Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHB120N60E-T5-GE3

SIHB120N60E-T5-GE3

N-CHANNEL 600V

Vishay Siliconix
800 -

RFQ

SIHB120N60E-T5-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA24N65EF-GE3

SIHA24N65EF-GE3

N-CHANNEL 650V

Vishay Siliconix
1,000 -

RFQ

SIHA24N65EF-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) E Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tc) 10V 156mOhm @ 12A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2774 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA24N80AE-GE3

SIHA24N80AE-GE3

MOSFET N-CH 800V 9A TO220

Vishay Siliconix
757 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 9A (Tc) - 184mOhm @ 10A, 10V 4V @ 250µA 89 nC @ 10 V ±30V 1836 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP11N80E-BE3

SIHP11N80E-BE3

N-CHANNEL 800V

Vishay Siliconix
958 -

RFQ

SIHP11N80E-BE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4451DY-T1-E3

SI4451DY-T1-E3

MOSFET P-CH 12V 10A 8SO

Vishay Siliconix
2,272 -

RFQ

SI4451DY-T1-E3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 10A (Ta) 1.8V, 4.5V 8.25mOhm @ 14A, 4.5V 800mV @ 850µA 120 nC @ 4.5 V ±8V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7788DP-T1-GE3

SI7788DP-T1-GE3

MOSFET N-CH 30V 50A PPAK SO-8

Vishay Siliconix
2,688 -

RFQ

SI7788DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 3.1mOhm @ 15A, 10V 2.5V @ 250µA 125 nC @ 10 V ±20V 5370 pF @ 15 V - 5.2W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQM25N15-52_GE3

SQM25N15-52_GE3

MOSFET N-CH 150V 25A TO263

Vishay Siliconix
3,566 -

RFQ

SQM25N15-52_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 10V 52mOhm @ 15A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2360 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQP25N15-52_GE3

SQP25N15-52_GE3

MOSFET N-CH 150V 25A TO220AB

Vishay Siliconix
3,252 -

RFQ

SQP25N15-52_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 150 V 25A (Tc) 10V 52mOhm @ 15A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 2360 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SQP50P03-07_GE3

SQP50P03-07_GE3

MOSFET P-CH 30V 50A TO220AB

Vishay Siliconix
3,561 -

RFQ

SQP50P03-07_GE3

Ficha técnica

Tube Automotive, AEC-Q101, TrenchFET® Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.5V @ 250µA 155 nC @ 10 V ±20V 5380 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBF20STRRPBF

IRFBF20STRRPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
2,049 -

RFQ

IRFBF20STRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ34STRLPBF

IRFZ34STRLPBF

MOSFET N-CH 60V 30A D2PAK

Vishay Siliconix
3,563 -

RFQ

IRFZ34STRLPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBF20STRLPBF

IRFBF20STRLPBF

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
3,667 -

RFQ

IRFBF20STRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFZ24STRRPBF

IRFZ24STRRPBF

MOSFET N-CH 60V 17A TO263

Vishay Siliconix
3,645 -

RFQ

IRFZ24STRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ24STRLPBF

IRFZ24STRLPBF

MOSFET N-CH 60V 17A D2PAK

Vishay Siliconix
3,191 -

RFQ

IRFZ24STRLPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFIZ44GPBF

IRFIZ44GPBF

MOSFET N-CH 60V 30A TO220-3

Vishay Siliconix
2,057 -

RFQ

IRFIZ44GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 28mOhm @ 18A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2500 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHF18N50D-E3

SIHF18N50D-E3

MOSFET N-CH 500V 18A TO220

Vishay Siliconix
2,602 -

RFQ

SIHF18N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tc) 10V 280mOhm @ 9A, 10V 5V @ 250µA 76 nC @ 10 V ±30V 1500 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4890DY-T1-E3

SI4890DY-T1-E3

MOSFET N-CH 30V 11A 8-SOIC

Vishay Siliconix
2,124 -

RFQ

SI4890DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V 800mV @ 250µA (Min) 20 nC @ 5 V ±25V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHP14N50D-GE3

SIHP14N50D-GE3

MOSFET N-CH 500V 14A TO220AB

Vishay Siliconix
2,060 -

RFQ

SIHP14N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 400mOhm @ 7A, 10V 5V @ 250µA 58 nC @ 10 V ±30V 1144 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA20N50E-E3

SIHA20N50E-E3

MOSFET N-CH 500V 19A TO220

Vishay Siliconix
3,930 -

RFQ

SIHA20N50E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI7846DP-T1-GE3

SI7846DP-T1-GE3

MOSFET N-CH 150V 4A PPAK SO-8

Vishay Siliconix
3,468 -

RFQ

SI7846DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta) 10V 50mOhm @ 5A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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