Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4435DDY-T1-GE3

SI4435DDY-T1-GE3

MOSFET P-CH 30V 11.4A 8SO

Vishay Siliconix
3,148 -

RFQ

SI4435DDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 11.4A (Tc) 4.5V, 10V 24mOhm @ 9.1A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 1350 pF @ 15 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7615ADN-T1-GE3

SI7615ADN-T1-GE3

MOSFET P-CH 20V 35A PPAK1212-8

Vishay Siliconix
2,272 -

RFQ

SI7615ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 10V 4.4mOhm @ 20A, 10V 1.5V @ 250µA 183 nC @ 10 V ±12V 5590 pF @ 10 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ3426EV-T1_GE3

SQ3426EV-T1_GE3

MOSFET N-CHANNEL 60V 7A 6TSOP

Vishay Siliconix
33,000 -

RFQ

SQ3426EV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V 2.5V @ 250µA 12 nC @ 4.5 V ±20V 720 pF @ 30 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI4143DY-T1-GE3

SI4143DY-T1-GE3

MOSFET P-CHANNEL 30V 25.3A 8SO

Vishay Siliconix
3,955 -

RFQ

SI4143DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 25.3A (Tc) 4.5V, 10V 6.2mOhm @ 12A, 10V 2.5V @ 250µA 167 nC @ 10 V ±25V 6630 pF @ 15 V - 6W (Tc) -55°C ~ 150°C (TA) Surface Mount
IRFIB7N50LPBF

IRFIB7N50LPBF

MOSFET N-CH 500V 6.8A TO220-3

Vishay Siliconix
2,684 -

RFQ

IRFIB7N50LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.8A (Tc) 10V 380mOhm @ 4.1A, 10V 5V @ 250µA 92 nC @ 10 V ±30V 2220 pF @ 25 V - 46W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB5N50LPBF

IRFIB5N50LPBF

MOSFET N-CH 500V 4.7A TO220-3

Vishay Siliconix
3,668 -

RFQ

IRFIB5N50LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.7A (Tc) 10V 800mOhm @ 2.4A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1000 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP254NPBF

IRFP254NPBF

MOSFET N-CH 250V 23A TO247-3

Vishay Siliconix
3,369 -

RFQ

IRFP254NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 23A (Tc) 10V 125mOhm @ 14A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2040 pF @ 25 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP450NPBF

IRFP450NPBF

MOSFET N-CH 500V 14A TO247-3

Vishay Siliconix
3,347 -

RFQ

IRFP450NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 370mOhm @ 8.4A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB16N60LPBF

IRFB16N60LPBF

MOSFET N-CH 600V 16A TO220AB

Vishay Siliconix
3,772 -

RFQ

IRFB16N60LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 460mOhm @ 9A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 2720 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP264NPBF

IRFP264NPBF

MOSFET N-CH 250V 44A TO247-3

Vishay Siliconix
2,821 -

RFQ

IRFP264NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 60mOhm @ 25A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 3860 pF @ 25 V - 380W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP15N60LPBF

IRFP15N60LPBF

MOSFET N-CH 600V 15A TO247-3

Vishay Siliconix
2,790 -

RFQ

IRFP15N60LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 460mOhm @ 9A, 10V 5V @ 250µA 100 nC @ 10 V ±30V 2720 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP22N60C3PBF

IRFP22N60C3PBF

MOSFET N-CH 650V 22A TO247-3

Vishay Siliconix
3,484 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 650 V 22A (Ta) - - - - - - - - - Through Hole
IRFPS35N50LPBF

IRFPS35N50LPBF

MOSFET N-CH 500V 34A SUPER247

Vishay Siliconix
3,053 -

RFQ

IRFPS35N50LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 34A (Tc) 10V 145mOhm @ 20A, 10V 5V @ 250µA 230 nC @ 10 V ±30V 5580 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS30N60KPBF

IRFPS30N60KPBF

MOSFET N-CH 600V 30A SUPER247

Vishay Siliconix
2,812 -

RFQ

IRFPS30N60KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 250µA 220 nC @ 10 V ±30V 5870 pF @ 25 V - 450W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS29N60LPBF

IRFPS29N60LPBF

MOSFET N-CH 600V 29A SUPER247

Vishay Siliconix
2,900 -

RFQ

IRFPS29N60LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 210mOhm @ 17A, 10V 5V @ 250µA 220 nC @ 10 V ±30V 6160 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7619DN-T1-GE3

SI7619DN-T1-GE3

MOSFET P-CH 30V 24A PPAK1212-8

Vishay Siliconix
2,662 -

RFQ

SI7619DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 24A (Tc) 4.5V, 10V 21mOhm @ 10.5A, 10V 3V @ 250µA 50 nC @ 10 V ±20V 1350 pF @ 15 V - 3.5W (Ta), 27.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISS27DN-T1-GE3

SISS27DN-T1-GE3

MOSFET P-CH 30V 50A PPAK 1212-8S

Vishay Siliconix
2,136 -

RFQ

SISS27DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5.6mOhm @ 15A, 10V 2.2V @ 250µA 140 nC @ 10 V ±20V 5250 pF @ 15 V - 4.8W (Ta), 57W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI2333DS-T1-E3

SI2333DS-T1-E3

MOSFET P-CH 12V 4.1A SOT23-3

Vishay Siliconix
2,502 -

RFQ

SI2333DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 4.1A (Ta) 1.8V, 4.5V 32mOhm @ 5.3A, 4.5V 1V @ 250µA 18 nC @ 4.5 V ±8V 1100 pF @ 6 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4401FDY-T1-GE3

SI4401FDY-T1-GE3

MOSFET P-CH 40V 9.9A/14A 8SO

Vishay Siliconix
3,145 -

RFQ

SI4401FDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 40 V 9.9A (Ta), 14A (Tc) 4.5V, 10V 14.2mOhm @ 10A, 10V 2.3V @ 250µA 100 nC @ 10 V ±20V 4000 pF @ 20 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4056ADY-T1-GE3

SI4056ADY-T1-GE3

MOSFET N-CH 100V 5.9A/8.3A 8SOIC

Vishay Siliconix
2,221 -

RFQ

SI4056ADY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.9A (Ta), 8.3A (Tc) - 29.2mOhm @ 5.9A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1330 pF @ 50 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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