Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHD6N65ET1-GE3

SIHD6N65ET1-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix
3,705 -

RFQ

SIHD6N65ET1-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD6N65ET4-GE3

SIHD6N65ET4-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix
2,651 -

RFQ

SIHD6N65ET4-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD6N65ET5-GE3

SIHD6N65ET5-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix
2,137 -

RFQ

SIHD6N65ET5-GE3

Ficha técnica

Tape & Reel (TR) E Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4151DY-T1-GE3

SI4151DY-T1-GE3

P-CHANNEL 30-V (D-S) MOSFET SO-8

Vishay Siliconix
2,547 -

RFQ

SI4151DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active P-Channel MOSFET (Metal Oxide) 30 V 15.2A (Ta), 20.5A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.5V @ 250µA 87 nC @ 10 V ±25V 3250 pF @ 15 V - 3.1W (Ta), 5.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR420TRRPBF

IRFR420TRRPBF

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
3,826 -

RFQ

IRFR420TRRPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR420PBF-BE3

IRFR420PBF-BE3

N-CHANNEL 500V

Vishay Siliconix
2,324 -

RFQ

IRFR420PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7742DP-T1-GE3

SI7742DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix
3,750 -

RFQ

SI7742DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SkyFET®, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V 2.7V @ 250µA 115 nC @ 10 V ±20V 5300 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR402DP-T1-GE3

SIR402DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix
3,892 -

RFQ

SIR402DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V 2.2V @ 250µA 42 nC @ 10 V ±20V 1700 pF @ 15 V - 4.2W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA12N50E-E3

SIHA12N50E-E3

MOSFET N-CH 500V 10.5A TO220

Vishay Siliconix
2,209 -

RFQ

SIHA12N50E-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQD50N04-5M6_GE3

SQD50N04-5M6_GE3

MOSFET N-CH 40V 50A TO252AA

Vishay Siliconix
3,438 -

RFQ

SQD50N04-5M6_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 5.6mOhm @ 20A, 10V 3.5V @ 250µA 85 nC @ 10 V ±20V 4000 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR638DP-T1-RE3

SIR638DP-T1-RE3

MOSFET N-CH 40V 100A PPAK SO-8

Vishay Siliconix
2,299 -

RFQ

Tape & Reel (TR) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V 2.3V @ 250µA 204 nC @ 10 V +20V, -16V 10500 pF @ 20 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR690DP-T1-RE3

SIR690DP-T1-RE3

MOSFET N-CH 200V 34.4A PPAK SO-8

Vishay Siliconix
2,331 -

RFQ

Tape & Reel (TR) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 34.4A (Tc) 7.5V, 10V 35mOhm @ 20A, 10V 4V @ 250µA 48 nC @ 10 V ±20V 1935 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQ4080EY-T1_BE3

SQ4080EY-T1_BE3

N-CHANNEL 150-V (D-S) 175C MOSFE

Vishay Siliconix
2,500 -

RFQ

SQ4080EY-T1_BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 85mOhm @ 10A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 1590 pF @ 75 V - 7.1W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9210PBF-BE3

IRFR9210PBF-BE3

P-CHANNEL 200V

Vishay Siliconix
2,458 -

RFQ

IRFR9210PBF-BE3

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR024TRLPBF

IRLR024TRLPBF

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
2,452 -

RFQ

IRLR024TRLPBF

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRC16DP-T1-RE3

SIRC16DP-T1-RE3

N-CHANNEL 25-V (D-S) MOSFET W/SC

Vishay Siliconix
5,900 -

RFQ

SIRC16DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 25 V 57A (Ta), 60A (Tc) 4.5V, 10V 0.96mOhm @ 15A, 10V 2.4V @ 250µA 105 nC @ 10 V +20V, -16V 5150 pF @ 10 V Schottky Diode (Body) 5W (Ta), 54.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR110TRLPBF-BE3

IRFR110TRLPBF-BE3

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
3,000 -

RFQ

IRFR110TRLPBF-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) - 540mOhm @ 2.6A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHF840LCS-GE3

SIHF840LCS-GE3

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,915 -

RFQ

SIHF840LCS-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHU6N65E-GE3

SIHU6N65E-GE3

MOSFET N-CH 650V 7A IPAK

Vishay Siliconix
2,678 -

RFQ

SIHU6N65E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 600mOhm @ 3A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 820 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
SISH116DN-T1-GE3

SISH116DN-T1-GE3

MOSFET N-CH 40V 10.5A PPAK

Vishay Siliconix
3,341 -

RFQ

SISH116DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 10.5A (Ta) 4.5V, 10V 7.8mOhm @ 16.4A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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