Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLU3714TR

IRLU3714TR

MOSFET N-CH 20V 36A TO251AA

Vishay Siliconix
3,821 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 3V @ 250µA 9.7 nC @ 4.5 V ±20V 670 pF @ 10 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHG47N60AEL-GE3

SIHG47N60AEL-GE3

MOSFET N-CH 600V 47A TO247AC

Vishay Siliconix
2,725 -

RFQ

SIHG47N60AEL-GE3

Ficha técnica

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 65mOhm @ 23.5A, 10V 4V @ 250µA 222 nC @ 10 V ±30V 4600 pF @ 100 V - 379W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB17N60K

IRFB17N60K

MOSFET N-CH 600V 17A TO220AB

Vishay Siliconix
2,408 -

RFQ

IRFB17N60K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 420mOhm @ 10A, 10V 5V @ 250µA 99 nC @ 10 V ±30V 2700 pF @ 25 V - 340W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG73N60AEL-GE3

SIHG73N60AEL-GE3

MOSFET N-CH 600V 69A TO247AC

Vishay Siliconix
2,984 -

RFQ

SIHG73N60AEL-GE3

Ficha técnica

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 69A (Tc) 10V 42mOhm @ 36.5A, 10V 4V @ 250µA 342 nC @ 10 V ±30V 6709 pF @ 100 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF1405ZTRL

IRF1405ZTRL

MOSFET N-CH 55V 75A TO220AB

Vishay Siliconix
2,760 -

RFQ

IRF1405ZTRL

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZTRR

IRF1405ZTRR

MOSFET N-CH 55V 75A TO220AB

Vishay Siliconix
3,757 -

RFQ

IRF1405ZTRR

Ficha técnica

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807ZSTRL

IRF2807ZSTRL

MOSFET N-CH 75V 75A D2PAK

Vishay Siliconix
2,727 -

RFQ

IRF2807ZSTRL

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807ZSTRR

IRF2807ZSTRR

MOSFET N-CH 75V 75A D2PAK

Vishay Siliconix
3,892 -

RFQ

IRF2807ZSTRR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205ZSTRL

IRF3205ZSTRL

MOSFET N-CH 55V 75A D2PAK

Vishay Siliconix
3,279 -

RFQ

IRF3205ZSTRL

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205ZSTRR

IRF3205ZSTRR

MOSFET N-CH 55V 75A D2PAK

Vishay Siliconix
2,720 -

RFQ

IRF3205ZSTRR

Ficha técnica

Tape & Reel (TR) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU4105ZTR

IRFU4105ZTR

MOSFET N-CH 55V 30A TO251AA

Vishay Siliconix
2,580 -

RFQ

IRFU4105ZTR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4105ZTRL

IRFU4105ZTRL

MOSFET N-CH 55V 30A TO251AA

Vishay Siliconix
3,653 -

RFQ

IRFU4105ZTRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU4105ZTRR

IRFU4105ZTRR

MOSFET N-CH 55V 30A TO251AA

Vishay Siliconix
2,526 -

RFQ

IRFU4105ZTRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB16N50K

IRFB16N50K

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix
2,768 -

RFQ

IRFB16N50K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 350mOhm @ 10A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2210 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB8N50K

IRFIB8N50K

MOSFET N-CH 500V 6.7A TO220-3

Vishay Siliconix
2,692 -

RFQ

IRFIB8N50K

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.7A (Tc) 10V 350mOhm @ 4A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2160 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
2N7002K-T1-GE3

2N7002K-T1-GE3

MOSFET N-CH 60V 300MA TO236

Vishay Siliconix
3,049 -

RFQ

2N7002K-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 30 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2365EDS-T1-GE3

SI2365EDS-T1-GE3

MOSFET P-CH 20V 5.9A TO236

Vishay Siliconix
2,659 -

RFQ

SI2365EDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 5.9A (Tc) 1.8V, 4.5V 32mOhm @ 4A, 4.5V 1V @ 250µA 36 nC @ 8 V ±8V - - 1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2347DS-T1-GE3

SI2347DS-T1-GE3

MOSFET P-CH 30V 5A SOT23-3

Vishay Siliconix
2,999 -

RFQ

SI2347DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 5A (Tc) 4.5V, 10V 42mOhm @ 3.8A, 10V 2.5V @ 250µA 22 nC @ 10 V ±20V 705 pF @ 15 V - 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA461DJ-T1-GE3

SIA461DJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix
2,531 -

RFQ

SIA461DJ-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Tc) 1.8V, 4.5V 33mOhm @ 5.2A, 4.5V 1V @ 250µA 45 nC @ 8 V ±8V 1300 pF @ 10 V - 3.4W (Ta), 17.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2369DS-T1-GE3

SI2369DS-T1-GE3

MOSFET P-CH 30V 7.6A TO236

Vishay Siliconix
2,160 -

RFQ

SI2369DS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 7.6A (Tc) 4.5V, 10V 29mOhm @ 5.4A, 10V 2.5V @ 250µA 36 nC @ 10 V ±20V 1295 pF @ 15 V - 1.25W (Ta), 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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