Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFPS38N60LPBF

IRFPS38N60LPBF

MOSFET N-CH 600V 38A SUPER247

Vishay Siliconix
2,065 -

RFQ

IRFPS38N60LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 150mOhm @ 23A, 10V 5V @ 250µA 320 nC @ 10 V ±30V 7990 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS40N60KPBF

IRFPS40N60KPBF

MOSFET N-CH 600V 40A SUPER247

Vishay Siliconix
3,625 -

RFQ

IRFPS40N60KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 24A, 10V 5V @ 250µA 330 nC @ 10 V ±30V 7970 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP044PBF

IRFP044PBF

MOSFET N-CH 60V 57A TO247-3

Vishay Siliconix
2,771 -

RFQ

IRFP044PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 28mOhm @ 34A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP344PBF

IRFP344PBF

MOSFET N-CH 450V 9.5A TO247-3

Vishay Siliconix
2,067 -

RFQ

IRFP344PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 9.5A (Tc) 10V 630mOhm @ 5.7A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS37N50APBF

IRFPS37N50APBF

MOSFET N-CH 500V 36A SUPER247

Vishay Siliconix
3,910 -

RFQ

IRFPS37N50APBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 36A (Tc) 10V 130mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±30V 5579 pF @ 25 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS40N50LPBF

IRFPS40N50LPBF

MOSFET N-CH 500V 46A SUPER247

Vishay Siliconix
3,697 -

RFQ

IRFPS40N50LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 46A (Tc) 10V 100mOhm @ 28A, 10V 5V @ 250µA 380 nC @ 10 V ±30V 8110 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQ2310ES-T1_GE3

SQ2310ES-T1_GE3

MOSFET N-CH 20V 6A TO236

Vishay Siliconix
3,369 -

RFQ

SQ2310ES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6A (Tc) 1.5V, 4.5V 30mOhm @ 5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 485 pF @ 10 V - 2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TN2404K-T1-E3

TN2404K-T1-E3

MOSFET N-CH 240V 200MA SOT23-3

Vishay Siliconix
2,836 -

RFQ

TN2404K-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 240 V 200mA (Ta) 2.5V, 10V 4Ohm @ 300mA, 10V 2V @ 250µA 8 nC @ 10 V ±20V - - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4425DDY-T1-GE3

SI4425DDY-T1-GE3

MOSFET P-CH 30V 19.7A 8SO

Vishay Siliconix
2,075 -

RFQ

SI4425DDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 19.7A (Tc) 4.5V, 10V 9.8mOhm @ 13A, 10V 2.5V @ 250µA 80 nC @ 10 V ±20V 2610 pF @ 15 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3458BDV-T1-GE3

SI3458BDV-T1-GE3

MOSFET N-CH 60V 4.1A 6TSOP

Vishay Siliconix
2,066 -

RFQ

SI3458BDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 4.1A (Tc) 4.5V, 10V 100mOhm @ 3.2A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 350 pF @ 30 V - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL110TRPBF

IRLL110TRPBF

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
2,692 -

RFQ

IRLL110TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 4V, 5V 540mOhm @ 900mA, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL014TRPBF

IRLL014TRPBF

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix
26,755 -

RFQ

IRLL014TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Tc) 4V, 5V 200mOhm @ 1.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7617DN-T1-GE3

SI7617DN-T1-GE3

MOSFET P-CH 30V 35A PPAK1212-8

Vishay Siliconix
2,181 -

RFQ

SI7617DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 12.3mOhm @ 13.9A, 10V 2.5V @ 250µA 59 nC @ 10 V ±25V 1800 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI624GPBF

IRFI624GPBF

MOSFET N-CH 250V 3.4A TO220-3

Vishay Siliconix
2,084 -

RFQ

IRFI624GPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.4A (Tc) 10V 1.1Ohm @ 2A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI620GPBF

IRLI620GPBF

MOSFET N-CH 200V 4A TO220-3

Vishay Siliconix
2,439 -

RFQ

IRLI620GPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 4A (Tc) 4V, 5V 800mOhm @ 2.4A, 5V 2V @ 250µA 16 nC @ 10 V ±10V 360 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF737LCPBF

IRF737LCPBF

MOSFET N-CH 300V 6.1A TO220AB

Vishay Siliconix
3,966 -

RFQ

IRF737LCPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 6.1A (Tc) 10V 750mOhm @ 3.7A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 430 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF644NPBF

IRF644NPBF

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix
3,851 -

RFQ

IRF644NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF644NSPBF

IRF644NSPBF

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
2,155 -

RFQ

IRF644NSPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF634SPBF

IRF634SPBF

MOSFET N-CH 250V 8.1A D2PAK

Vishay Siliconix
2,696 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ30PBF

IRFZ30PBF

MOSFET N-CH 50V 30A TO220AB

Vishay Siliconix
3,827 -

RFQ

IRFZ30PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 30A (Tc) 10V 50mOhm @ 16A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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