Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIS413DN-T1-GE3

SIS413DN-T1-GE3

MOSFET P-CH 30V 18A PPAK 1212-8

Vishay Siliconix
2,570 -

RFQ

SIS413DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 18A (Tc) 4.5V, 10V 9.4mOhm @ 15A, 10V 2.5V @ 250µA 110 nC @ 10 V ±20V 4280 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2329DS-T1-GE3

SI2329DS-T1-GE3

MOSFET P-CH 8V 6A SOT23-3

Vishay Siliconix
3,200 -

RFQ

SI2329DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 6A (Tc) 1.2V, 4.5V 30mOhm @ 5.3A, 4.5V 800mV @ 250µA 29 nC @ 4.5 V ±5V 1485 pF @ 4 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISH615ADN-T1-GE3

SISH615ADN-T1-GE3

MOSFET P-CH 20V 22.1A/35A PPAK

Vishay Siliconix
2,288 -

RFQ

SISH615ADN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 20 V 22.1A (Ta), 35A (Tc) 2.5V, 10V 4.4mOhm @ 20A, 10V 1.5V @ 250µA 183 nC @ 10 V ±12V 5590 pF @ 10 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA471DJ-T1-GE3

SIA471DJ-T1-GE3

MOSFET P-CH 30V 12.9A/30.3A PPAK

Vishay Siliconix
3,844 -

RFQ

SIA471DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 12.9A (Ta), 30.3A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 2.5V @ 250µA 27.8 nC @ 10 V +16V, -20V 1170 pF @ 15 V - 3.5W (Ta), 19.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2309ES-T1_GE3

SQ2309ES-T1_GE3

MOSFET P-CH 60V 1.7A TO236

Vishay Siliconix
2,353 -

RFQ

SQ2309ES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 1.7A (Tc) 4.5V, 10V 336mOhm @ 3.8A, 10V 2.5V @ 250µA 8.5 nC @ 10 V ±20V 265 pF @ 25 V - 2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ2361AEES-T1_GE3

SQ2361AEES-T1_GE3

MOSFET P-CH 60V 2.8A SSOT23

Vishay Siliconix
2,235 -

RFQ

SQ2361AEES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 2.8A (Tc) 10V 170mOhm @ 2.4A, 10V 2.5V @ 250µA 15 nC @ 10 V ±20V 620 pF @ 30 V - 2W (Tc) -55°C ~ 175°C (TA) Surface Mount
SQ2362ES-T1_GE3

SQ2362ES-T1_GE3

MOSFET N-CH 60V 4.3A SOT23-3

Vishay Siliconix
2,116 -

RFQ

SQ2362ES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 4.3A (Tc) 10V 95mOhm @ 4.5A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 550 pF @ 30 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

MOSFET N-CH 60V 2A SOT23-3

Vishay Siliconix
3,874 -

RFQ

SQ2364EES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 2A (Tc) 1.5V, 4.5V 240mOhm @ 2A, 4.5V 1V @ 250µA 2.5 nC @ 4.5 V ±8V 330 pF @ 25 V - 3W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIA441DJ-T1-GE3

SIA441DJ-T1-GE3

MOSFET P-CH 40V 12A PPAK SC70-6

Vishay Siliconix
3,378 -

RFQ

SIA441DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 12A (Tc) 4.5V, 10V 47mOhm @ 4.4A, 10V 2.2V @ 250µA 35 nC @ 10 V ±20V 890 pF @ 20 V - 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ2398ES-T1_GE3

SQ2398ES-T1_GE3

MOSFET N-CH 100V 1.6A SOT23-3

Vishay Siliconix
2,749 -

RFQ

SQ2398ES-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 1.6A (Tc) 10V 300mOhm @ 1.5A, 10V 3.5V @ 250µA 3.4 nC @ 10 V ±20V 152 pF @ 50 V - 2W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI1469DH-T1-E3

SI1469DH-T1-E3

MOSFET P-CH 20V 2.7A SC70-6

Vishay Siliconix
2,153 -

RFQ

SI1469DH-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Tc) 2.5V, 10V 80mOhm @ 2A, 10V 1.5V @ 250µA 8.5 nC @ 4.5 V ±12V 470 pF @ 10 V - 1.5W (Ta), 2.78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF634NLPBF

IRF634NLPBF

MOSFET N-CH 250V 8A I2PAK

Vishay Siliconix
2,885 -

RFQ

IRF634NLPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 435mOhm @ 4.8A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF634NPBF

IRF634NPBF

MOSFET N-CH 250V 8A TO220AB

Vishay Siliconix
3,650 -

RFQ

IRF634NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 435mOhm @ 4.8A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF634NSPBF

IRF634NSPBF

MOSFET N-CH 250V 8A D2PAK

Vishay Siliconix
3,023 -

RFQ

IRF634NSPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8A (Tc) 10V 435mOhm @ 4.8A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF644NLPBF

IRF644NLPBF

MOSFET N-CH 250V 14A I2PAK

Vishay Siliconix
3,512 -

RFQ

IRF644NLPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 240mOhm @ 8.4A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 1060 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQ2319ADS-T1_GE3

SQ2319ADS-T1_GE3

MOSFET P-CH 40V 4.6A SOT23-3

Vishay Siliconix
3,890 -

RFQ

SQ2319ADS-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Tc) 4.5V, 10V 75mOhm @ 3A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 620 pF @ 20 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ3419EV-T1_GE3

SQ3419EV-T1_GE3

MOSFET P-CH 40V 6.9A 6TSOP

Vishay Siliconix
3,507 -

RFQ

SQ3419EV-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 6.9A (Tc) 4.5V, 10V 58mOhm @ 2.5A, 10V 2.5V @ 250µA 11.3 nC @ 4.5 V ±20V 990 pF @ 20 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS427EDN-T1-GE3

SIS427EDN-T1-GE3

MOSFET P-CH 30V 50A PPAK1212-8

Vishay Siliconix
3,865 -

RFQ

SIS427EDN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 10.6mOhm @ 11A, 10V 2.5V @ 250µA 66 nC @ 10 V ±25V 1930 pF @ 15 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2323DS-T1-E3

SI2323DS-T1-E3

MOSFET P-CH 20V 3.7A SOT23-3

Vishay Siliconix
3,669 -

RFQ

SI2323DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.7A (Ta) 1.8V, 4.5V 39mOhm @ 4.7A, 4.5V 1V @ 250µA 19 nC @ 4.5 V ±8V 1020 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2319DS-T1-E3

SI2319DS-T1-E3

MOSFET P-CH 40V 2.3A SOT23-3

Vishay Siliconix
2,489 -

RFQ

SI2319DS-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 2.3A (Ta) 4.5V, 10V 82mOhm @ 3A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 470 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
Total 4747 Record«Prev1... 2021222324252627...238Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario