 V - 128W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA075N15N3GXKSA1

IPA075N15N3GXKSA1

MOSFET N-CH 150V 43A TO220-3

Infineon Technologies
2,733 -

RFQ

IPA075N15N3GXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 8V, 10V 7.5mOhm @ 43A, 10V 4V @ 270µA 93 nC @ 10 V ±20V 7280 pF @ 75 V - 39W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80N07S405AKSA1

IPP80N07S405AKSA1

MOSFET N-CH TO220-3

Infineon Technologies
3,953 -

RFQ

Tube - Active - - - 80A (Tc) - - - - - - - - - -
IPI120N04S4-01M

IPI120N04S4-01M

MOSFET N-CH TO262-3

Infineon Technologies
3,192 -

RFQ

IPI120N04S4-01M

Ficha técnica

Tube - Obsolete - - - - - - - - - - - - - -
IPI80N07S405AKSA1

IPI80N07S405AKSA1

MOSFET N-CH TO262-3

Infineon Technologies
11,000 -

RFQ

IPI80N07S405AKSA1

Ficha técnica

Tube,Tube - Obsolete - - - 80A (Tc) - - - - - - - - - -
IPS70N10S3L-12

IPS70N10S3L-12

MOSFET N-CH 1TO251-3

Infineon Technologies
2,100 -

RFQ

Tube - Obsolete - - - - - - - - - - - - - -
AUXHMF1404ZSTRL

AUXHMF1404ZSTRL

MOSFET N-CH TO263-3

Infineon Technologies
2,925 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
BSP615S2LHUMA1

BSP615S2LHUMA1

MOSFET SOT223-4

Infineon Technologies
2,323 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
Total 8399 Record«Prev1... 310311312313314315316317...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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