Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIHP15N60E-GE3

SIHP15N60E-GE3

MOSFET N-CH 600V 15A TO220AB

Vishay Siliconix
682 -

RFQ

SIHP15N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB186N60EF-GE3

SIHB186N60EF-GE3

MOSFET N-CH 600V 8.4A D2PAK

Vishay Siliconix
3,000 -

RFQ

SIHB186N60EF-GE3

Ficha técnica

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 8.4A (Tc) 10V 193mOhm @ 9.5A, 10V 5V @ 250µA 32 nC @ 10 V ±30V 1081 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI840GLCPBF

IRFI840GLCPBF

MOSFET N-CH 500V 4.5A TO220-3

Vishay Siliconix
990 -

RFQ

IRFI840GLCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 850mOhm @ 2.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUP40010EL-GE3

SUP40010EL-GE3

MOSFET N-CH 40V 120A TO220AB

Vishay Siliconix
3,355 -

RFQ

SUP40010EL-GE3

Ficha técnica

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.8mOhm @ 30A, 10V 2.5V @ 250µA 230 nC @ 10 V ±20V 11155 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ48GPBF

IRFIZ48GPBF

MOSFET N-CH 60V 37A TO220-3

Vishay Siliconix
691 -

RFQ

IRFIZ48GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 10V 18mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBC30APBF

IRFBC30APBF

MOSFET N-CH 600V 3.6A TO220AB

Vishay Siliconix
1,761 -

RFQ

IRFBC30APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ48SPBF

IRFZ48SPBF

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
567 -

RFQ

IRFZ48SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 18mOhm @ 43A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 3.7W (Ta), 190W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHF15N60E-GE3

SIHF15N60E-GE3

MOSFET N-CH 600V 15A TO220

Vishay Siliconix
818 -

RFQ

SIHF15N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 78 nC @ 10 V ±30V 1350 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB7N50APBF

IRFIB7N50APBF

MOSFET N-CH 500V 6.6A TO220-3

Vishay Siliconix
953 -

RFQ

IRFIB7N50APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 6.6A (Tc) 10V 520mOhm @ 4A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI5404BDC-T1-E3

SI5404BDC-T1-E3

MOSFET N-CH 20V 5.4A 1206-8

Vishay Siliconix
3,905 -

RFQ

SI5404BDC-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5.4A (Ta) 2.5V, 4.5V 28mOhm @ 5.4A, 4.5V 1.5V @ 250µA 11 nC @ 4.5 V ±12V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7792DP-T1-GE3

SI7792DP-T1-GE3

MOSFET N-CH 30V 40.6A/60A PPAK

Vishay Siliconix
2,447 -

RFQ

SI7792DP-T1-GE3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Gen III Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40.6A (Ta), 60A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V 2.5V @ 250µA 135 nC @ 10 V ±20V 4735 pF @ 15 V Schottky Diode (Body) 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7794DP-T1-GE3

SI7794DP-T1-GE3

MOSFET N-CH 30V 28.6A/60A PPAK

Vishay Siliconix
3,036 -

RFQ

SI7794DP-T1-GE3

Ficha técnica

Tape & Reel (TR) SkyFET®, TrenchFET® Gen III Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28.6A (Ta), 60A (Tc) 4.5V, 10V 3.4mOhm @ 20A, 10V 2.5V @ 250µA 72 nC @ 10 V ±20V 2520 pF @ 15 V Schottky Diode (Body) 5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB22N60S-GE3

SIHB22N60S-GE3

MOSFET N-CH 600V 22A D2PAK

Vishay Siliconix
3,837 -

RFQ

SIHB22N60S-GE3

Ficha técnica

Tape & Reel (TR) S Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 190mOhm @ 11A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2810 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA22N60AEL-GE3

SIHA22N60AEL-GE3

MOSFET N-CH 600V 21A TO220

Vishay Siliconix
3,819 -

RFQ

SIHA22N60AEL-GE3

Ficha técnica

Bulk EL Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 82 nC @ 10 V ±30V 1757 pF @ 100 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJ474EP-T2_GE3

SQJ474EP-T2_GE3

MOSFET N-CH 100V 26A PPAK SO-8

Vishay Siliconix
3,468 -

RFQ

SQJ474EP-T2_GE3

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tc) 4.5V, 10V 30mOhm @ 10A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 1100 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHP25N50E-GE3

SIHP25N50E-GE3

MOSFET N-CH 500V 26A TO220AB

Vishay Siliconix
104 -

RFQ

SIHP25N50E-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL640SPBF

IRL640SPBF

MOSFET N-CH 200V 17A D2PAK

Vishay Siliconix
3,413 -

RFQ

IRL640SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 17A (Tc) 4V, 5V 180mOhm @ 10A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 1800 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI9640GPBF

IRFI9640GPBF

MOSFET P-CH 200V 6.1A TO220-3

Vishay Siliconix
569 -

RFQ

IRFI9640GPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 6.1A (Tc) 10V 500mOhm @ 3.7A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SUM90N03-2M2P-E3

SUM90N03-2M2P-E3

MOSFET N-CH 30V 90A TO263

Vishay Siliconix
2,950 -

RFQ

SUM90N03-2M2P-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 2.2mOhm @ 32A, 10V 2.5V @ 250µA 257 nC @ 10 V ±20V 12065 pF @ 15 V - 3.75W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI640GPBF

IRLI640GPBF

MOSFET N-CH 200V 9.9A TO220-3

Vishay Siliconix
912 -

RFQ

IRLI640GPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9.9A (Tc) 4V, 5V 180mOhm @ 5.9A, 5V 2V @ 250µA 66 nC @ 10 V ±10V 1800 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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