Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ISP26DP06NMSATMA1

ISP26DP06NMSATMA1

MOSFET P-CH 60V SOT223

Infineon Technologies
2,329 -

RFQ

Tape & Reel (TR) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 1.9A (Ta) - - - - - - - - - Surface Mount
IRFB5620PBF

IRFB5620PBF

MOSFET N-CH 200V 25A TO220AB

Infineon Technologies
2,383 -

RFQ

IRFB5620PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Tc) 10V 72.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI4227PBF

IRFI4227PBF

MOSFET N-CH 200V 26A TO220AB FP

Infineon Technologies
12,445 -

RFQ

IRFI4227PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 26A (Tc) 10V 25mOhm @ 17A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4600 pF @ 25 V - 46W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF2907ZPBF

IRF2907ZPBF

MOSFET N-CH 75V 160A TO220AB

Infineon Technologies
900 -

RFQ

IRF2907ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 160A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2804PBF

IRF2804PBF

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies
11,442 -

RFQ

IRF2804PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2.3mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP1405PBF

IRFP1405PBF

MOSFET N-CH 55V 95A TO247AC

Infineon Technologies
8,206 -

RFQ

IRFP1405PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5.3mOhm @ 95A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB80N08S2L07ATMA1

IPB80N08S2L07ATMA1

MOSFET N-CH 75V 80A TO263-3

Infineon Technologies
5,725 -

RFQ

IPB80N08S2L07ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 4.5V, 10V 6.8mOhm @ 80A, 10V 2V @ 250µA 233 nC @ 10 V ±20V 5400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPA11N80C3XKSA2

SPA11N80C3XKSA2

MOSFET N-CH 800V 11A TO220-3

Infineon Technologies
301 -

RFQ

SPA11N80C3XKSA2

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 450mOhm @ 7.1A, 10V 3.9V @ 680µA 85 nC @ 10 V ±20V 1600 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4321PBF

IRFB4321PBF

MOSFET N-CH 150V 85A TO220AB

Infineon Technologies
2,260 -

RFQ

IRFB4321PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 50 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R160P7XKSA1

IPP60R160P7XKSA1

MOSFET N-CH 650V 20A TO220-3-1

Infineon Technologies
3,137 -

RFQ

IPP60R160P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 160mOhm @ 6.3A, 10V 4V @ 350µA 31 nC @ 10 V ±20V 1317 pF @ 400 V - 81W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80N06S2L07AKSA2

IPP80N06S2L07AKSA2

MOSFET N-CH 55V 80A TO220-3

Infineon Technologies
789 -

RFQ

IPP80N06S2L07AKSA2

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 2V @ 150µA 130 nC @ 10 V ±20V 3160 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP3415PBF

IRFP3415PBF

MOSFET N-CH 150V 43A TO247AC

Infineon Technologies
3,428 -

RFQ

IRFP3415PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI4321PBF

IRFI4321PBF

MOSFET N-CH 150V 34A TO220AB FP

Infineon Technologies
15,061 -

RFQ

IRFI4321PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 34A (Tc) 10V 16mOhm @ 20A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4440 pF @ 50 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI4229PBF

IRFI4229PBF

MOSFET N-CH 250V 19A TO220AB

Infineon Technologies
4,452 -

RFQ

IRFI4229PBF

Ficha técnica

Tube HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 250 V 19A (Tc) 10V 46mOhm @ 11A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4480 pF @ 25 V - 46W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRF7607TRPBF

IRF7607TRPBF

MOSFET N-CH 20V 6.5A MICRO8

Infineon Technologies
2,200 -

RFQ

IRF7607TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF6721STRPBF

IRF6721STRPBF

MOSFET N-CH 30V 14A DIRECTFET

Infineon Technologies
2,715 -

RFQ

IRF6721STRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 60A (Tc) 4.5V, 10V 7.3mOhm @ 14A, 10V 2.4V @ 25µA 17 nC @ 4.5 V ±20V 1430 pF @ 15 V - 2.2W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRLR024ZTRL

AUIRLR024ZTRL

MOSFET N CH 55V 16A DPAK

Infineon Technologies
2,849 -

RFQ

AUIRLR024ZTRL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB3034PBF

IRLB3034PBF

MOSFET N-CH 40V 195A TO220AB

Infineon Technologies
1,353 -

RFQ

IRLB3034PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 4.5V, 10V 1.7mOhm @ 195A, 10V 2.5V @ 250µA 162 nC @ 4.5 V ±20V 10315 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3205

AUIRF3205

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
560 -

RFQ

AUIRF3205

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB3006PBF

IRFB3006PBF

MOSFET N-CH 60V 195A TO220AB

Infineon Technologies
2,047 -

RFQ

IRFB3006PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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