Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIRA00DP-T1-RE3

SIRA00DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix
3,226 -

RFQ

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1mOhm @ 20A, 10V 2.2V @ 250µA 220 nC @ 10 V +20V, -16V 11700 pF @ 15 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF610LPBF

IRF610LPBF

MOSFET N-CH 200V 3.3A I2PAK

Vishay Siliconix
3,191 -

RFQ

IRF610LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7114DN-T1-GE3

SI7114DN-T1-GE3

MOSFET N-CH 30V 11.7A PPAK1212-8

Vishay Siliconix
2,797 -

RFQ

SI7114DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11.7A (Ta) 4.5V, 10V 7.5mOhm @ 18.3A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHFU310-GE3

SIHFU310-GE3

MOSFET N-CHANNEL 400V

Vishay Siliconix
2,970 -

RFQ

SIHFU310-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR120TRRPBF-BE3

IRFR120TRRPBF-BE3

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
4,140 -

RFQ

IRFR120TRRPBF-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) - 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR120TRLPBF-BE3

IRFR120TRLPBF-BE3

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
3,000 -

RFQ

IRFR120TRLPBF-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) - 270mOhm @ 4.6A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR014TRLPBF-BE3

IRFR014TRLPBF-BE3

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
3,000 -

RFQ

IRFR014TRLPBF-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) - 200mOhm @ 4.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z14LPBF

IRF9Z14LPBF

MOSFET P-CH 60V 6.7A I2PAK

Vishay Siliconix
3,386 -

RFQ

IRF9Z14LPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBC30ALPBF

IRFBC30ALPBF

MOSFET N-CH 600V 3.6A I2PAK

Vishay Siliconix
2,716 -

RFQ

IRFBC30ALPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4634DY-T1-GE3

SI4634DY-T1-GE3

MOSFET N-CH 30V 24.5A 8SO

Vishay Siliconix
3,458 -

RFQ

SI4634DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24.5A (Tc) 4.5V, 10V 5.2mOhm @ 15A, 10V 2.6V @ 250µA 68 nC @ 10 V ±20V 3150 pF @ 15 V - 2.5W (Ta), 5.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD7N60ET4-GE3

SIHD7N60ET4-GE3

MOSFET N-CH 600V 7A TO252AA

Vishay Siliconix
3,139 -

RFQ

SIHD7N60ET4-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD7N60ET5-GE3

SIHD7N60ET5-GE3

MOSFET N-CH 600V 7A TO252AA

Vishay Siliconix
3,322 -

RFQ

SIHD7N60ET5-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9120PBF-BE3

IRFR9120PBF-BE3

P-CHANNEL 100V

Vishay Siliconix
3,195 -

RFQ

IRFR9120PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQD10N30-330H_4GE3

SQD10N30-330H_4GE3

N-CHANNEL 300-V (D-S) 175C MOSFE

Vishay Siliconix
4,678 -

RFQ

SQD10N30-330H_4GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 300 V 10A (Tc) 10V 330mOhm @ 14A, 10V 4.4V @ 250µA 47 nC @ 10 V ±30V 2190 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR320TRRPBF

IRFR320TRRPBF

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix
3,556 -

RFQ

IRFR320TRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR320PBF-BE3

IRFR320PBF-BE3

N-CHANNEL 400V

Vishay Siliconix
3,753 -

RFQ

IRFR320PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR320TRPBF-BE3

IRFR320TRPBF-BE3

N-CHANNEL 400V

Vishay Siliconix
2,096 -

RFQ

IRFR320TRPBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP10N40D-E3

SIHP10N40D-E3

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
3,348 -

RFQ

SIHP10N40D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 600mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 526 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4413CDY-T1-GE3

SI4413CDY-T1-GE3

MOSFET P-CH 30V 8-SOIC

Vishay Siliconix
2,768 -

RFQ

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 30 V - - - - - - - - - - Surface Mount
IRFRC20TRRPBF

IRFRC20TRRPBF

MOSFET N-CH 600V 2A DPAK

Vishay Siliconix
3,005 -

RFQ

IRFRC20TRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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