Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHFS11N50A-GE3

SIHFS11N50A-GE3

MOSFET N-CH 500V 11A TO263

Vishay Siliconix
3,606 -

RFQ

SIHFS11N50A-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 11A (Tc) 10V 520mOhm @ 6.6A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA5N80AE-GE3

SIHA5N80AE-GE3

E SERIES POWER MOSFET THIN-LEAD

Vishay Siliconix
1,037 -

RFQ

SIHA5N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 1.35Ohm @ 1.5A, 10V 4V @ 250µA 16.5 nC @ 10 V ±30V 321 pF @ 100 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR214PBF-BE3

IRFR214PBF-BE3

MOSFET N-CH 250V 2.2A DPAK

Vishay Siliconix
3,000 -

RFQ

IRFR214PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) - 2Ohm @ 1.3A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL520PBF-BE3

IRL520PBF-BE3

MOSFET N-CH 100V 9.2A TO220AB

Vishay Siliconix
1,359 -

RFQ

IRL520PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 9.2A (Tc) - 270mOhm @ 5.5A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIR494DP-T1-GE3

SIR494DP-T1-GE3

MOSFET N-CH 12V 60A PPAK SO-8

Vishay Siliconix
2,636 -

RFQ

SIR494DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 60A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 6900 pF @ 6 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7328DN-T1-GE3

SI7328DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix
2,533 -

RFQ

SI7328DN-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6.6mOhm @ 18.9A, 10V 1.5V @ 250µA 31.5 nC @ 4.5 V ±12V 2610 pF @ 15 V - 3.78W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI4626ADY-T1-E3

SI4626ADY-T1-E3

MOSFET N-CH 30V 30A 8SO

Vishay Siliconix
3,871 -

RFQ

SI4626ADY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 5370 pF @ 15 V - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4626ADY-T1-GE3

SI4626ADY-T1-GE3

MOSFET N-CH 30V 30A 8SO

Vishay Siliconix
3,756 -

RFQ

SI4626ADY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 3.3mOhm @ 15A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 5370 pF @ 15 V - 3W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7104DN-T1-E3

SI7104DN-T1-E3

MOSFET N-CH 12V 35A PPAK 1212-8

Vishay Siliconix
3,166 -

RFQ

SI7104DN-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 35A (Tc) 2.5V, 4.5V 3.7mOhm @ 26.1A, 4.5V 1.8V @ 250µA 70 nC @ 10 V ±12V 2800 pF @ 6 V - 3.8W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7328DN-T1-E3

SI7328DN-T1-E3

MOSFET N-CH 30V 35A PPAK 1212-8

Vishay Siliconix
2,564 -

RFQ

SI7328DN-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6.6mOhm @ 18.9A, 10V 1.5V @ 250µA 31.5 nC @ 4.5 V ±12V 2610 pF @ 15 V - 3.78W (Ta), 52W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SIHP6N65E-GE3

SIHP6N65E-GE3

MOSFET N-CH 650V 7A TO220AB

Vishay Siliconix
2,605 -

RFQ

SIHP6N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUD35N10-26P-T4GE3

SUD35N10-26P-T4GE3

MOSFET N-CH 100V 35A TO252

Vishay Siliconix
3,187 -

RFQ

SUD35N10-26P-T4GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 7V, 10V 26mOhm @ 12A, 10V 4.4V @ 250µA 47 nC @ 10 V ±20V 2000 pF @ 12 V - 8.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR826DP-T1-RE3

SIR826DP-T1-RE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix
2,618 -

RFQ

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.8V @ 250µA 90 nC @ 10 V ±20V 2900 pF @ 40 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFZ48RS-GE3

SIHFZ48RS-GE3

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
3,545 -

RFQ

SIHFZ48RS-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1N60APBF-BE3

IRFR1N60APBF-BE3

MOSFET N-CH 600V 1.4A DPAK

Vishay Siliconix
3,000 -

RFQ

IRFR1N60APBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) - 7Ohm @ 840mA, 10V 4V @ 250µA 14 nC @ 10 V ±30V 229 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4866DY-T1-GE3

SI4866DY-T1-GE3

MOSFET N-CH 12V 11A 8SO

Vishay Siliconix
3,674 -

RFQ

SI4866DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 12 V 11A (Ta) 2.5V, 4.5V 5.5mOhm @ 17A, 4.5V 600mV @ 250µA (Min) 30 nC @ 4.5 V ±8V - - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHA15N50E-E3

SIHA15N50E-E3

MOSFET N-CH 500V 14.5A TO220

Vishay Siliconix
2,524 -

RFQ

SIHA15N50E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHFZ48S-GE3

SIHFZ48S-GE3

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
3,596 -

RFQ

SIHFZ48S-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF840LCPBF-BE3

IRF840LCPBF-BE3

MOSFET N-CHANNEL 500V

Vishay Siliconix
2,407 -

RFQ

IRF840LCPBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL530PBF-BE3

IRL530PBF-BE3

MOSFET N-CH 100V 15A TO220AB

Vishay Siliconix
1,305 -

RFQ

IRL530PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) - 160mOhm @ 9A, 5V 2V @ 250µA 28 nC @ 5 V ±10V 930 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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