Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF744PBF

IRF744PBF

MOSFET N-CH 450V 8.8A TO220AB

Vishay Siliconix
3,240 -

RFQ

IRF744PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 8.8A (Tc) 10V 630mOhm @ 5.3A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1400 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRCZ24PBF

IRCZ24PBF

MOSFET N-CH 55V 17A TO220-5

Vishay Siliconix
2,466 -

RFQ

IRCZ24PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 720 pF @ 25 V Current Sensing 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB9N30APBF

IRFB9N30APBF

MOSFET N-CH 300V 9.3A TO220AB

Vishay Siliconix
2,944 -

RFQ

IRFB9N30APBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 9.3A (Tc) 10V 450mOhm @ 5.6A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 920 pF @ 25 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFL9014TRPBF

IRFL9014TRPBF

MOSFET P-CH 60V 1.8A SOT223

Vishay Siliconix
2,611 -

RFQ

IRFL9014TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 1.8A (Tc) 10V 500mOhm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4436DY-T1-E3

SI4436DY-T1-E3

MOSFET N-CH 60V 8A 8SO

Vishay Siliconix
3,691 -

RFQ

SI4436DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 4.5V, 10V 36mOhm @ 4.6A, 10V 2.5V @ 250µA 32 nC @ 10 V ±20V 1100 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA456DJ-T1-GE3

SIA456DJ-T1-GE3

MOSFET N-CH 200V 2.6A PPAK SC70

Vishay Siliconix
2,610 -

RFQ

SIA456DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 1.8V, 4.5V 1.38Ohm @ 750mA, 4.5V 1.4V @ 250µA 14.5 nC @ 10 V ±16V 350 pF @ 100 V - 3.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4463CDY-T1-GE3

SI4463CDY-T1-GE3

MOSFET P-CH 20V 13.6A/49A 8SO

Vishay Siliconix
3,979 -

RFQ

SI4463CDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 13.6A (Ta), 49A (Tc) 2.5V, 10V 8mOhm @ 13A, 10V 1.4V @ 250µA 162 nC @ 10 V ±12V 4250 pF @ 15 V - 2.7W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS176LDN-T1-GE3

SIS176LDN-T1-GE3

N-CHANNEL 70 V (D-S) MOSFET POWE

Vishay Siliconix
2,062 -

RFQ

SIS176LDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 70 V 12.9A (Ta), 42.3A (Tc) 3.3V, 4.5V 10.9mOhm @ 10A, 4.5V 1.6V @ 250µA 19 nC @ 4.5 V ±12V 1660 pF @ 35 V - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD23N06-31-GE3

SUD23N06-31-GE3

MOSFET N-CH 60V 21.4A TO252

Vishay Siliconix
3,521 -

RFQ

SUD23N06-31-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 21.4A (Tc) 4.5V, 10V 31mOhm @ 15A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 670 pF @ 25 V - 5.7W (Ta), 31.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS488DN-T1-GE3

SIS488DN-T1-GE3

MOSFET N-CH 40V 40A PPAK1212-8

Vishay Siliconix
3,136 -

RFQ

SIS488DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.2V @ 250µA 32 nC @ 10 V ±20V 1330 pF @ 20 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4431BDY-T1-E3

SI4431BDY-T1-E3

MOSFET P-CH 30V 5.7A 8SO

Vishay Siliconix
3,196 -

RFQ

SI4431BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5.7A (Ta) 4.5V, 10V 30mOhm @ 7.5A, 10V 3V @ 250µA 20 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRC530PBF

IRC530PBF

MOSFET N-CH 100V 14A TO220-5

Vishay Siliconix
3,657 -

RFQ

IRC530PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.4A, 10V 4V @ 250µA 26 nC @ 10 V ±20V 700 pF @ 25 V Current Sensing 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRCZ34PBF

IRCZ34PBF

MOSFET N-CH 60V 30A TO220-5

Vishay Siliconix
2,921 -

RFQ

IRCZ34PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1300 pF @ 25 V Current Sensing 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBC30LPBF

IRFBC30LPBF

MOSFET N-CH 600V 3.6A TO262-3

Vishay Siliconix
3,690 -

RFQ

IRFBC30LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR426DP-T1-GE3

SIR426DP-T1-GE3

MOSFET N-CH 40V 30A PPAK SO-8

Vishay Siliconix
2,083 -

RFQ

SIR426DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 10.5mOhm @ 15A, 10V 2.5V @ 250µA 31 nC @ 10 V ±20V 1160 pF @ 20 V - 4.8W (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7613DN-T1-GE3

SI7613DN-T1-GE3

MOSFET P-CH 20V 35A PPAK1212-8

Vishay Siliconix
3,021 -

RFQ

SI7613DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 8.7mOhm @ 17A, 10V 2.2V @ 250µA 87 nC @ 10 V ±16V 2620 pF @ 10 V - 3.8W (Ta), 52.1W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIS410DN-T1-GE3

SIS410DN-T1-GE3

MOSFET N-CH 20V 35A PPAK 1212-8

Vishay Siliconix
3,091 -

RFQ

SIS410DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 1600 pF @ 10 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIS892ADN-T1-GE3

SIS892ADN-T1-GE3

MOSFET N-CH 100V 28A PPAK1212-8

Vishay Siliconix
2,393 -

RFQ

SIS892ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 4.5V, 10V 33mOhm @ 10A, 10V 3V @ 250µA 19.5 nC @ 10 V ±20V 550 pF @ 50 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF30SPBF

IRFBF30SPBF

MOSFET N-CH 900V 3.6A D2PAK

Vishay Siliconix
2,160 -

RFQ

IRFBF30SPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRCZ44PBF

IRCZ44PBF

MOSFET N-CH 60V 50A TO220-5

Vishay Siliconix
2,816 -

RFQ

IRCZ44PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V Current Sensing 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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