Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFRC20PBF-BE3

IRFRC20PBF-BE3

N-CHANNEL 600V

Vishay Siliconix
3,061 -

RFQ

IRFRC20PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 4.4Ohm @ 1.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF820LPBF

IRF820LPBF

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix
3,743 -

RFQ

IRF820LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHU7N60E-GE3

SIHU7N60E-GE3

MOSFET N-CH 600V 7A IPAK

Vishay Siliconix
2,214 -

RFQ

SIHU7N60E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 600mOhm @ 3.5A, 10V 4V @ 250µA 40 nC @ 10 V ±30V 680 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4427BDY-T1-GE3

SI4427BDY-T1-GE3

MOSFET P-CH 30V 9.7A 8SO

Vishay Siliconix
3,841 -

RFQ

SI4427BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 9.7A (Ta) 10V 10.5mOhm @ 12.6A, 10V 1.4V @ 250µA 70 nC @ 4.5 V ±12V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQS423EN-T1_BE3

SQS423EN-T1_BE3

MOSFET P-CH 30V 16A POWERPAK1212

Vishay Siliconix
2,402 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 21mOhm @ 12A, 10V 2.5V @ 250µA 26 nC @ 4.5 V ±20V 1975 pF @ 15 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ14STRRPBF

IRLZ14STRRPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
2,738 -

RFQ

IRLZ14STRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHA690N60E-GE3

SIHA690N60E-GE3

MOSFET N-CH 600V 4.3A TO220

Vishay Siliconix
3,370 -

RFQ

SIHA690N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 4.3A (Tc) 10V 700mOhm @ 2A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 347 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ14STRLPBF

IRFZ14STRLPBF

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
2,528 -

RFQ

IRFZ14STRLPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 10V 200mOhm @ 6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR846ADP-T1-RE3

SIR846ADP-T1-RE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
2,102 -

RFQ

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 6V, 10V 7.8mOhm @ 20A, 10V 3V @ 250µA 66 nC @ 10 V ±20V 2350 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9024PBF-BE3

IRFR9024PBF-BE3

P-CHANNEL 60V

Vishay Siliconix
3,537 -

RFQ

IRFR9024PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 280mOhm @ 5.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR110PBF-BE3

IRFR110PBF-BE3

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
2,980 -

RFQ

IRFR110PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) - 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR430ATRLPBF

IRFR430ATRLPBF

MOSFET N-CH 500V 5A DPAK

Vishay Siliconix
3,019 -

RFQ

IRFR430ATRLPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.7Ohm @ 3A, 10V 4.5V @ 250µA 24 nC @ 10 V ±30V 490 pF @ 25 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9020TRLPBF

IRFR9020TRLPBF

MOSFET P-CH 50V 9.9A DPAK

Vishay Siliconix
2,766 -

RFQ

IRFR9020TRLPBF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLZ24SPBF

IRLZ24SPBF

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,230 -

RFQ

IRLZ24SPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 4V, 5V 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF720LPBF

IRF720LPBF

MOSFET N-CH 400V 3.3A TO262-3

Vishay Siliconix
2,298 -

RFQ

IRF720LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF9640S-GE3

SIHF9640S-GE3

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix
2,188 -

RFQ

SIHF9640S-GE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHU4N80E-GE3

SIHU4N80E-GE3

MOSFET N-CH 800V 4.3A IPAK

Vishay Siliconix
2,305 -

RFQ

SIHU4N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.3A (Tc) 10V 1.27Ohm @ 2A, 10V 4V @ 250µA 32 nC @ 10 V ±30V 622 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7720DN-T1-GE3

SI7720DN-T1-GE3

MOSFET N-CH 30V 12A PPAK1212-8

Vishay Siliconix
3,539 -

RFQ

SI7720DN-T1-GE3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 12A (Tc) 4.5V, 10V 12.5mOhm @ 10A, 10V 2.5V @ 250µA 45 nC @ 10 V ±20V 1790 pF @ 15 V - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIHD5N80AE-GE3

SIHD5N80AE-GE3

E SERIES POWER MOSFET DPAK (TO-2

Vishay Siliconix
2,893 -

RFQ

SIHD5N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 4.4A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF710PBF-BE3

IRF710PBF-BE3

MOSFET N-CH 400V 2A TO220AB

Vishay Siliconix
2,498 -

RFQ

IRF710PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) - 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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