Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF740ASTRRPBF

IRF740ASTRRPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
3,674 -

RFQ

IRF740ASTRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740STRRPBF

IRF740STRRPBF

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
2,786 -

RFQ

IRF740STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQP120N06-06_GE3

SQP120N06-06_GE3

MOSFET N-CH 60V 119A TO220AB

Vishay Siliconix
2,133 -

RFQ

SQP120N06-06_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 119A (Tc) 10V 6mOhm @ 30A, 10V 3.5V @ 250µA 145 nC @ 10 V ±20V 6495 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQP120N10-09_GE3

SQP120N10-09_GE3

MOSFET N-CH 100V 120A TO220AB

Vishay Siliconix
2,156 -

RFQ

SQP120N10-09_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 9.5mOhm @ 30A, 10V 3.5V @ 250µA 180 nC @ 10 V ±20V 8645 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL640STRRPBF

IRL640STRRPBF

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix
3,493 -

RFQ

IRL640STRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840LCSTRRPBF

IRF840LCSTRRPBF

MOSFET N-CH 500V 8A TO263AB

Vishay Siliconix
3,683 -

RFQ

IRF840LCSTRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA180N60E-GE3

SIHA180N60E-GE3

MOSFET N-CH 600V 19A TO220

Vishay Siliconix
2,531 -

RFQ

SIHA180N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB18N60E-GE3

SIHB18N60E-GE3

MOSFET N-CH 600V 18A TO263

Vishay Siliconix
2,000 -

RFQ

SIHB18N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 202mOhm @ 9A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP17N60D-E3

SIHP17N60D-E3

MOSFET N-CH 600V 17A TO220AB

Vishay Siliconix
2,662 -

RFQ

SIHP17N60D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP17N60D-GE3

SIHP17N60D-GE3

MOSFET N-CH 600V 17A TO220AB

Vishay Siliconix
3,681 -

RFQ

SIHP17N60D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 1780 pF @ 100 V - 277.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4408DY-T1-GE3

SI4408DY-T1-GE3

MOSFET N-CH 20V 14A 8SO

Vishay Siliconix
3,422 -

RFQ

SI4408DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 14A (Ta) 4.5V, 10V 4.5mOhm @ 21A, 10V 1V @ 250µA (Min) 32 nC @ 4.5 V ±20V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4776DY-T1-GE3

SI4776DY-T1-GE3

MOSFET N-CHANNEL 30V 11.9A 8SO

Vishay Siliconix
1,146 -

RFQ

SI4776DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.9A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V 2.3V @ 1mA 17.5 nC @ 10 V ±20V 521 pF @ 15 V - 4.1W (Tc) -55°C ~ 150°C (TA) Surface Mount
SI4862DY-T1-E3

SI4862DY-T1-E3

MOSFET N-CH 16V 17A 8SO

Vishay Siliconix
3,778 -

RFQ

SI4862DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 16 V 17A (Ta) 2.5V, 4.5V 3.3mOhm @ 25A, 4.5V 600mV @ 250µA (Min) 70 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQM200N04-1M8_GE3

SQM200N04-1M8_GE3

MOSFET N-CH 40V 200A TO263-7

Vishay Siliconix
2,999 -

RFQ

SQM200N04-1M8_GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 10V 1.8mOhm @ 30A, 10V 3.5V @ 250µA 310 nC @ 10 V ±20V 17350 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHB180N60E-GE3

SIHB180N60E-GE3

MOSFET N-CH 600V 19A D2PAK

Vishay Siliconix
2,338 -

RFQ

SIHB180N60E-GE3

Ficha técnica

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 180mOhm @ 9.5A, 10V 5V @ 250µA 33 nC @ 10 V ±30V 1085 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ44STRRPBF

IRLZ44STRRPBF

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,322 -

RFQ

IRLZ44STRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SUM60030E-GE3

SUM60030E-GE3

MOSFET N-CH 80V 120A TO263

Vishay Siliconix
2,595 -

RFQ

SUM60030E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 7.5V, 10V 3.2mOhm @ 30A, 10V 4V @ 250µA 141 nC @ 10 V ±20V 7910 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF23N60E-GE3

SIHF23N60E-GE3

MOSFET N-CH 600V 23A TO220

Vishay Siliconix
3,426 -

RFQ

SIHF23N60E-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB25N50E-GE3

SIHB25N50E-GE3

MOSFET N-CH 500V 26A TO263

Vishay Siliconix
2,922 -

RFQ

SIHB25N50E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9640LPBF

IRF9640LPBF

MOSFET P-CH 200V 11A I2PAK

Vishay Siliconix
2,123 -

RFQ

IRF9640LPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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