Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFB3306PBF

IRFB3306PBF

MOSFET N-CH 60V 120A TO220AB

Infineon Technologies
11,574 -

RFQ

IRFB3306PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC036NE7NS3GATMA1

BSC036NE7NS3GATMA1

MOSFET N-CH 75V 100A TDSON

Infineon Technologies
8,209 -

RFQ

BSC036NE7NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 3.6mOhm @ 50A, 10V 3.8V @ 110µA 63.4 nC @ 10 V ±20V 4400 pF @ 37.5 V - 2.5W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP150MPBF

IRFP150MPBF

MOSFET N-CH 100V 42A TO247AC

Infineon Technologies
1,262 -

RFQ

IRFP150MPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 23A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP12CN10LGXKSA1

IPP12CN10LGXKSA1

MOSFET N-CH 100V 69A TO220-3

Infineon Technologies
1,260 -

RFQ

IPP12CN10LGXKSA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 69A (Tc) 4.5V, 10V 12mOhm @ 69A, 10V 2.4V @ 83µA 58 nC @ 10 V ±20V 5600 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP9140NPBF

IRFP9140NPBF

MOSFET P-CH 100V 23A TO247AC

Infineon Technologies
3,776 -

RFQ

IRFP9140NPBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 13A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS60R3K4CEAKMA1

IPS60R3K4CEAKMA1

CONSUMER

Infineon Technologies
2,837 -

RFQ

IPS60R3K4CEAKMA1

Ficha técnica

Bulk,Tube * Not For New Designs - - - - - - - - - - - - - -
IPD090N03LGBTMA1

IPD090N03LGBTMA1

MOSFET N-CH 30V 40A TO252-3

Infineon Technologies
3,995 -

RFQ

IPD090N03LGBTMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB031N08N5ATMA1

IPB031N08N5ATMA1

MOSFET N-CH 80V 120A D2PAK

Infineon Technologies
7,795 -

RFQ

IPB031N08N5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 3.1mOhm @ 100A, 10V 3.8V @ 108µA 87 nC @ 10 V ±20V 6240 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7734PBF

IRFB7734PBF

MOSFET N-CH 75V 183A TO220AB

Infineon Technologies
9,901 -

RFQ

IRFB7734PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 183A (Tc) 6V, 10V 3.5mOhm @ 100A, 10V 3.7V @ 250µA 270 nC @ 10 V ±20V 10150 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4905LPBF

IRF4905LPBF

MOSFET P-CH 55V 42A TO262

Infineon Technologies
8,601 -

RFQ

IRF4905LPBF

Ficha técnica

Tube HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI4410ZPBF

IRFI4410ZPBF

MOSFET N-CH 100V 43A TO220AB FP

Infineon Technologies
2,297 -

RFQ

IRFI4410ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 10V 9.3mOhm @ 26A, 10V 4V @ 150µA 110 nC @ 10 V ±30V 4910 pF @ 50 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1324PBF

IRF1324PBF

MOSFET N-CH 24V 195A TO220AB

Infineon Technologies
4,505 -

RFQ

IRF1324PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.5mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF135B203

IRF135B203

MOSFET N-CH 135V 129A TO220-3

Infineon Technologies
1,991 -

RFQ

IRF135B203

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 135 V 129A (Tc) 10V 8.4mOhm @ 77A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 9700 pF @ 50 V - 441W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZPBF

IRF1405ZPBF

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
2,685 -

RFQ

IRF1405ZPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB260NPBF

IRFB260NPBF

MOSFET N-CH 200V 56A TO220AB

Infineon Technologies
934 -

RFQ

IRFB260NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 56A (Tc) 10V 40mOhm @ 34A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 4220 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R180P7XKSA1

IPP60R180P7XKSA1

MOSFET N-CH 650V 18A TO220-3

Infineon Technologies
2,000 -

RFQ

IPP60R180P7XKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 180mOhm @ 5.6A, 10V 4V @ 280µA 25 nC @ 10 V ±20V 1081 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP064NPBF

IRFP064NPBF

MOSFET N-CH 55V 110A TO247AC

Infineon Technologies
7,733 -

RFQ

IRFP064NPBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP80P03P4L04AKSA1

IPP80P03P4L04AKSA1

MOSFET P-CH 30V 80A TO220-3

Infineon Technologies
457 -

RFQ

IPP80P03P4L04AKSA1

Ficha técnica

Tube OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 4.4mOhm @ 80A, 10V 2V @ 253µA 160 nC @ 10 V +5V, -16V 11300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1004PBF

IRL1004PBF

MOSFET N-CH 40V 130A TO220AB

Infineon Technologies
2,206 -

RFQ

IRL1004PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4410PBF

IRFB4410PBF

MOSFET N-CH 100V 88A TO220AB

Infineon Technologies
7,510 -

RFQ

IRFB4410PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 88A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev1... 308309310311312313314315...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario