Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFBC20LPBF

IRFBC20LPBF

MOSFET N-CH 600V 2.2A TO262-3

Vishay Siliconix
3,866 -

RFQ

IRFBC20LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC634PBF

IRC634PBF

MOSFET N-CH 250V 8.1A TO220-5

Vishay Siliconix
2,783 -

RFQ

IRC634PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 4.9A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V Current Sensing 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF640LPBF

IRF640LPBF

MOSFET N-CH 200V 18A TO262-3

Vishay Siliconix
2,317 -

RFQ

IRF640LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC730PBF

IRC730PBF

MOSFET N-CH 400V 5.5A TO220-5

Vishay Siliconix
3,236 -

RFQ

IRC730PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V Current Sensing 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC830PBF

IRC830PBF

MOSFET N-CH 500V 4.5A TO220-5

Vishay Siliconix
2,488 -

RFQ

IRC830PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V Current Sensing 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI744GPBF

IRFI744GPBF

MOSFET N-CH 450V 4.9A TO220-3

Vishay Siliconix
3,135 -

RFQ

IRFI744GPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 4.9A (Tc) 10V 630mOhm @ 2.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1400 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI734GPBF

IRFI734GPBF

MOSFET N-CH 450V 3.4A TO220-3

Vishay Siliconix
3,660 -

RFQ

IRFI734GPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 3.4A (Tc) 10V 1.2Ohm @ 2A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC630PBF

IRC630PBF

MOSFET N-CH 200V 9A TO220-5

Vishay Siliconix
3,320 -

RFQ

IRC630PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V Current Sensing 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJA84EP-T1_GE3

SQJA84EP-T1_GE3

MOSFET N-CH 80V 46A PPAK SO-8

Vishay Siliconix
3,457 -

RFQ

SQJA84EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 46A (Tc) 4.5V, 10V 12.5mOhm @ 10A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 2100 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7716ADN-T1-GE3

SI7716ADN-T1-GE3

MOSFET N-CH 30V 16A PPAK1212-8

Vishay Siliconix
3,082 -

RFQ

SI7716ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 13.5mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 10 V ±20V 846 pF @ 15 V - 3.5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJ479EP-T1_GE3

SQJ479EP-T1_GE3

MOSFET P-CH 80V 32A PPAK SO-8

Vishay Siliconix
3,007 -

RFQ

SQJ479EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 80 V 32A (Tc) 4.5V, 10V 33mOhm @ 10A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 4500 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SISS05DN-T1-GE3

SISS05DN-T1-GE3

MOSFET P-CH 30V 29.4A/108A PPAK

Vishay Siliconix
3,261 -

RFQ

SISS05DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 29.4A (Ta), 108A (Tc) 4.5V, 10V 3.5mOhm @ 10A, 10V 2.2V @ 250µA 115 nC @ 10 V +16V, -20V 4930 pF @ 15 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA90DP-T1-RE3

SIRA90DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix
3,360 -

RFQ

SIRA90DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V 2V @ 250µA 153 nC @ 10 V +20V, -16V 10180 pF @ 15 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7465DP-T1-GE3

SI7465DP-T1-GE3

MOSFET P-CH 60V 3.2A PPAK SO-8

Vishay Siliconix
3,189 -

RFQ

SI7465DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta) 4.5V, 10V 64mOhm @ 5A, 10V 3V @ 250µA 40 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIS468DN-T1-GE3

SIS468DN-T1-GE3

MOSFET N-CH 80V 30A PPAK1212-8

Vishay Siliconix
3,985 -

RFQ

SIS468DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 19.5mOhm @ 10A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 780 pF @ 40 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4100DY-T1-E3

SI4100DY-T1-E3

MOSFET N-CH 100V 6.8A 8SO

Vishay Siliconix
2,356 -

RFQ

SI4100DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 6V, 10V 63mOhm @ 4.4A, 10V 4.5V @ 250µA 20 nC @ 10 V ±20V 600 pF @ 50 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA80EP-T1_GE3

SQJA80EP-T1_GE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix
3,408 -

RFQ

SQJA80EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 7mOhm @ 10A, 10V 2.5V @ 250µA 75 nC @ 10 V ±20V 3800 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB17N60KPBF

IRFB17N60KPBF

MOSFET N-CH 600V 17A TO220AB

Vishay Siliconix
2,716 -

RFQ

IRFB17N60KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 420mOhm @ 10A, 10V 5V @ 250µA 99 nC @ 10 V ±30V 2700 pF @ 25 V - 340W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBA22N50APBF

IRFBA22N50APBF

MOSFET N-CH 500V 24A SUPER-220

Vishay Siliconix
3,444 -

RFQ

IRFBA22N50APBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 230mOhm @ 13.8A, 10V 4V @ 250µA 115 nC @ 10 V ±30V 3400 pF @ 25 V - 340W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLU120PBF

IRLU120PBF

MOSFET N-CH 100V 7.7A TO251AA

Vishay Siliconix
3,580 -

RFQ

IRLU120PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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