Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF720STRRPBF

IRF720STRRPBF

MOSFET N-CH 400V 3.3A D2PAK

Vishay Siliconix
3,054 -

RFQ

IRF720STRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9220TRRPBF

IRFR9220TRRPBF

MOSFET P-CH 200V 3.6A DPAK

Vishay Siliconix
2,455 -

RFQ

IRFR9220TRRPBF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7104DN-T1-GE3

SI7104DN-T1-GE3

MOSFET N-CH 12V 35A PPAK 1212-8

Vishay Siliconix
3,613 -

RFQ

SI7104DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 35A (Tc) 2.5V, 4.5V 3.7mOhm @ 26.1A, 4.5V 1.8V @ 250µA 70 nC @ 10 V ±12V 2800 pF @ 6 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8401DB-T1-E3

SI8401DB-T1-E3

MOSFET P-CH 20V 3.6A 4MICROFOOT

Vishay Siliconix
2,698 -

RFQ

SI8401DB-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 2.5V, 4.5V 65mOhm @ 1A, 4.5V 1.4V @ 250µA 17 nC @ 4.5 V ±12V - - 1.47W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR9220PBF-BE3

IRFR9220PBF-BE3

P-CHANNEL 200V

Vishay Siliconix
2,652 -

RFQ

IRFR9220PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 340 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7450DP-T1-RE3

SI7450DP-T1-RE3

N-CHANNEL 200-V (D-S) MOSFET

Vishay Siliconix
3,839 -

RFQ

Tape & Reel (TR) - Active - - - 3.2A (Ta), 19.8A (Tc) - - - - - - - - - -
IRL530STRRPBF

IRL530STRRPBF

MOSFET N-CH 100V 15A D2PAK

Vishay Siliconix
3,514 -

RFQ

IRL530STRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 4V, 5V 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI7454DP-T1-GE3

SI7454DP-T1-GE3

MOSFET N-CH 100V 5A PPAK SO-8

Vishay Siliconix
3,219 -

RFQ

SI7454DP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5A (Ta) 6V, 10V 34mOhm @ 7.8A, 10V 4V @ 250µA 30 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF730APBF-BE3

IRF730APBF-BE3

MOSFET N-CH 400V 5.5A TO220AB

Vishay Siliconix
1,672 -

RFQ

IRF730APBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) - 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP21N80AEF-GE3

SIHP21N80AEF-GE3

E SERIES POWER MOSFET WITH FAST

Vishay Siliconix
1,015 -

RFQ

SIHP21N80AEF-GE3

Ficha técnica

Bulk EF Active N-Channel MOSFET (Metal Oxide) 800 V 16.3A (Tc) 10V 250mOhm @ 8.5A, 10V 4V @ 250µA 71 nC @ 10 V ±30V 1511 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM40022E_GE3

SQM40022E_GE3

MOSFET N-CH 40V 150A TO263

Vishay Siliconix
2,032 -

RFQ

SQM40022E_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 150A (Tc) 10V 1.63mOhm @ 35A, 10V 3.5V @ 250µA 160 nC @ 10 V ±20V 9200 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF620STRRPBF

IRF620STRRPBF

MOSFET N-CH 200V 5.2A D2PAK

Vishay Siliconix
2,628 -

RFQ

IRF620STRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) 10V 800mOhm @ 3.1A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 3W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730SPBF

IRF730SPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
3,435 -

RFQ

IRF730SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830LPBF

IRF830LPBF

MOSFET N-CH 500V 4.5A TO262-3

Vishay Siliconix
3,292 -

RFQ

IRF830LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIR872ADP-T1-RE3

SIR872ADP-T1-RE3

MOSFET N-CH 150V 53.7A PPAK SO-8

Vishay Siliconix
2,046 -

RFQ

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 53.7A (Tc) 7.5V, 10V 18mOhm @ 20A, 10V 4.5V @ 250µA 47 nC @ 10 V ±20V 1286 pF @ 75 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB4N80E-GE3

SIHB4N80E-GE3

MOSFET N-CH 800V 4.3A D2PAK

Vishay Siliconix
3,520 -

RFQ

SIHB4N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44PBF-BE3

IRFZ44PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
1,716 -

RFQ

IRFZ44PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHA22N60AE-GE3

SIHA22N60AE-GE3

N-CHANNEL 600V

Vishay Siliconix
1,000 -

RFQ

SIHA22N60AE-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 8A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 96 nC @ 10 V ±30V 1451 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB12N60ET1-GE3

SIHB12N60ET1-GE3

MOSFET N-CH 600V 12A TO263

Vishay Siliconix
3,113 -

RFQ

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB12N60ET5-GE3

SIHB12N60ET5-GE3

MOSFET N-CH 600V 12A TO263

Vishay Siliconix
2,795 -

RFQ

Bulk E Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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