Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIE810DF-T1-E3

SIE810DF-T1-E3

MOSFET N-CH 20V 60A 10POLARPAK

Vishay Siliconix
2,786 -

RFQ

SIE810DF-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 2.5V, 10V 1.4mOhm @ 25A, 10V 2V @ 250µA 300 nC @ 10 V ±12V 13000 pF @ 10 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE812DF-T1-E3

SIE812DF-T1-E3

MOSFET N-CH 40V 60A 10POLARPAK

Vishay Siliconix
3,563 -

RFQ

SIE812DF-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.6mOhm @ 25A, 10V 3V @ 250µA 170 nC @ 10 V ±20V 8300 pF @ 20 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIUD412ED-T1-GE3

SIUD412ED-T1-GE3

MOSFET N-CH 12V 500MA PPAK 0806

Vishay Siliconix
258 -

RFQ

SIUD412ED-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 500mA (Tc) 1.2V, 4.5V 340mOhm @ 500mA, 4.5V 900mV @ 250µA 0.71 nC @ 4.5 V ±5V 21 pF @ 6 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQM120N10-09_GE3

SQM120N10-09_GE3

MOSFET N-CH 100V 120A TO263

Vishay Siliconix
3,333 -

RFQ

SQM120N10-09_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 9.5mOhm @ 30A, 10V 3.5V @ 250µA 180 nC @ 10 V ±20V 8645 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQP60N06-15_GE3

SQP60N06-15_GE3

MOSFET N-CH 60V 56A TO220AB

Vishay Siliconix
3,800 -

RFQ

SQP60N06-15_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 10V 15mOhm @ 30A, 10V 3.5V @ 250µA 50 nC @ 10 V ±20V 2480 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP186N60EF-GE3

SIHP186N60EF-GE3

MOSFET N-CH 600V 18A TO220AB

Vishay Siliconix
2,685 -

RFQ

SIHP186N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQS423ENW-T1_GE3

SQS423ENW-T1_GE3

MOSFET P-CH 30V 16A PPAK 1212-8W

Vishay Siliconix
2,891 -

RFQ

SQS423ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 21mOhm @ 12A, 10V 2.5V @ 250µA 26 nC @ 4.5 V ±20V 1975 pF @ 15 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF22N60E-E3

SIHF22N60E-E3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix
2,848 -

RFQ

SIHF22N60E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) - 180mOhm @ 11A, 10V 4V @ 250µA 86 nC @ 10 V - 1920 pF @ 100 V - - - Through Hole
SQP100P06-9M3L_GE3

SQP100P06-9M3L_GE3

MOSFET P-CH 60V 100A TO220AB

Vishay Siliconix
3,406 -

RFQ

SQP100P06-9M3L_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 4.5V, 10V 9.3mOhm @ 30A, 10V 2.5V @ 250µA 300 nC @ 10 V ±20V 12010 pF @ 25 V - 187W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHB15N65E-GE3

SIHB15N65E-GE3

MOSFET N-CH 650V 15A TO263

Vishay Siliconix
3,709 -

RFQ

SIHB15N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFIBF30GPBF

IRFIBF30GPBF

MOSFET N-CH 900V 1.9A TO220-3

Vishay Siliconix
2,214 -

RFQ

IRFIBF30GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.9A (Tc) 10V 3.7Ohm @ 1.1A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA22N60AE-E3

SIHA22N60AE-E3

MOSFET N-CHANNEL 600V 20A TO220

Vishay Siliconix
2,199 -

RFQ

SIHA22N60AE-E3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG14N50D-E3

SIHG14N50D-E3

MOSFET N-CH 500V 14A TO247AC

Vishay Siliconix
3,166 -

RFQ

SIHG14N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 1144 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHG20N50E-GE3

SIHG20N50E-GE3

MOSFET N-CH 500V 19A TO247AC

Vishay Siliconix
2,971 -

RFQ

SIHG20N50E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF15N65E-GE3

SIHF15N65E-GE3

MOSFET N-CH 650V 15A TO220

Vishay Siliconix
3,878 -

RFQ

SIHF15N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHH14N60E-T1-GE3

SIHH14N60E-T1-GE3

MOSFET N-CH 600V 16A PPAK 8 X 8

Vishay Siliconix
3,993 -

RFQ

SIHH14N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 255mOhm @ 7A, 10V 4V @ 250µA 82 nC @ 10 V ±30V 1416 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE802DF-T1-E3

SIE802DF-T1-E3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix
2,928 -

RFQ

SIE802DF-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.9mOhm @ 23.6A, 10V 2.7V @ 250µA 160 nC @ 10 V ±20V 7000 pF @ 15 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIE802DF-T1-GE3

SIE802DF-T1-GE3

MOSFET N-CH 30V 60A 10POLARPAK

Vishay Siliconix
2,627 -

RFQ

SIE802DF-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 1.9mOhm @ 23.6A, 10V 2.7V @ 250µA 160 nC @ 10 V ±20V 7000 pF @ 15 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQC40016E_DFFR

SQC40016E_DFFR

N-CHANNEL 40-V (D-S) MOSFET

Vishay Siliconix
2,055 -

RFQ

Bulk - Active - - - - - - - - - - - - - -
SI2304DDS-T1-GE3

SI2304DDS-T1-GE3

MOSFET N-CH 30V 3.3A/3.6A SOT23

Vishay Siliconix
2,311 -

RFQ

SI2304DDS-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 3.3A (Ta), 3.6A (Tc) 4.5V, 10V 60mOhm @ 3.2A, 10V 2.2V @ 250µA 6.7 nC @ 10 V ±20V 235 pF @ 15 V - 1.1W (Ta), 1.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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