Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIDR608DP-T1-RE3

SIDR608DP-T1-RE3

MOSFET N-CH 45V 51A/208A PPAK

Vishay Siliconix
2,636 -

RFQ

SIDR608DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 45 V 51A (Ta), 208A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V 2.3V @ 250µA 167 nC @ 10 V +20V, -16V 8900 pF @ 20 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP6N80E-GE3

SIHP6N80E-GE3

MOSFET N-CH 800V 5.4A TO220AB

Vishay Siliconix
3,757 -

RFQ

SIHP6N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9540PBF-BE3

IRF9540PBF-BE3

MOSFET P-CH 100V 19A TO220AB

Vishay Siliconix
3,908 -

RFQ

IRF9540PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) - 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI540GPBF

IRLI540GPBF

MOSFET N-CH 100V 17A TO220-3

Vishay Siliconix
507 -

RFQ

IRLI540GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 5V 77mOhm @ 10A, 5V 2V @ 250µA 64 nC @ 5 V ±10V 2200 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP15N50E-BE3

SIHP15N50E-BE3

N-CHANNEL 500V

Vishay Siliconix
1,988 -

RFQ

SIHP15N50E-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA21N60EF-GE3

SIHA21N60EF-GE3

N-CHANNEL 600V

Vishay Siliconix
1,000 -

RFQ

SIHA21N60EF-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHF6N65E-GE3

SIHF6N65E-GE3

MOSFET N-CH 650V 7A TO220

Vishay Siliconix
2,344 -

RFQ

SIHF6N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF20LPBF

IRFBF20LPBF

MOSFET N-CH 900V 1.7A I2PAK

Vishay Siliconix
3,025 -

RFQ

IRFBF20LPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40PBF-BE3

IRFBC40PBF-BE3

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
1,029 -

RFQ

IRFBC40PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) - 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIE882DF-T1-GE3

SIE882DF-T1-GE3

MOSFET N-CH 25V 60A 10POLARPAK

Vishay Siliconix
3,291 -

RFQ

SIE882DF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 25 V 60A (Tc) 4.5V, 10V 1.4mOhm @ 20A, 10V 2.2V @ 250µA 145 nC @ 10 V ±20V 6400 pF @ 12.5 V - 5.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9520STRRPBF

IRF9520STRRPBF

MOSFET P-CH 100V 6.8A D2PAK

Vishay Siliconix
3,516 -

RFQ

IRF9520STRRPBF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR402DP-T1-GE3

SIDR402DP-T1-GE3

MOSFET N-CH 40V 64.6A/100A PPAK

Vishay Siliconix
3,869 -

RFQ

SIDR402DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 64.6A (Ta), 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 165 nC @ 10 V +20V, -16V 9100 pF @ 20 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z24STRLPBF

IRF9Z24STRLPBF

MOSFET P-CH 60V 11A D2PAK

Vishay Siliconix
3,858 -

RFQ

IRF9Z24STRLPBF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24STRRPBF

IRF9Z24STRRPBF

MOSFET P-CH 60V 11A D2PAK

Vishay Siliconix
2,132 -

RFQ

IRF9Z24STRRPBF

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHJ7N65E-T1-GE3

SIHJ7N65E-T1-GE3

MOSFET N-CH 650V 7.9A PPAK SO-8

Vishay Siliconix
3,088 -

RFQ

SIHJ7N65E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 7.9A (Tc) 10V 598mOhm @ 3.5A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 820 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP15N80AEF-GE3

SIHP15N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
2,999 -

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 350mOhm @ 6.5A, 10V 4V @ 250µA 54 nC @ 10 V ±30V 1128 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7636DP-T1-GE3

SI7636DP-T1-GE3

MOSFET N-CH 30V 17A PPAK SO-8

Vishay Siliconix
3,656 -

RFQ

SI7636DP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta) 4.5V, 10V 4mOhm @ 25A, 10V 3V @ 250µA 50 nC @ 4.5 V ±20V 5600 pF @ 15 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHA25N60EFL-GE3

SIHA25N60EFL-GE3

N-CHANNEL 600V

Vishay Siliconix
1,000 -

RFQ

SIHA25N60EFL-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 146mOhm @ 12.5A, 10V 5V @ 250µA 75 nC @ 10 V ±30V 2274 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9620SPBF

IRF9620SPBF

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix
2,132 -

RFQ

IRF9620SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4413ADY-T1-GE3

SI4413ADY-T1-GE3

MOSFET P-CH 30V 10.5A 8SO

Vishay Siliconix
3,282 -

RFQ

SI4413ADY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 10.5A (Ta) 4.5V, 10V 7.5mOhm @ 13A, 10V 3V @ 250µA 95 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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