Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI4423DY-T1-GE3

SI4423DY-T1-GE3

MOSFET P-CH 20V 10A 8SO

Vishay Siliconix
2,012 -

RFQ

SI4423DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 1.8V, 4.5V 7.5mOhm @ 14A, 4.5V 900mV @ 600µA 175 nC @ 5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7390DP-T1-E3

SI7390DP-T1-E3

MOSFET N-CH 30V 9A PPAK SO-8

Vishay Siliconix
2,215 -

RFQ

SI7390DP-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 15 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7390DP-T1-GE3

SI7390DP-T1-GE3

MOSFET N-CH 30V 9A PPAK SO-8

Vishay Siliconix
3,037 -

RFQ

SI7390DP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 9.5mOhm @ 15A, 10V 3V @ 250µA 15 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIJH440E-T1-GE3

SIJH440E-T1-GE3

MOSFET N-CH 40V 200A PPAK 8 X 8

Vishay Siliconix
2,541 -

RFQ

SIJH440E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Tc) 4.5V, 10V 0.96mOhm @ 20A, 10V 2.3V @ 250µA 195 nC @ 4.5 V +20V, -16V 20330 pF @ 20 V - 158W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF730ASTRLPBF

IRF730ASTRLPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
3,892 -

RFQ

IRF730ASTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4.5V @ 250µA 22 nC @ 10 V ±30V 600 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA17N80E-GE3

SIHA17N80E-GE3

N-CHANNEL 800V

Vishay Siliconix
1,000 -

RFQ

SIHA17N80E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB9N65APBF-BE3

IRFB9N65APBF-BE3

MOSFET N-CH 650V 8.5A TO220AB

Vishay Siliconix
963 -

RFQ

IRFB9N65APBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 8.5A (Tc) - 930mOhm @ 5.1A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1417 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB6N80E-GE3

SIHB6N80E-GE3

MOSFET N-CH 800V 5.4A D2PAK

Vishay Siliconix
3,103 -

RFQ

SIHB6N80E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQP50N06-09L_GE3

SQP50N06-09L_GE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
2,824 -

RFQ

SQP50N06-09L_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 9mOhm @ 20A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 3065 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP15N60E-BE3

SIHP15N60E-BE3

N-CHANNEL 600V

Vishay Siliconix
1,000 -

RFQ

SIHP15N60E-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQM47N10-24L_GE3

SQM47N10-24L_GE3

MOSFET N-CH 100V 47A TO263

Vishay Siliconix
3,204 -

RFQ

SQM47N10-24L_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 47A (Tc) 4.5V, 10V 24mOhm @ 40A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 3620 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF740LCPBF-BE3

IRF740LCPBF-BE3

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
987 -

RFQ

IRF740LCPBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) - 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF730STRRPBF

IRF730STRRPBF

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
3,477 -

RFQ

IRF730STRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4456DY-T1-GE3

SI4456DY-T1-GE3

MOSFET N-CH 40V 33A 8SO

Vishay Siliconix
3,509 -

RFQ

SI4456DY-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 33A (Tc) 4.5V, 10V 3.8mOhm @ 20A, 10V 2.8V @ 250µA 122 nC @ 10 V ±20V 5670 pF @ 20 V - 3.5W (Ta), 7.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA21N80AEF-GE3

SIHA21N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
975 -

RFQ

SIHA21N80AEF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 250mOhm @ 8.5A, 10V 4V @ 250µA 71 nC @ 10 V ±30V 1511 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB15N50E-GE3

SIHB15N50E-GE3

MOSFET N-CH 500V 14.5A D2PAK

Vishay Siliconix
2,795 -

RFQ

SIHB15N50E-GE3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD186N60EF-GE3

SIHD186N60EF-GE3

MOSFET N-CH 600V 19A DPAK

Vishay Siliconix
6,000 -

RFQ

SIHD186N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 19A (Tc) 10V 201mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1118 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR220DP-T1-GE3

SIDR220DP-T1-GE3

MOSFET N-CH 25V 87.7A/100A PPAK

Vishay Siliconix
2,972 -

RFQ

SIDR220DP-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 25 V 87.7A (Ta), 100A (Tc) 4.5V, 10V 5.8mOhm @ 20A, 10V 2.1V @ 250µA 200 nC @ 10 V +16V, -12V 1085 pF @ 10 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP23N60E-BE3

SIHP23N60E-BE3

N-CHANNEL 600V

Vishay Siliconix
1,000 -

RFQ

SIHP23N60E-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±30V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB120N60E-T1-GE3

SIHB120N60E-T1-GE3

N-CHANNEL 600V

Vishay Siliconix
800 -

RFQ

SIHB120N60E-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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