Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFN36N110P

IXFN36N110P

MOSFET N-CH 1100V 36A SOT-227B

IXYS
2,675 -

RFQ

IXFN36N110P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1100 V 36A (Tc) 10V 240mOhm @ 500mA, 10V 6.5V @ 1mA 350 nC @ 10 V ±30V 23000 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFN40N110P

IXFN40N110P

MOSFET N-CH 1100V 34A SOT-227B

IXYS
3,452 -

RFQ

IXFN40N110P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1100 V 34A (Tc) 10V 260mOhm @ 20A, 10V 6.5V @ 1mA 310 nC @ 10 V ±30V 19000 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXFR20N100P

IXFR20N100P

MOSFET N-CH 1000V 11A ISOPLUS247

IXYS
3,235 -

RFQ

IXFR20N100P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1000 V 11A (Tc) 10V 640mOhm @ 10A, 10V 6.5V @ 1mA 126 nC @ 10 V ±30V 7300 pF @ 25 V - 230W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR30N110P

IXFR30N110P

MOSFET N-CH 1100V 16A ISOPLUS247

IXYS
3,819 -

RFQ

IXFR30N110P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1100 V 16A (Tc) 10V 400mOhm @ 15A, 10V 6.5V @ 1mA 235 nC @ 10 V ±30V 13600 pF @ 25 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV12N120P

IXFV12N120P

MOSFET N-CH 1200V 12A PLUS220

IXYS
3,392 -

RFQ

IXFV12N120P

Ficha técnica

Tube HiPerFET™, PolarP2™ Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.35Ohm @ 500mA, 10V 6.5V @ 1mA 103 nC @ 10 V ±30V 5400 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV12N120PS

IXFV12N120PS

MOSFET N-CH 1200V 12A PLUS220SMD

IXYS
3,503 -

RFQ

IXFV12N120PS

Ficha técnica

Tube HiPerFET™, PolarP2™ Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.35Ohm @ 500mA, 10V 6.5V @ 1mA 103 nC @ 10 V ±30V 5400 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFV15N100P

IXFV15N100P

MOSFET N-CH 1000V 15A PLUS220

IXYS
3,338 -

RFQ

IXFV15N100P

Ficha técnica

Tube HiPerFET™, PolarP2™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 760mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5140 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFV15N100PS

IXFV15N100PS

MOSFET N-CH 1000V 15A PLUS220SMD

IXYS
2,179 -

RFQ

IXFV15N100PS

Ficha técnica

Tube HiPerFET™, PolarP2™ Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 15A (Tc) 10V 760mOhm @ 500mA, 10V 6.5V @ 1mA 97 nC @ 10 V ±30V 5140 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX30N110P

IXFX30N110P

MOSFET N-CH 1100V 30A PLUS247-3

IXYS
2,885 -

RFQ

IXFX30N110P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1100 V 30A (Tc) 10V 360mOhm @ 15A, 10V 6.5V @ 1mA 235 nC @ 10 V ±30V 13600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXKH20N60C5

IXKH20N60C5

MOSFET N-CH 600V 20A TO247AD

IXYS
3,884 -

RFQ

IXKH20N60C5

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 200mOhm @ 10A, 10V 3.5V @ 1.1mA 45 nC @ 10 V ±20V 1520 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
IXKH24N60C5

IXKH24N60C5

MOSFET N-CH 600V 24A TO247AD

IXYS
2,768 -

RFQ

IXKH24N60C5

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKH30N60C5

IXKH30N60C5

MOSFET N-CH 600V 30A TO247AD

IXYS
2,187 -

RFQ

IXKH30N60C5

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 125mOhm @ 16A, 10V 3.5V @ 1.1mA 70 nC @ 10 V ±20V 2500 pF @ 10 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKP10N60C5

IXKP10N60C5

MOSFET N-CH 600V 10A TO220AB

IXYS
2,630 -

RFQ

IXKP10N60C5

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKP10N60C5M

IXKP10N60C5M

MOSFET N-CH 600V 5.4A TO220ABFP

IXYS
2,589 -

RFQ

IXKP10N60C5M

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 5.4A (Tc) 10V 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKP13N60C5

IXKP13N60C5

MOSFET N-CH 600V 13A TO220AB

IXYS
3,054 -

RFQ

IXKP13N60C5

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 300mOhm @ 6.6A, 10V 3.5V @ 440µA 30 nC @ 10 V ±20V 1100 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKP13N60C5M

IXKP13N60C5M

MOSFET N-CH 600V 6.5A TO220ABFP

IXYS
3,506 -

RFQ

IXKP13N60C5M

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.5A (Tc) 10V 300mOhm @ 6.6A, 10V 3.5V @ 440µA 30 nC @ 10 V ±20V 1100 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXKP20N60C5

IXKP20N60C5

MOSFET N-CH 600V 20A TO220AB

IXYS
2,366 -

RFQ

IXKP20N60C5

Ficha técnica

Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 200mOhm @ 10A, 10V 3.5V @ 1.1mA 45 nC @ 10 V ±20V 1520 pF @ 100 V Super Junction - -55°C ~ 150°C (TJ) Through Hole
IXTP50N25T

IXTP50N25T

MOSFET N-CH 250V 50A TO220AB

IXYS
3,576 -

RFQ

IXTP50N25T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 50A (Tc) 10V 50mOhm @ 25A, 10V 5V @ 1mA 78 nC @ 10 V ±30V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ130N10T

IXTQ130N10T

MOSFET N-CH 100V 130A TO3P

IXYS
2,377 -

RFQ

IXTQ130N10T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 130A (Tc) 10V 9.1mOhm @ 25A, 10V 4.5V @ 250µA 104 nC @ 10 V ±20V 5080 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP22N60P3

IXFP22N60P3

MOSFET N-CH 600V 22A TO220AB

IXYS
2,418 -

RFQ

IXFP22N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 360mOhm @ 11A, 10V 5V @ 1.5mA 38 nC @ 10 V ±30V 2600 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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