Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SQ3418AEEV-T1_GE3

SQ3418AEEV-T1_GE3

MOSFET N-CHANNEL 30V 7.8A 6TSOP

Vishay Siliconix
2,094 -

RFQ

SQ3418AEEV-T1_GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 8A 4.5V, 10V 35mOhm @ 6A, 10V 2.5V @ 250µA 3.5 nC @ 4.5 V ±20V 528 pF @ 25 V - 5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIRC06DP-T1-GE3

SIRC06DP-T1-GE3

MOSFET N-CH 30V 32A/60A PPAK SO8

Vishay Siliconix
2,796 -

RFQ

SIRC06DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 60A (Tc) 4.5V, 10V 2.7mOhm @ 15A, 10V 2.1V @ 250µA 58 nC @ 10 V +20V, -16V 2455 pF @ 15 V Schottky Diode (Body) 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB21N60EF-GE3

SIHB21N60EF-GE3

MOSFET N-CH 600V 21A TO263AB

Vishay Siliconix
366 -

RFQ

SIHB21N60EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 176mOhm @ 11A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2030 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFP150PBF

IRFP150PBF

MOSFET N-CH 100V 41A TO247-3

Vishay Siliconix
680 -

RFQ

IRFP150PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 41A (Tc) 10V 55mOhm @ 25A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 2800 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFPE40PBF

IRFPE40PBF

MOSFET N-CH 800V 5.4A TO247-3

Vishay Siliconix
441 -

RFQ

IRFPE40PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 2Ohm @ 3.2A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB5N65APBF

IRFIB5N65APBF

MOSFET N-CH 650V 5.1A TO220-3

Vishay Siliconix
969 -

RFQ

IRFIB5N65APBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 5.1A (Tc) 10V 930mOhm @ 3.1A, 10V 4V @ 250µA 48 nC @ 10 V ±30V 1417 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIB417EDK-T1-GE3

SIB417EDK-T1-GE3

MOSFET P-CH 8V 9A PPAK SC75-6

Vishay Siliconix
2,171 -

RFQ

SIB417EDK-T1-GE3

Ficha técnica

Tape & Reel (TR) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 8 V 9A (Tc) 1.2V, 4.5V 58mOhm @ 5.8A, 4.5V 1V @ 250µA 12 nC @ 5 V ±5V 565 pF @ 4 V - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SISC06DN-T1-GE3

SISC06DN-T1-GE3

MOSFET N-CH 30V 27.6A/40A PPAK

Vishay Siliconix
2,150 -

RFQ

SISC06DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 27.6A (Ta), 40A (Tc) 4.5V, 10V 2.7mOhm @ 15A, 10V 2.1V @ 250µA 58 nC @ 10 V +20V, -16V 2455 pF @ 15 V - 3.7W (Ta), 46.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHFU9220-GE3

SIHFU9220-GE3

MOSFET P-CH 200V 3.6A TO251AA

Vishay Siliconix
2,850 -

RFQ

SIHFU9220-GE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.5Ohm @ 2.2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 3400 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40LCPBF

IRFBC40LCPBF

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
105 -

RFQ

IRFBC40LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHA125N60EF-GE3

SIHA125N60EF-GE3

MOSFET N-CH 600V 11A TO220

Vishay Siliconix
1,000 -

RFQ

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHB100N60E-GE3

SIHB100N60E-GE3

MOSFET N-CH 600V 30A D2PAK

Vishay Siliconix
335 -

RFQ

SIHB100N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 100mOhm @ 13A, 10V 5V @ 250µA 50 nC @ 10 V ±30V 1851 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHB21N65EF-GE3

SIHB21N65EF-GE3

MOSFET N-CH 650V 21A D2PAK

Vishay Siliconix
443 -

RFQ

SIHB21N65EF-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 106 nC @ 10 V ±30V 2322 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHP120N60E-GE3

SIHP120N60E-GE3

MOSFET N-CH 600V 25A TO220AB

Vishay Siliconix
616 -

RFQ

SIHP120N60E-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 120mOhm @ 12A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 1562 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP340PBF

IRFP340PBF

MOSFET N-CH 400V 11A TO247-3

Vishay Siliconix
505 -

RFQ

IRFP340PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP244PBF

IRFP244PBF

MOSFET N-CH 250V 15A TO247-3

Vishay Siliconix
1,470 -

RFQ

IRFP244PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 280mOhm @ 9A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP064PBF

IRFP064PBF

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix
475 -

RFQ

IRFP064PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 9mOhm @ 78A, 10V 4V @ 250µA 190 nC @ 10 V ±20V 7400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIJA72ADP-T1-GE3

SIJA72ADP-T1-GE3

MOSFET N-CH 40V 27.9A/96A PPAK

Vishay Siliconix
3,319 -

RFQ

SIJA72ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 27.9A (Ta), 96A (Tc) 4.5V, 10V 3.42mOhm @ 10A, 10V 2.4V @ 250µA 50 nC @ 10 V +20V, -16V 2530 pF @ 20 V - 4.8W (Ta), 56.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFPG40PBF

IRFPG40PBF

MOSFET N-CH 1000V 4.3A TO247-3

Vishay Siliconix
103 -

RFQ

IRFPG40PBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 4.3A (Tc) 10V 3.5Ohm @ 2.6A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 1600 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP360LCPBF

IRFP360LCPBF

MOSFET N-CH 400V 23A TO247-3

Vishay Siliconix
300 -

RFQ

IRFP360LCPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 23A (Tc) 10V 200mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 3400 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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