Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL640STRLPBF

IRL640STRLPBF

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix
398 -

RFQ

IRL640STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA99DP-T1-GE3

SIRA99DP-T1-GE3

MOSFET P-CH 30V 47.9A/195A PPAK

Vishay Siliconix
300 -

RFQ

SIRA99DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 47.9A (Ta), 195A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V 2.5V @ 250µA 260 nC @ 10 V +16V, -20V 10955 pF @ 15 V - 6.35W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH240N60E-T1-GE3

SIHH240N60E-T1-GE3

MOSFET N-CH 600V 12A PPAK 8 X 8

Vishay Siliconix
3,701 -

RFQ

SIHH240N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) EF Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 240mOhm @ 5.5A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 783 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF12N60E-GE3

SIHF12N60E-GE3

MOSFET N-CH 600V 12A TO220

Vishay Siliconix
365 -

RFQ

SIHF12N60E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF7822TRL

IRF7822TRL

MOSFET N-CH 30V 18A 8SO

Vishay Siliconix
2,086 -

RFQ

IRF7822TRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V 6.5mOhm @ 15A, 4.5V 1V @ 250µA 60 nC @ 5 V ±12V 5500 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7822TRR

IRF7822TRR

MOSFET N-CH 30V 18A 8SO

Vishay Siliconix
2,015 -

RFQ

IRF7822TRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V 6.5mOhm @ 15A, 4.5V 1V @ 250µA 60 nC @ 5 V ±12V 5500 pF @ 16 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFI620

IRFI620

MOSFET N-CH 200V 4.1A TO220-3

Vishay Siliconix
3,814 -

RFQ

IRFI620

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 4.1A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC20STRLPBF

IRFBC20STRLPBF

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
388 -

RFQ

IRFBC20STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFIZ46G

IRFIZ46G

MOSFET N-CH 50V TO220-3

Vishay Siliconix
3,026 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V - - - - - - - - - - Through Hole
SIHG22N60AEL-GE3

SIHG22N60AEL-GE3

MOSFET N-CH 600V 21A TO247AC

Vishay Siliconix
2,950 -

RFQ

SIHG22N60AEL-GE3

Ficha técnica

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 82 nC @ 10 V ±30V 1757 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM120N02-1M3L_GE3

SQM120N02-1M3L_GE3

MOSFET N-CH 20V 120A TO263

Vishay Siliconix
712 -

RFQ

SQM120N02-1M3L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 120A (Tc) 4.5V, 10V 1.3mOhm @ 40A, 10V 2.5V @ 250µA 290 nC @ 10 V ±20V 14500 pF @ 10 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBC30STRLPBF

IRFBC30STRLPBF

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,616 -

RFQ

IRFBC30STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44RSTRR

IRFZ44RSTRR

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
3,124 -

RFQ

IRFZ44RSTRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ46L

IRFZ46L

MOSFET N-CH 50V 50A D2PAK

Vishay Siliconix
2,341 -

RFQ

IRFZ46L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 50A (Tc) 10V 24mOhm @ 32A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 1800 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLL1503TR

IRLL1503TR

MOSFET N-CH 30V SOT223

Vishay Siliconix
3,622 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V - - - - - - - - - - Surface Mount
IRLL1905TR

IRLL1905TR

MOSFET N-CH 55V 1.6A SOT223

Vishay Siliconix
3,693 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 55 V 1.6A (Ta) - - - - - - - - - Surface Mount
SIHB22N60AEL-GE3

SIHB22N60AEL-GE3

MOSFET N-CH 600V 21A D2PAK

Vishay Siliconix
2,988 -

RFQ

SIHB22N60AEL-GE3

Ficha técnica

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 82 nC @ 10 V ±30V 1757 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHH21N60EF-T1-GE3

SIHH21N60EF-T1-GE3

MOSFET N-CH 600V 19A PPAK 8 X 8

Vishay Siliconix
2,372 -

RFQ

SIHH21N60EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 185mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 2035 pF @ 100 V - 174W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP30N60AEL-GE3

SIHP30N60AEL-GE3

MOSFET N-CH 600V 28A TO220AB

Vishay Siliconix
3,206 -

RFQ

SIHP30N60AEL-GE3

Ficha técnica

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 120mOhm @ 15A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2565 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA30N60AEL-GE3

SIHA30N60AEL-GE3

MOSFET N-CH 600V 28A TO220

Vishay Siliconix
2,576 -

RFQ

SIHA30N60AEL-GE3

Ficha técnica

Tube EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 120mOhm @ 15A, 10V 4V @ 250µA 120 nC @ 10 V ±30V 2565 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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