Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRC740PBF

IRC740PBF

MOSFET N-CH 400V 10A TO220-5

Vishay Siliconix
2,504 -

RFQ

IRC740PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1200 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC644PBF

IRC644PBF

MOSFET N-CH 250V 14A TO220-5

Vishay Siliconix
2,072 -

RFQ

IRC644PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1200 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC840PBF

IRC840PBF

MOSFET N-CH 500V 8A TO220-5

Vishay Siliconix
2,193 -

RFQ

IRC840PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC540PBF

IRC540PBF

MOSFET N-CH 100V 28A TO220-5

Vishay Siliconix
2,370 -

RFQ

IRC540PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 69 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRC640PBF

IRC640PBF

MOSFET N-CH 200V 18A TO220-5

Vishay Siliconix
3,752 -

RFQ

IRC640PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB16N50KPBF

IRFB16N50KPBF

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix
3,851 -

RFQ

IRFB16N50KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 350mOhm @ 10A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2210 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB8N50KPBF

IRFIB8N50KPBF

MOSFET N-CH 500V 6.7A TO220-3

Vishay Siliconix
3,673 -

RFQ

IRFIB8N50KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.7A (Tc) 10V 350mOhm @ 4A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2160 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU020PBF

IRFU020PBF

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
3,631 -

RFQ

IRFU020PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD010PBF

IRFD010PBF

MOSFET N-CH 50V 1.7A 4DIP

Vishay Siliconix
3,249 -

RFQ

IRFD010PBF

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 1.7A (Tc) 10V 200mOhm @ 860mA, 10V 4V @ 250µA 13 nC @ 10 V ±20V 250 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP354PBF

IRFP354PBF

MOSFET N-CH 450V 14A TO247-3

Vishay Siliconix
2,626 -

RFQ

IRFP354PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 14A (Tc) 10V 350mOhm @ 8.4A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 2700 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460NPBF

IRFP460NPBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
2,928 -

RFQ

IRFP460NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 240mOhm @ 12A, 10V 5V @ 250µA 124 nC @ 10 V ±30V 3540 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQSA80ENW-T1_GE3

SQSA80ENW-T1_GE3

MOSFET N-CH 80V 18A PPAK1212-8

Vishay Siliconix
2,948 -

RFQ

SQSA80ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Tc) 4.5V, 10V 21mOhm @ 10A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 1358 pF @ 40 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS405EN-T1_GE3

SQS405EN-T1_GE3

MOSFET P-CH 12V 16A PPAK1212-8

Vishay Siliconix
2,139 -

RFQ

SQS405EN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 16A (Tc) 2.5V, 4.5V 20mOhm @ 13.5A, 4.5V 1V @ 250µA 75 nC @ 8 V ±8V 2650 pF @ 6 V - 39W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI9407BDY-T1-GE3

SI9407BDY-T1-GE3

MOSFET P-CH 60V 4.7A 8SO

Vishay Siliconix
2,845 -

RFQ

SI9407BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 4.7A (Tc) 4.5V, 10V 120mOhm @ 3.2A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 600 pF @ 30 V - 2.4W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

MOSFET P-CH 40V 55A PPAK SO-8

Vishay Siliconix
2,793 -

RFQ

SQJ423EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 55A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 2.5V @ 250µA 130 nC @ 10 V ±20V 4500 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR664DP-T1-GE3

SIR664DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
3,416 -

RFQ

SIR664DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) - 6mOhm @ 20A, 10V 2.5V @ 250µA 40 nC @ 10 V - 1750 pF @ 30 V - - - Surface Mount
SUD19P06-60-GE3

SUD19P06-60-GE3

MOSFET P-CH 60V 18.3A TO252

Vishay Siliconix
2,743 -

RFQ

SUD19P06-60-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 18.3A (Tc) 4.5V, 10V 60mOhm @ 10A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1710 pF @ 25 V - 2.3W (Ta), 38.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR624DP-T1-GE3

SIR624DP-T1-GE3

MOSFET N-CH 200V 18.6A PPAK SO-8

Vishay Siliconix
3,280 -

RFQ

SIR624DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18.6A (Tc) 7.5V, 10V 60mOhm @ 10A, 10V 4V @ 250µA 23 nC @ 7.5 V ±20V 1110 pF @ 100 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7172ADP-T1-RE3

SI7172ADP-T1-RE3

MOSFET N-CH 200V PPAK SO-8

Vishay Siliconix
3,059 -

RFQ

SI7172ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 5.3A (Ta), 17.2A (Tc) 7.5V, 10V 50mOhm @ 10A, 10V 3.1V @ 250µA 19.5 nC @ 10 V - 1110 pF @ 100 V - - -55°C ~ 125°C Surface Mount
IRF734PBF

IRF734PBF

MOSFET N-CH 450V 4.9A TO220AB

Vishay Siliconix
2,184 -

RFQ

IRF734PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 4.9A (Tc) 10V 1.2Ohm @ 2.9A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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