Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SISA10DN-T1-GE3

SISA10DN-T1-GE3

MOSFET N-CH 30V 30A PPAK1212-8

Vishay Siliconix
5,940 -

RFQ

SISA10DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 3.7mOhm @ 10A, 10V 2.2V @ 250µA 51 nC @ 10 V +20V, -16V 2425 pF @ 15 V - 3.6W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3469DV-T1-GE3

SI3469DV-T1-GE3

MOSFET P-CH 20V 5A 6TSOP

Vishay Siliconix
3,000 -

RFQ

SI3469DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 4.5V, 10V 30mOhm @ 6.7A, 10V 3V @ 250µA 30 nC @ 10 V ±20V - - 1.14W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3438DV-T1-GE3

SI3438DV-T1-GE3

MOSFET N-CH 40V 7.4A 6TSOP

Vishay Siliconix
13,598 -

RFQ

SI3438DV-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 7.4A (Tc) 4.5V, 10V 35.5mOhm @ 5A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 640 pF @ 20 V - 2W (Ta), 3.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7629DN-T1-GE3

SI7629DN-T1-GE3

MOSFET P-CH 20V 35A PPAK1212-8

Vishay Siliconix
17,634 -

RFQ

SI7629DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 2.5V, 10V 4.6mOhm @ 20A, 10V 1.5V @ 250µA 177 nC @ 10 V ±12V 5790 pF @ 10 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9530SPBF

IRF9530SPBF

MOSFET P-CH 100V 12A D2PAK

Vishay Siliconix
2,560 -

RFQ

IRF9530SPBF

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS444DN-T1-GE3

SIS444DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix
3,796 -

RFQ

SIS444DN-T1-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 3.3mOhm @ 10A, 10V 2.3V @ 250µA 102 nC @ 10 V ±20V 3065 pF @ 15 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR474DP-T1-RE3

SIR474DP-T1-RE3

MOSFET N-CH 30V 20A PPAK SO-8

Vishay Siliconix
2,701 -

RFQ

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.2V @ 250µA 27 nC @ 10 V ±20V 985 pF @ 15 V - 29.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHU3N50D-GE3

SIHU3N50D-GE3

MOSFET N-CH 500V 3A TO251

Vishay Siliconix
3,643 -

RFQ

SIHU3N50D-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 2.5A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 175 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ24SPBF

IRFZ24SPBF

MOSFET N-CH 60V 17A TO263

Vishay Siliconix
1,114 -

RFQ

IRFZ24SPBF

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR210TRPBF

IRFR210TRPBF

MOSFET N-CH 200V 2.6A DPAK

Vishay Siliconix
6,000 -

RFQ

IRFR210TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Tc) 10V 1.5Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR698DP-T1-GE3

SIR698DP-T1-GE3

MOSFET N-CH 100V 7.5A PPAK SO-8

Vishay Siliconix
11,963 -

RFQ

SIR698DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 7.5A (Tc) 6V, 10V 195mOhm @ 2.5A, 10V 3.5V @ 250µA 8 nC @ 10 V ±20V 210 pF @ 50 V - 3.7W (Ta), 23W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4894BDY-T1-E3

SI4894BDY-T1-E3

MOSFET N-CH 30V 8.9A 8SO

Vishay Siliconix
9,032 -

RFQ

SI4894BDY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 8.9A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1580 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL214TRPBF-BE3

IRFL214TRPBF-BE3

MOSFET N-CH 250V 790MA SOT223

Vishay Siliconix
2,684 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 250 V 790mA (Tc) 10V 2Ohm @ 470mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIB437EDKT-T1-GE3

SIB437EDKT-T1-GE3

MOSFET P-CH 8V 9A PPAK TSC75-6

Vishay Siliconix
2,944 -

RFQ

SIB437EDKT-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 8 V 9A (Tc) 1.2V, 4.5V 34mOhm @ 3A, 4.5V 700mV @ 250µA 16 nC @ 4.5 V ±5V - - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR798DP-T1-GE3

SIR798DP-T1-GE3

MOSFET N-CH 30V 60A PPAK SO-8

Vishay Siliconix
2,014 -

RFQ

SIR798DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Tc) 4.5V, 10V 2.05Ohm @ 20A, 10V 2.5V @ 250µA 130 nC @ 10 V ±20V 5050 pF @ 15 V Schottky Diode (Body) 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR864DP-T1-GE3

SIR864DP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
3,236 -

RFQ

SIR864DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 3.6mOhm @ 15A, 10V 2.4V @ 250µA 65 nC @ 10 V ±20V 2460 pF @ 15 V - 5W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHU3N50DA-GE3

SIHU3N50DA-GE3

MOSFET N-CHANNEL 500V 3A IPAK

Vishay Siliconix
3,568 -

RFQ

SIHU3N50DA-GE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 1.5A, 10V 4.5V @ 250µA 12 nC @ 10 V ±30V 177 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHD3N50D-E3

SIHD3N50D-E3

MOSFET N-CH 500V 3A DPAK

Vishay Siliconix
3,669 -

RFQ

SIHD3N50D-E3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 2.5A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 175 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD3N50DT4-GE3

SIHD3N50DT4-GE3

MOSFET N-CH 500V 3A DPAK

Vishay Siliconix
2,096 -

RFQ

SIHD3N50DT4-GE3

Ficha técnica

Tube D Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 1.5A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 175 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHD3N50DT5-GE3

SIHD3N50DT5-GE3

MOSFET N-CH 500V 3A DPAK

Vishay Siliconix
3,470 -

RFQ

SIHD3N50DT5-GE3

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 3A (Tc) 10V 3.2Ohm @ 1.5A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 175 pF @ 100 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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