Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI2377EDS-T1-GE3

SI2377EDS-T1-GE3

MOSFET P-CH 20V 4.4A SOT23-3

Vishay Siliconix
3,885 -

RFQ

SI2377EDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Tc) 1.5V, 4.5V 61mOhm @ 3.2A, 4.5V 1V @ 250µA 21 nC @ 8 V ±8V - - 1.25W (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8812DB-T2-E1

SI8812DB-T2-E1

MOSFET N-CH 20V 4MICROFOOT

Vishay Siliconix
2,760 -

RFQ

SI8812DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.3A (Ta) 1.2V, 4.5V 59mOhm @ 1A, 4.5V 1V @ 250µA 17 nC @ 8 V ±5V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1302DL-T1-GE3

SI1302DL-T1-GE3

MOSFET N-CH 30V 600MA SC70-3

Vishay Siliconix
2,867 -

RFQ

SI1302DL-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 600mA (Ta) 4.5V, 10V 480mOhm @ 600mA, 10V 3V @ 250µA 1.4 nC @ 10 V ±20V - - 280mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
V50382-E3

V50382-E3

MOSFET N-CH 60V TO-247AC

Vishay Siliconix
2,685 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
V961-0007-E3

V961-0007-E3

MOSFET N-CH TO-247AC

Vishay Siliconix
2,198 -

RFQ

Tube * Obsolete - - - - - - - - - - - - - -
V50383-E3

V50383-E3

MOSFET N-CH 60V TO-247AC 80MIL

Vishay Siliconix
2,932 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
SQM120N04-1M9_GE3

SQM120N04-1M9_GE3

MOSFET N-CH 40V 120A TO263

Vishay Siliconix
3,354 -

RFQ

SQM120N04-1M9_GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.9mOhm @ 30A, 10V 3.5V @ 250µA 270 nC @ 10 V ±20V 8790 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP22N60AE-GE3

SIHP22N60AE-GE3

MOSFET N-CH 600V 20A TO220AB

Vishay Siliconix
3,335 -

RFQ

SIHP22N60AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM120N04-1M7_GE3

SQM120N04-1M7_GE3

MOSFET N-CH 40V 120A TO263

Vishay Siliconix
3,121 -

RFQ

SQM120N04-1M7_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.7mOhm @ 30A, 10V 3.5V @ 250µA 310 nC @ 10 V ±20V 17350 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHB11N80E-GE3

SIHB11N80E-GE3

MOSFET N-CH 800V 12A D2PAK

Vishay Siliconix
3,707 -

RFQ

SIHB11N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3429EDV-T1-GE3

SI3429EDV-T1-GE3

MOSFET P-CH 20V 8A/8A 6TSOP

Vishay Siliconix
3,670 -

RFQ

SI3429EDV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta), 8A (Tc) 1.8V, 4.5V 21mOhm @ 4A, 4.5V 1V @ 250µA 118 nC @ 10 V ±8V 4085 pF @ 50 V - 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI5468DC-T1-GE3

SI5468DC-T1-GE3

MOSFET N-CH 30V 6A 1206-8

Vishay Siliconix
3,000 -

RFQ

SI5468DC-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Tc) 4.5V, 10V 28mOhm @ 6.8A, 10V 2.5V @ 250µA 12 nC @ 10 V ±20V 435 pF @ 15 V - 2.3W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB22N60AE-GE3

SIHB22N60AE-GE3

MOSFET N-CH 600V 20A D2PAK

Vishay Siliconix
3,768 -

RFQ

SIHB22N60AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1013CX-T1-GE3

SI1013CX-T1-GE3

MOSFET P-CH 20V 450MA SC89-3

Vishay Siliconix
2,920 -

RFQ

SI1013CX-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 450mA (Ta) 4.5V 760mOhm @ 400mA, 4.5V 1V @ 250µA 2.5 nC @ 4.5 V ±8V 45 pF @ 10 V - 190mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIE818DF-T1-GE3

SIE818DF-T1-GE3

MOSFET N-CH 75V 60A 10POLARPAK

Vishay Siliconix
3,028 -

RFQ

SIE818DF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 75 V 60A (Tc) 4.5V, 10V 9.5mOhm @ 16A, 10V 3V @ 250µA 95 nC @ 10 V ±20V 3200 pF @ 38 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE808DF-T1-GE3

SIE808DF-T1-GE3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix
2,423 -

RFQ

SIE808DF-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 1.6mOhm @ 25A, 10V 3V @ 250µA 155 nC @ 10 V ±20V 8800 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1070X-T1-GE3

SI1070X-T1-GE3

MOSFET N-CH 30V 1.2A SC89-6

Vishay Siliconix
2,999 -

RFQ

SI1070X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 1.2A (Ta) 2.5V, 4.5V 99mOhm @ 1.2A, 4.5V 1.55V @ 250µA 8.3 nC @ 5 V ±12V 385 pF @ 15 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ1464EEH-T1_GE3

SQ1464EEH-T1_GE3

MOSFET N-CH 60V 440MA SC70-6

Vishay Siliconix
17,336 -

RFQ

SQ1464EEH-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 440mA (Tc) 1.5V 1.41Ohm @ 2A, 1.5V 1V @ 250µA 4.1 nC @ 4.5 V ±8V 140 pF @ 25 V - 430mW (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI2302CDS-T1-GE3

SI2302CDS-T1-GE3

MOSFET N-CH 20V 2.6A SOT23-3

Vishay Siliconix
301 -

RFQ

SI2302CDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 2.5V, 4.5V 57mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5 nC @ 4.5 V ±8V - - 710mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SISA35DN-T1-GE3

SISA35DN-T1-GE3

MOSFET P-CH 30V 10A/16A PPAK

Vishay Siliconix
1,739 -

RFQ

SISA35DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 16A (Tc) 4.5V, 10V 19mOhm @ 9A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1500 pF @ 15 V - 3.2W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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