Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4114DY-T1-GE3

SI4114DY-T1-GE3

MOSFET N-CH 20V 20A 8SO

Vishay Siliconix
2,970 -

RFQ

SI4114DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V 2.1V @ 250µA 95 nC @ 10 V ±16V 3700 pF @ 10 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS184DN-T1-GE3

SIS184DN-T1-GE3

MOSFET N-CH 60V 17.4A/65.3A PPAK

Vishay Siliconix
3,970 -

RFQ

SIS184DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 17.4A (Ta), 65.3A (Tc) 7.5V, 10V 5.8mOhm @ 10A, 10V 3.4V @ 250µA 32 nC @ 10 V ±20V 1490 pF @ 30 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF644NSTRLPBF

IRF644NSTRLPBF

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
3,149 -

RFQ

IRF644NSTRLPBF

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUD50P04-08-GE3

SUD50P04-08-GE3

MOSFET P-CH 40V 50A TO252

Vishay Siliconix
2,452 -

RFQ

SUD50P04-08-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 4.5V, 10V 8.1mOhm @ 22A, 10V 2.5V @ 250µA 159 nC @ 10 V ±20V 5380 pF @ 20 V - 2.5W (Ta), 73.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3440DV-T1-E3

SI3440DV-T1-E3

MOSFET N-CH 150V 1.2A 6TSOP

Vishay Siliconix
3,873 -

RFQ

SI3440DV-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 1.2A (Ta) 6V, 10V 375mOhm @ 1.5A, 10V 4V @ 250µA 8 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3440DV-T1-GE3

SI3440DV-T1-GE3

MOSFET N-CH 150V 1.2A 6TSOP

Vishay Siliconix
2,857 -

RFQ

SI3440DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 1.2A (Ta) 6V, 10V 375mOhm @ 1.5A, 10V 4V @ 250µA 8 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7454DDP-T1-GE3

SI7454DDP-T1-GE3

MOSFET N-CH 100V 21A PPAK SO-8

Vishay Siliconix
3,414 -

RFQ

SI7454DDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 4.5V, 10V 33mOhm @ 10A, 10V 3V @ 250µA 19.5 nC @ 10 V ±20V 550 pF @ 50 V - 4.1W (Ta), 29.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA20DP-T1-RE3

SIRA20DP-T1-RE3

MOSFET N-CH 25V 81.7A/100A PPAK

Vishay Siliconix
3,656 -

RFQ

SIRA20DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 81.7A (Ta), 100A (Tc) 4.5V, 10V 0.58mOhm @ 20A, 10V 2.1V @ 250µA 200 nC @ 10 V +16V, -12V 10850 pF @ 10 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS443DN-T1-GE3

SIS443DN-T1-GE3

MOSFET P-CH 40V 35A PPAK 1212-8

Vishay Siliconix
3,451 -

RFQ

SIS443DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 35A (Tc) 4.5V, 10V 11.7mOhm @ 15A, 10V 2.3V @ 250µA 135 nC @ 10 V ±20V 4370 pF @ 20 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7386DP-T1-GE3

SI7386DP-T1-GE3

MOSFET N-CH 30V 12A PPAK SO-8

Vishay Siliconix
2,689 -

RFQ

SI7386DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 7mOhm @ 19A, 10V 2.5V @ 250µA 18 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4164DY-T1-GE3

SI4164DY-T1-GE3

MOSFET N-CH 30V 30A 8SO

Vishay Siliconix
2,789 -

RFQ

SI4164DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 3.2mOhm @ 15A, 10V 2.5V @ 250µA 95 nC @ 10 V ±20V 3545 pF @ 15 V - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4848DY-T1-GE3

SI4848DY-T1-GE3

MOSFET N-CH 150V 2.7A 8SO

Vishay Siliconix
3,877 -

RFQ

SI4848DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 2.7A (Ta) 6V, 10V 85mOhm @ 3.5A, 10V 2V @ 250µA (Min) 21 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7113DN-T1-GE3

SI7113DN-T1-GE3

MOSFET P-CH 100V 13.2A PPAK

Vishay Siliconix
2,948 -

RFQ

SI7113DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 100 V 13.2A (Tc) 4.5V, 10V 134mOhm @ 4A, 10V 3V @ 250µA 55 nC @ 10 V ±20V 1480 pF @ 50 V - 3.7W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI4840BDY-T1-GE3

SI4840BDY-T1-GE3

MOSFET N-CH 40V 19A 8SO

Vishay Siliconix
3,931 -

RFQ

SI4840BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Tc) 4.5V, 10V 9mOhm @ 12.4A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 2000 pF @ 20 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9310TRPBF

IRFR9310TRPBF

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix
2,814 -

RFQ

IRFR9310TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 400 V 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 270 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS26DN-T1-GE3

SISS26DN-T1-GE3

MOSFET N-CH 60V 60A PPAK1212-8S

Vishay Siliconix
2,944 -

RFQ

SISS26DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 6V, 10V 4.5mOhm @ 15A, 10V 3.6V @ 250µA 37 nC @ 10 V ±20V 1710 pF @ 30 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7322DN-T1-GE3

SI7322DN-T1-GE3

MOSFET N-CH 100V 18A PPAK1212-8

Vishay Siliconix
3,383 -

RFQ

SI7322DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 58mOhm @ 5.5A, 10V 4.4V @ 250µA 20 nC @ 10 V ±20V 750 pF @ 50 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7414DN-T1-E3

SI7414DN-T1-E3

MOSFET N-CH 60V 5.6A PPAK1212-8

Vishay Siliconix
1,968 -

RFQ

SI7414DN-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 5.6A (Ta) 4.5V, 10V 25mOhm @ 8.7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7414DN-T1-GE3

SI7414DN-T1-GE3

MOSFET N-CH 60V 5.6A PPAK1212-8

Vishay Siliconix
3,729 -

RFQ

SI7414DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 5.6A (Ta) 4.5V, 10V 25mOhm @ 8.7A, 10V 3V @ 250µA 25 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7820DN-T1-GE3

SI7820DN-T1-GE3

MOSFET N-CH 200V 1.7A PPAK1212-8

Vishay Siliconix
3,319 -

RFQ

SI7820DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 1.7A (Ta) 6V, 10V 240mOhm @ 2.6A, 10V 4V @ 250µA 18 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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